Yimeng Sang is a postdoctoral researcher at the School of Integrated Circuits, Nanjing University. She received her doctoral degree from Nanjing University in 2024. Her research mainly focuses on group-III nitride optoelectronic materials and device integration. She has published more than ten papers as the first author or co-first author in international journals and conferences including Science Advances, IEEE IEDM, Applied Physics Letters and IEEE Electron Device Letters.
Zhe Zhuang is an Associate Professor at the School of Integrated Circuits, Nanjing University. He earned his bachelor’s and doctoral degrees from Nanjing University. He once conducted visiting research at the National Centre for III-V Semiconductors, the University of Sheffield, UK, and pursued postdoctoral research at King Abdullah University of Science and Technology (KAUST), Saudi Arabia. His main research interests lie in the epitaxial growth of group-III nitrides and optoelectronic devices.
Bin Liu is a professor at the School of Electronic Science and Engineering, Nanjing University. He received his doctoral degree from Nanjing University in 2008. His research focuses on group-III nitride semiconductor materials and devices. In recent years, he has mainly dedicated himself to the epitaxial growth, device fabrication and mechanism research of GaN-based Micro-LEDs.
Fig. 1.
(Color online) (a) Schematic of fabricated GaN pyramid arrays on polycrystalline Ti. Both the epitaxial GaN layer and Ti buffer layer presented c-axis preferred orientation in the out-of-plane (z) direction and random orientations in the in-plane (x or y) crystallographic directions[3]. (b) Schematic illustration and corresponding microscopic and scanning electron microscopy (SEM) images of fabrication processes for epitaxial GaN thin films[6]. (c) Schematic and X-ray rocking diffraction (XRD) azimuthal off-axis φ scan on GaN (103) of GaN grown on an amorphous SiO2/Si substrate, polycrystalline diamond substrate, and Si(100) substrate with a composed buffer of graphene/PVD AlN[10]. (d) Schematic illustration and corresponding SEM images of GaN films with transferable chemical vapor deposition (CVD)-grown h-BN buffer layer[7]. (e) Schematic and high resolution transmission electron microscopy (HRTEM) image of AlN/MoS2/Si(100)[8]. (f) Distributions of charge density difference in GaN/ Graphene heterostructure and GaN/ WS2 heterostructure[9]. (g) Schematic diagram of the nucleation and epitaxy of Ⅲ-nitrides on an amorphous SiO2 with MoS2 and MoN buffers. The epitaxial GaN flim exhibits a highly smooth surface with a hexagonal lattice feature and high crystal quality[11].
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