Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering

Ningyi Wang; Borui Zhang; Shujuan Liu; Qiang Zhao

doi:10.1088/1674-4926/26040038

J. Semicond. > Just Accepted

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Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering

Ningyi Wang¹, Borui Zhang¹, Shujuan Liu^1, and Qiang Zhao^{1, 2,}

+ Author Affiliations

1. State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
2. School of Physics and Optoelectronic Engineering & School of Chemistry and Materials Science, Institute of Flexible Brain–Computer Interface, Nanjing University of Information Science and Technology, Nanjing 210044, China

Author Bio:

Ningyi Wang received his B.S. degree in Electronic Science and Technology from Nanjing University of Posts and Telecommunications (NJUPT) in 2025. Currently, he is pursuing his Doctor degree under the supervision of Prof. Qiang Zhao at NJUPT. His recent research interests focused on flexible electronic materials and devices.

Borui Zhang received his B.S. degree in Optoelectronic Information Science and Engineering from Nanjing University of Posts and Telecommunications (NJUPT) in 2024. Currently, he is pursuing his Doctor degree under the supervision of Prof. Qiang Zhao at NJUPT. His recent research interests focused on flexible electronic materials and devices.

Shujuan Liu received her Ph.D. degree from Fudan University in 2006. She then joined the Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications. Since 2013, she has been a full professor. Her Her research area is organic and flexible electronics.

Qiang Zhao received his Ph.D. degree from Fudan University in 2007. He then became a postdoctoral fellow at Nagoya University of Japan. He joined Nanjing University of Posts and Telecommunications in 2008. He was promoted as a full professor in 2010. Now he is the vice president of Nanjing University of Information Science and Technology. His research area is organic and flexible electronics.

Corresponding author: Shujuan Liu, iamsjliu@njupt.edu.cn; Qiang Zhao, iamqzhao@njupt.edu.cn

DOI: 10.1088/1674-4926/26040038CSTR: 32376.14.1674-4926.26040038

References

[1]	Lin L H, Wang J, Hu H L, et al. Nanoscale transfer-printed full-colour ultrahigh-resolution quantum dot LEDs. Nature, 2026, 652(8109): 349 doi: 10.1038/s41586-026-10333-w
[2]	Yoo J, Lee K, Yang U J, et al. Highly efficient printed quantum dot light-emitting diodes through ultrahigh-definition double-layer transfer printing. Nat Photonics, 2024, 18(10): 1105 doi: 10.1038/s41566-024-01496-x
[3]	Meng T T, Zheng Y T, Zhao D L, et al. Ultrahigh-resolution quantum-dot light-emitting diodes. Nat Photonics, 2022, 16(4): 297 doi: 10.1038/s41566-022-00960-w
[4]	Xu F F, Cen X, Liu B, et al. High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots. J Semicond, 2020, 41(3): 032301 doi: 10.1088/1674-4926/41/3/032301
[5]	Li H J, Feng Y F, Zhu M Y, et al. Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display. Nat Nanotechnol, 2024, 19(5): 638 doi: 10.1038/s41565-024-01652-y
[6]	Luo C Z, Zheng Z S, Ding Y H, et al. High-resolution, highly transparent, and efficient quantum dot light-emitting diodes. Adv Mater, 2023, 35(33): 2303329 doi: 10.1002/adma.202303329
[7]	Choi M K, Yang J, Kang K, et al. Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing. Nat Commun, 2015, 6: 7149 doi: 10.1038/ncomms8149
[8]	Kim T H, Cho K S, Lee E K, et al. Full-colour quantum dot displays fabricated by transfer printing. Nat Photonics, 2011, 5(3): 176 doi: 10.1038/nphoton.2011.12
[9]	Li J M, Liu Z, Liu Z Q, et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 2016, 37(6): 061001 doi: 10.1088/1674-4926/37/6/061001
[10]	Yang P H, Zhang L, Kang D J, et al. High-resolution inkjet printing of quantum dot light-emitting microdiode arrays. Adv Opt Mater, 2020, 8(1): 1901429 doi: 10.1002/adom.201901429
[11]	Yang J, Hahm D, Kim K, et al. High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking. Nat Commun, 2020, 11: 2874 doi: 10.1038/s41467-020-16652-4
[12]	Nam T W, Kim M, Wang Y M, et al. Thermodynamic-driven polychromatic quantum dot patterning for light-emitting diodes beyond eye-limiting resolution. Nat Commun, 2020, 11: 3040 doi: 10.1038/s41467-020-16865-7
[13]	Zhao J Y, Chen L X, Li D Z, et al. Large-area patterning of full-color quantum dot arrays beyond 1000 pixels per inch by selective electrophoretic deposition. Nat Commun, 2021, 12: 4603 doi: 10.1038/s41467-021-24931-x
[14]	Empedocles S A, Bawendi M G. Quantum-confined stark effect in single CdSe nanocrystallite quantum dots. Science, 1997, 278(5346): 2114 doi: 10.1126/science.278.5346.2114

