Performance enhancement of GeS/MoS<sub>2</sub> van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection

Xiaoxiang Wu; Xinyu Zhang; Yi Zhang; Peng Li; Yu Wang; Yali Liu; Mengge Li; Yuyin Li; Zhanjie Qiu; Zhengyang Zhanyi; Songlin Zhou; Zhongliang Wang; Yewu Wang

doi:10.1088/1674-4926/26030026

J. Semicond. > Just Accepted

ARTICLES

Performance enhancement of GeS/MoS₂ van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection

Xiaoxiang Wu¹, Xinyu Zhang¹, Yi Zhang¹, Peng Li¹, Yu Wang¹, Yali Liu³, Mengge Li⁷, Yuyin Li¹, Zhanjie Qiu⁴, Zhengyang Zhanyi⁴, Songlin Zhou^{1, 3}, Zhongliang Wang^{1, 6,} and Yewu Wang^{4, 5,}

+ Author Affiliations

1. School of Electrical and Information Engineering, Tongling University, Tongling 244000, P. R. China
2. Institute of Energy, Hefei Comprehensive National Science Center(Anhui Energy Laboratory), Hefei 230000, P. R. China
3. School of Physics and Technology, University of Jinan, Jinan 250000, P. R. China
4. School of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, P. R. China
5. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
6. Engineering Technology Research Center of Optoelectronic Technology Appliance, Anhui Province, Tongling 246600, P. R. China
7. School of microelectronics & data science, Anhui University of Technology, Maanshan, 243032, P. R. China

Author Bio:

Xiaoxiang Wu received his doctoral degree from the School of Physics, Zhejiang University, in 2023. He is currently a Lecturer at the School of Electrical and Information Engineering, Tongling University. His research interests mainly focus on the single-crystal growth of two-dimensional semiconductor materials and the investigation of their optoelectronic device performance.

Zhongliang Wang received his doctoral degree in Information and Communication Engineering from the School of Electronics and Information, Northwestern Polytechnical University. He is currently a Professor at the School of Electrical and Information Engineering, Tongling University. His research interests involve computational imaging and hyperspectral remote sensing image processing.

Corresponding author: Zhongliang Wang, guangdianzi_wzl@163.com; Yewu Wang, yewuwang@zju.edu.cn

DOI: 10.1088/1674-4926/26030026CSTR: 32376.14.1674-4926.26030026

Abstract: van der Waals (vdW) heterojunctions possess great potential for next-generation high-performance optoelectronic devices owing to their facile fabrication and high-quality interfaces. In this study, GeS/MoS₂ vdW heterojunction photodetectors were fabricated and investigated. After suppressing electron recombination by eliminating the non-heterojunction regions on the GeS side, the devices exhibited pronounced rectifying behavior. A large rectification ratio of 2.4×10³ and an ideality factor of 2.3 were achieved. Furthermore, the devices demonstrated photovoltaic-type photodetection performance, including a responsivity of 10.6 mA/W, fast rise/decay time of 83 ms/98 ms, respectively. Notably, the responsivity was further improved to 291.5 mA/W under modulation of V_g. These results provide valuable insights into the optimization and development of high-performance optoelectronic devices based on two-dimensional materials and vdW heterojunctions.

Keywords: two-dimensional materials, MoS₂, GeS, van der Waals heterojunction, photodetector.

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Fig. 1. (Color online) Characterization of the GeS single crystal. (a) XRD pattern of the GeS single crystal. The inset is the optical image of the GeS single crystal. (b) Raman spectrum of a multilayer GeS nanoflake.

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Fig. 2. (Color online) The electrical properties of the GeS/MoS₂ heterojunction. (a) The optical microscope image, (b) the output curve, (c) the transfer curve of the GeS/MoS₂ vdW heterojunction device with structure-1.

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Fig. 3. (Color online) Optical microscope image and the electrical performance of the GeS/MoS₂ vdW heterojunction device. (a) The optical microscope image of the GeS/MoS₂ vdW heterojunction device No.1 with structure-2. The scale bar represents 10 μm. (b) The output curve of the device. The ideality factor is 2.3. (c) The output curves of the device under gate voltage from -40 to 40 V. (d) The transfer curve of the device at a voltage of 1 V.

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Fig. 4. (Color online) The performance of a typical GeS/MoS₂ vdW heterojunction photodetector. (a) The optical microscope image of the device No.2 with structure-2. The scale bar represents 15 μm. (b) The output curves with and without the laser irradiation of 532 nm laser. Time-resolved photodetection of the photodetector under the switch on/off irradiation of 532 nm laser with (c) 0 V and (d) –1 V. (e) Linear dependence of the photocurrent on the laser power intensity of 532 nm. The orange and violet line represents the fitting curve. The response time and decay time of the photodetector with (f) 0 V and (g) –1 V. Energy band diagram of GeS/MoS₂ vdW heterojunction under (h) dark and (i) laser irradiation.

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Fig. 5. (Color online) The (a) responsivity, (b) external quantum efficiency, (c) specific detectivity of the photodetector with varying laser power intensities at the voltage of 0 V and –1 V.

