Ultrathin van der Waals ferroelectric oxides for scalable low-power memory

Xiaokun Qin; Bowen Zhong; Zheng Lou; Lili Wang

doi:10.1088/1674-4926/26020015

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Ultrathin van der Waals ferroelectric oxides for scalable low-power memory

Xiaokun Qin^{1, 2}, Bowen Zhong^{1, 2}, Zheng Lou^{1, 2} and Lili Wang^{1, 2,}

+ Author Affiliations

Corresponding author: Lili Wang, liliwang@semi.ac.cn

DOI: 10.1088/1674-4926/26020015CSTR: 32376.14.1674-4926.26020015

References

[1]	Zhou Z P, Li L Q, Feng Y, et al. Advancing the frontiers of HfO₂-based ferroelectric memories: Innovative concepts from materials to applications. Adv Mater, 2025, 37(50): e09525 doi: 10.1002/adma.202509525
[2]	Wang Y, Tao L, Guzman R, et al. A stable rhombohedral phase in ferroelectric Hf(Zr)_1+xO₂capacitor with ultralow coercive field. Science, 2023, 381(6657): 558 doi: 10.1126/science.adf6137
[3]	Naseer A, Chauhan Y S, Bhowmick S, et al. Two-dimensional ferroelectric materials and their applications. 2D Mater, 2026, 13(1): 012004 doi: 10.1088/2053-1583/ae28e0
[4]	Zhong B W, Qin X K, Xu H, et al. Monolithic cell-on-memristor architecture enables wafer-scale integration of oscillatory chemoreceptors for bio-realistic gustatory chips. Nat Mater, 2026, 25(2): 275 doi: 10.1038/s41563-025-02436-y
[5]	Kim Y H, Lee D, Huh W, et al. Gate stack engineering of two-dimensional transistors. Nat Electron, 2025, 8(9): 770 doi: 10.1038/s41928-025-01448-5
[6]	Yoo S J, Kim T J, Nam S G, et al. Ferroelectric transistors for low-power NAND flash memory. Nature, 2025, 648: 320 doi: 10.1038/s41586-025-09793-3
[7]	Wu Q C, Li Z R, Han B C, et al. Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide. Science, 2026, 391: eadz1655 doi: 10.1126/science.adz1655
[8]	Kim K H, Oh S, Fiagbenu M M A, et al. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. Nat Nanotechnol, 2023, 18: 1044 doi: 10.1038/s41565-023-01399-y

Fig. 1. (Color online) Wafer-scale van der Waals ferroelectric devices. (a) Wafer-scale van der Waals ferroelectric-semiconductor heterostructure. (b) Atomic-resolution imaging of polarization switching in monolayer ferroelectric oxide. (c) Written ferroelectric domain patterns in monolayer films. (d) Wafer-scale FeFET arrays based on the van der Waals heterostructure. (e) Representative low-voltage transfer characteristics of FeFETs. (f) Statistical uniformity of FeFET performance across the wafer. (g) Polarization-state-dependent modulation of channel conductance. (h) Multilevel programmability enabled by partial polarization switching. (i) Stable time-domain switching of programmable FeFETs under pulsed operation^[7].

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[1]	Zhou Z P, Li L Q, Feng Y, et al. Advancing the frontiers of HfO₂-based ferroelectric memories: Innovative concepts from materials to applications. Adv Mater, 2025, 37(50): e09525 doi: 10.1002/adma.202509525
[2]	Wang Y, Tao L, Guzman R, et al. A stable rhombohedral phase in ferroelectric Hf(Zr)_1+xO₂capacitor with ultralow coercive field. Science, 2023, 381(6657): 558 doi: 10.1126/science.adf6137
[3]	Naseer A, Chauhan Y S, Bhowmick S, et al. Two-dimensional ferroelectric materials and their applications. 2D Mater, 2026, 13(1): 012004 doi: 10.1088/2053-1583/ae28e0
[4]	Zhong B W, Qin X K, Xu H, et al. Monolithic cell-on-memristor architecture enables wafer-scale integration of oscillatory chemoreceptors for bio-realistic gustatory chips. Nat Mater, 2026, 25(2): 275 doi: 10.1038/s41563-025-02436-y
[5]	Kim Y H, Lee D, Huh W, et al. Gate stack engineering of two-dimensional transistors. Nat Electron, 2025, 8(9): 770 doi: 10.1038/s41928-025-01448-5
[6]	Yoo S J, Kim T J, Nam S G, et al. Ferroelectric transistors for low-power NAND flash memory. Nature, 2025, 648: 320 doi: 10.1038/s41586-025-09793-3
[7]	Wu Q C, Li Z R, Han B C, et al. Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide. Science, 2026, 391: eadz1655 doi: 10.1126/science.adz1655
[8]	Kim K H, Oh S, Fiagbenu M M A, et al. Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors. Nat Nanotechnol, 2023, 18: 1044 doi: 10.1038/s41565-023-01399-y