Fig. 1. (Color online) Dual-action force dynamics and dielectric engineering for ultrahigh-resolution QLEDs. (a) Schematic illustration of the nanoimprint–inverted transfer-printing (NP–TP) process. A hard silicon template defines microcavities in a polymer bilayer, which are selectively filled with quantum dots (QDs) and integrally transferred onto the target substrate, followed by removal of the sacrificial layer. (b) COMSOL simulation of the electric-field distribution inside 550-nm-diameter microholes under bias. Without dielectric matching, the field concentrates at the edges (hotspots). (c) After incorporating TiO₂ nanoparticles into the PVA blocking layer to match the QD dielectric constant, the field becomes homogeneous. (d) Peak external quantum efficiency (EQE) of red ultrahigh-resolution QLEDs (12700 PPI) under three configurations: without PVA barrier (very low EQE), with PVA barrier (moderate EQE), and with dielectric-optimized PVA/TiO₂ barrier (highest EQE, 26.1%)^[1]. Adapted from Lin et al., Nature 2026.

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[1]	Lin L H, Wang J, Hu H L, et al. Nanoscale transfer-printed full-colour ultrahigh-resolution quantum dot LEDs. Nature, 2026, 652(8109): 349 doi: 10.1038/s41586-026-10333-w
[2]	Yoo J, Lee K, Yang U J, et al. Highly efficient printed quantum dot light-emitting diodes through ultrahigh-definition double-layer transfer printing. Nat Photonics, 2024, 18(10): 1105 doi: 10.1038/s41566-024-01496-x
[3]	Meng T T, Zheng Y T, Zhao D L, et al. Ultrahigh-resolution quantum-dot light-emitting diodes. Nat Photonics, 2022, 16(4): 297 doi: 10.1038/s41566-022-00960-w
[4]	Xu F F, Cen X, Liu B, et al. High performance GaN-based hybrid white micro-LEDs integrated with quantum-dots. J Semicond, 2020, 41(3): 032301 doi: 10.1088/1674-4926/41/3/032301
[5]	Li H J, Feng Y F, Zhu M Y, et al. Nanosurface-reconstructed perovskite for highly efficient and stable active-matrix light-emitting diode display. Nat Nanotechnol, 2024, 19(5): 638 doi: 10.1038/s41565-024-01652-y
[6]	Luo C Z, Zheng Z S, Ding Y H, et al. High-resolution, highly transparent, and efficient quantum dot light-emitting diodes. Adv Mater, 2023, 35(33): 2303329 doi: 10.1002/adma.202303329
[7]	Choi M K, Yang J, Kang K, et al. Wearable red–green–blue quantum dot light-emitting diode array using high-resolution intaglio transfer printing. Nat Commun, 2015, 6: 7149 doi: 10.1038/ncomms8149
[8]	Kim T H, Cho K S, Lee E K, et al. Full-colour quantum dot displays fabricated by transfer printing. Nat Photonics, 2011, 5(3): 176 doi: 10.1038/nphoton.2011.12
[9]	Li J M, Liu Z, Liu Z Q, et al. Advances and prospects in nitrides based light-emitting-diodes. J Semicond, 2016, 37(6): 061001 doi: 10.1088/1674-4926/37/6/061001
[10]	Yang P H, Zhang L, Kang D J, et al. High-resolution inkjet printing of quantum dot light-emitting microdiode arrays. Adv Opt Mater, 2020, 8(1): 1901429 doi: 10.1002/adom.201901429
[11]	Yang J, Hahm D, Kim K, et al. High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking. Nat Commun, 2020, 11: 2874 doi: 10.1038/s41467-020-16652-4
[12]	Nam T W, Kim M, Wang Y M, et al. Thermodynamic-driven polychromatic quantum dot patterning for light-emitting diodes beyond eye-limiting resolution. Nat Commun, 2020, 11: 3040 doi: 10.1038/s41467-020-16865-7
[13]	Zhao J Y, Chen L X, Li D Z, et al. Large-area patterning of full-color quantum dot arrays beyond 1000 pixels per inch by selective electrophoretic deposition. Nat Commun, 2021, 12: 4603 doi: 10.1038/s41467-021-24931-x
[14]	Empedocles S A, Bawendi M G. Quantum-confined stark effect in single CdSe nanocrystallite quantum dots. Science, 1997, 278(5346): 2114 doi: 10.1126/science.278.5346.2114

