Zepeng Li is a graduate student at the School of Information Science and Engineering, University of Jinan. His main research focuses on the fabrication and optoelectronic properties of memristive devices and their applications in neuromorphic computing.
Wenjing Yue received her Ph.D. from Kwangwoon University in Korea in 2017. She joined the University of Jinan as an associate professor in 2017. Her main research directions are micro-nano photonic device design and optical information encryption.
Yang Li has been a professor at Shandong University, China, since 2022. He received his PhD degree in Electronic Engineering from Kwangwoon University, Korea, in 2015. His research interests include flexible sensing materials and devices, memristive materials and devices, neuromorphic computing applications, RF passive device design, and advanced semiconductor fabrication. He has published over 150 peer-reviewed journal and conference papers in the relevant fields.
Fig. 1.
(Color online) Concept, structure, and quantification of 1D charged domain walls (CDWs) in ferroelectric ZrO2. (a) Schematic illustration of dimensional confinement, showing the transition from 2D DWs in conventional 3D systems to 1D structures in fluorite ferroelectrics. (b) Atomic-resolution MEP image and oxygen displacement mapping of ZrO2, where the color scale represents the normalized displacement with respect to the standard Pca21 structure of ZrO2. (c) Atomic model depicting a 1D charged domain wall confined strictly within the polar layers. (d) (I) Projected MEP phase image showing “head-to-head” (H-H) CDWs. (II) Magnified view and atomic model of a single H-H CDW. (III) Quantitative analysis of polar oxygen (OP) displacement in each subcell from (d-II), verifying the single-subcell thickness characteristic of the H-H wall. (e) (I) Projected MEP phase image showing “tail-to-tail” (T-T) CDWs. (II) Magnified view and atomic model of a T-T CDW. (III) Quantitative analysis of OP displacement in each subcell from (e-II), verifying the single-subcell thickness characteristic of the T-T wall[15].
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