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Fig. 6. (Color online) The performance of the photodetector at the voltage of –1 V under modulation of gate voltage. (a) The transfer curves of the photodetector at the voltage of –1 V with and without laser irradiation. (b) Time-resolved photodetection of the photodetector under the switch on/off irradiation of 532 nm laser at the voltage of −1 V with gate voltage of 40 V. (c) Linear dependence of the photocurrent on the laser power intensity of 532 nm at the voltage of −1 V with gate voltage of 40 V. The orange line represents the fitting curve. (d) The responsivity and external quantum efficiency of the photodetector with varying laser power intensities. (e) The specific detectivity of the photodetector with varying laser power intensities. (f) The response time and decay time of the photodetector.

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Table 1. Performance comparison between our GeS/MoS₂ vdW heterojunction-based photodetectors and other devices in literatures.

Heterojunctions	Rectification ratio	Ideality factor	External bias (V)	R（mA/W）	rise/decay time	Refs
FePS₃/WS₂	—	—	–2	32.5	220/160 ms	^[15]
FePS₃/MoSe₂	18	2.7	0	52	600/600 ms	^[14]
InSe/GeS	7	—	5	2.7×10⁵	—	^[35]
CdPSe₃/MoS₂	—	—	5	91.12	27/20 ms	^[53]
CdTe/MoS₂	46.3	—	0	270.3	44.8/134.2 μs.	^[54]
GeS/MoS₂	~10²	—	-2	21	—	^[37]
GeS/MoS₂	2.4×10³	2.3	0	10.6	83/98 ms	This work
GeS/MoS₂	2.4×10³	2.3	–1 (V_g = 40 V)	291.5	52.6/49.2 ms	This work

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[21]	Mohammadzadeh M R, Hasani A, Jaferzadeh K, et al. Unique photoactivated time-resolved response in 2D GeS for selective detection of volatile organic compounds. Adv Sci, 2023, 10(10): 2205458 doi: 10.1002/advs.202205458
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Received: 18 March 2026 Revised: 21 June 2026 Online: Accepted Manuscript: 07 August 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Xiaoxiang Wu, Xinyu Zhang, Yi Zhang, Peng Li, Yu Wang, Yali Liu, Mengge Li, Yuyin Li, Zhanjie Qiu, Zhengyang Zhanyi, Songlin Zhou, Zhongliang Wang, Yewu Wang. Performance enhancement of GeS/MoS2 van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26030026 ****X X Wu, X Y Zhang, Y Zhang, P Li, Y Wang, Y L Liu, M G Li, Y Y Li, Z J Qiu, Z Y Z yi, S L Zhou, Z L Wang, and Y W Wang, Performance enhancement of GeS/MoS2 van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26030026

Citation:

X X Wu, X Y Zhang, Y Zhang, P Li, Y Wang, Y L Liu, M G Li, Y Y Li, Z J Qiu, Z Y Z yi, S L Zhou, Z L Wang, and Y W Wang, Performance enhancement of GeS/MoS₂ van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26030026

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Performance enhancement of GeS/MoS₂ van der Waals heterojunction optoelectronic device with photovoltaic-type photodetection

DOI: 10.1088/1674-4926/26030026

CSTR: 32376.14.1674-4926.26030026

1.
School of Electrical and Information Engineering, Tongling University, Tongling 244000, P. R. China
2.
Institute of Energy, Hefei Comprehensive National Science Center(Anhui Energy Laboratory), Hefei 230000, P. R. China
3.
School of Physics and Technology, University of Jinan, Jinan 250000, P. R. China
4.
School of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, P. R. China
5.
Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
6.
Engineering Technology Research Center of Optoelectronic Technology Appliance, Anhui Province, Tongling 246600, P. R. China
7.
School of microelectronics & data science, Anhui University of Technology, Maanshan, 243032, P. R. China

More Information

Xiaoxiang Wu received his doctoral degree from the School of Physics, Zhejiang University, in 2023. He is currently a Lecturer at the School of Electrical and Information Engineering, Tongling University. His research interests mainly focus on the single-crystal growth of two-dimensional semiconductor materials and the investigation of their optoelectronic device performance
Zhongliang Wang received his doctoral degree in Information and Communication Engineering from the School of Electronics and Information, Northwestern Polytechnical University. He is currently a Professor at the School of Electrical and Information Engineering, Tongling University. His research interests involve computational imaging and hyperspectral remote sensing image processing
Corresponding author: guangdianzi_wzl@163.com; yewuwang@zju.edu.cn
Received Date: 2026-03-18
Revised Date: 2026-06-21

Available Online: 2026-08-07

Abstract

Abstract

van der Waals (vdW) heterojunctions possess great potential for next-generation high-performance optoelectronic devices owing to their facile fabrication and high-quality interfaces. In this study, GeS/MoS₂ vdW heterojunction photodetectors were fabricated and investigated. After suppressing electron recombination by eliminating the non-heterojunction regions on the GeS side, the devices exhibited pronounced rectifying behavior. A large rectification ratio of 2.4×10³ and an ideality factor of 2.3 were achieved. Furthermore, the devices demonstrated photovoltaic-type photodetection performance, including a responsivity of 10.6 mA/W, fast rise/decay time of 83 ms/98 ms, respectively. Notably, the responsivity was further improved to 291.5 mA/W under modulation of V_g. These results provide valuable insights into the optimization and development of high-performance optoelectronic devices based on two-dimensional materials and vdW heterojunctions.
- two-dimensional materials,
- MoS₂,
- GeS,
- van der Waals heterojunction,
- photodetector.

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