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Received: 22 April 2026 Revised: Online: Accepted Manuscript: 18 May 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Ningyi Wang, Borui Zhang, Shujuan Liu, Qiang Zhao. Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26040038 ****N Y Wang, B R Zhang, S J Liu, and Q Zhao, Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040038

Citation:

Ningyi Wang, Borui Zhang, Shujuan Liu, Qiang Zhao. Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26040038 ****

N Y Wang, B R Zhang, S J Liu, and Q Zhao, Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040038

Citation:

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Enabling full-colour ultrahigh-resolution QLEDs via dual-action transfer printing and dielectric engineering

DOI: 10.1088/1674-4926/26040038

CSTR: 32376.14.1674-4926.26040038

1.
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
2.
School of Physics and Optoelectronic Engineering & School of Chemistry and Materials Science, Institute of Flexible Brain–Computer Interface, Nanjing University of Information Science and Technology, Nanjing 210044, China

More Information

Ningyi Wang received his B.S. degree in Electronic Science and Technology from Nanjing University of Posts and Telecommunications (NJUPT) in 2025. Currently, he is pursuing his Doctor degree under the supervision of Prof. Qiang Zhao at NJUPT. His recent research interests focused on flexible electronic materials and devices
Borui Zhang received his B.S. degree in Optoelectronic Information Science and Engineering from Nanjing University of Posts and Telecommunications (NJUPT) in 2024. Currently, he is pursuing his Doctor degree under the supervision of Prof. Qiang Zhao at NJUPT. His recent research interests focused on flexible electronic materials and devices
Shujuan Liu received her Ph.D. degree from Fudan University in 2006. She then joined the Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Nanjing University of Posts & Telecommunications. Since 2013, she has been a full professor. Her Her research area is organic and flexible electronics
Qiang Zhao received his Ph.D. degree from Fudan University in 2007. He then became a postdoctoral fellow at Nagoya University of Japan. He joined Nanjing University of Posts and Telecommunications in 2008. He was promoted as a full professor in 2010. Now he is the vice president of Nanjing University of Information Science and Technology. His research area is organic and flexible electronics
Corresponding author: iamsjliu@njupt.edu.cn; iamqzhao@njupt.edu.cn
Received Date: 2026-04-22
Available Online: 2026-05-18

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