Jiajia Chen received her Ph. D. degree from the Zhejiang University, China, in 2019. She is currently an Associate professor with the Hangzhou Institute of Technology, Xidian University, China. Her current research interests include advanced CMOS and emerging nonvolatile memory technologies, particularly ferroelectric devices, for computing-in-memory applications.
Haoji Qian received his doctoral degree from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, in 2022. He is currently a postdoctoral researcher at Xidian University. His research interests include ferroelectric materials and devices.
Xiaoxi Li obtained her undergraduate degree from the Department of Microelectronics at Xidian University and received her Ph.D. in Microelectronics from Fudan University. After completing her Ph.D., she continued her research at Xidian University. Her research interests include novel ferroelectric devices and applications.
Chengji Jin received the Ph.D. degree from the University of Tokyo, Tokyo, Japan, in 2020. He is currently an Associate professor with the Hangzhou Institute of Technology, Xidian University, China. His current research interests include advanced CMOS technologies and emerging nonvolatile memory technologies.
Fig. 1.
(Color online) Schematic of (a) 2D and (b) 1D neutral and charged DWs in ferroelectric materials. (c) Atomic schematic of fluorite ferroelectrics (Hf/ZrO2) with defined 1D CDWs. Projected multislice electron ptychography (MEP) phase image containing (d) three H-H CDWs and (e) three T-T CDWs. (f to h) Atomic integrated differential phase contrast scanning transmission electron microscopy (iDPC-STEM) frames at three states during CDWs motion. The white dashed boxes mark the CDW positions and the arrows indicate the directions of the CDW motion. (i to k) Atomic models and polarization mappings corresponding to (f) to (h)[4].
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