Low-temperature mid-infrared photoluminescence of InAsP nanowires

Ratmir Ustimenko; Vladimir Fedorov; Danila Karaulov; Maksim Vinnichenko; Andrey Kaveev; Demid Kirilenko; Dmitry Miniv; Alexander Pavlov; David Hayrapetyan; Ivan Mukhin; Dmitry Firsov

doi:10.1088/1674-4926/26040048

J. Semicond. > Just Accepted

ARTICLES

Low-temperature mid-infrared photoluminescence of InAsP nanowires

Ratmir Ustimenko^1,, Vladimir Fedorov^{1, 2}, Danila Karaulov¹, Maksim Vinnichenko¹, Andrey Kaveev², Demid Kirilenko³, Dmitry Miniv^{1, 2}, Alexander Pavlov^{1, 2}, David Hayrapetyan^{4, 5}, Ivan Mukhin^{1, 2} and Dmitry Firsov¹

+ Author Affiliations

1. High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Saint Petersburg 195251, Russia
2. ReneLab, Alferov University, Saint Petersburg 194021, Russia
3. Solid State Physics Department, Saint Petersburg State University, Saint Petersburg 199034, Russia
4. Department of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, Armenia
5. Institute of Chemical Physics after A.B. Nalbandyan, Yerevan 0014, Armenia

Author Bio:

Ratmir Ustimenko received his master's degree in 2021 from Peter the Great St. Petersburg Polytechnic University. He is currently a PhD student under the supervision of Prof. Dmitry Firsov. He is an employee of the scientific laboratories of "Optics of nonequilibrium electrons" and "Epitaxial nanostructures of A3B5 compounds on silicon". His research focused on infrared absorption and emission in GeSi quantum dots and InAs-based nanowires.

Maksim Vinnichenko received his PhD from St. Petersburg State Polytechnic University in Physics and Mathematics on the topic "Processes of recombination and heating of charge carriers in nanostructures with quantum wells" in 2013. He is currently an Associate Professor at Peter the Great St.Petersburg Polytechnic University, Russia. His research focuses on optical phenomena and nonequilibrium charge carriers in semiconductors and nanostructures.

Corresponding author: R. Ustimenko, Email: ratmirustimenko@yandex.ru

DOI: 10.1088/1674-4926/26040048CSTR: 32376.14.1674-4926.26040048

Abstract: Nanowires of narrow bandgap III–V semiconductors are very promising for efficient light-emitting and photosensitive devices operating in the mid-infrared spectrum range. Low-temperature infrared photoluminescence spectra of InAs and InAsP nanowires, including CaF₂-passivated InAsP nanowires grown on a silicon substrate, were studied. The features in the spectra of InAsP nanowires were explained by the formation of a random close-packed stacking crystal structure with a predominance of the hexagonal (wurtzite) phase in nanowires and non-uniform distribution of stacking faults along their growth axis, as well as by radiation from parasitic bulk islands with the sphalerite phase. In structures without surface passivation, a red shift of spectrum was observed with increasing lattice temperature, consistent with the temperature dependence of the band gap. Passivation of the surface of InAsP nanowires using CaF₂ leads to a nontrivial behavior of the spectral position of the photoluminescence intensity maximum due to a decrease in the contribution of surface states to nonradiative recombination at temperatures below 77 K. Moreover, it is shown that passivation allows to observe a photoluminescence signal at higher lattice temperatures compared to nonpassivated structures. The pump power dependence demonstrated a blue shift of the spectrum with increasing optical power, attributed to the band-filling effect (shift in the quasi-Fermi level)

Keywords: nanowires, passivation, defects in solid, photoluminescence, InAsP

References

[1]	Ren P Y, Hu W, Zhang Q L, et al. Band-selective infrared photodetectors with complete-composition-range InAs_xP_1-x alloy nanowires. Adv Mater, 2014, 26(44): 7444 doi: 10.1002/adma.201402945
[2]	Ju S, Facchetti A, Xuan Y, et al. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nat Nanotechnol., 2007, 2(6): 378 doi: 10.1038/nnano.2007.151
[3]	Pournia S, Linser S, Jnawali G, et al. Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy. Nano Res, 2020, 13(6): 1586 doi: 10.1007/s12274-020-2774-0
[4]	Ghasemi M, Leshchenko E D, and Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires. Nanotechnology, 2020, 32(7): 072001 doi: 10.1088/1361-6528/abc3e2
[5]	Fang Z M, Ma K Y, Jaw D H, et al. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy. J Appl Phys, 1990, 67(11): 7034 doi: 10.1063/1.345050
[6]	Jurczak P, Zhang Y, Wu J, et al. Ten-fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer. Nano Lett, 2017, 17(6): 3629 doi: 10.1021/acs.nanolett.7b00803
[7]	Fedorov V, Vinnichenko M, Ustimenko R, et al. Non-uniformly strained core–shell InAs/InP nanowires for mid-infrared photonic applications. ACS Appl Nano Mater, 2023, 6(7): 5460 doi: 10.1021/acsanm.2c05575
[8]	De A, Pryor C E. Predicted band structures of III-V semiconductors in the wurtzite phase. Phys Rev B, 2010, 81(15): 155210 doi: 10.1103/PhysRevB.81.155210
[9]	Sourribes M J L, Isakov I, Panfilova M, et al. Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon. Nano Lett, 2014, 14(3): 1643 doi: 10.1021/nl5001554
[10]	Belabbes A, Panse C, Furthmüller J, et al. Electronic bands of III-V semiconductor polytypes and their alignment. Phys Rev B, 2012, 86(7): 075208 doi: 10.1103/PhysRevB.86.075208
[11]	Hiruma K, Yazawa M, Haraguchi K, et al. GaAs free-standing quantum-size wires. J Appl Phys, 1993, 74(5): 3162 doi: 10.1063/1.354585
[12]	Birman J L. Simplified LCAO method for zincblende, wurtzite, and mixed crystal structures. Phys Rev, 1959, 115(6): 1493 doi: 10.1103/PhysRev.115.1493
[13]	Yan Y, Dalpian G M, Al-Jassim M M, et al. Energetics and electronic structure of stacking faults in ZnO. Phys Rev B, 2004, 70(19): 193206 doi: 10.1103/PhysRevB.70.193206
[14]	Allen J E, Hemesath E R, Perea D E, et al. High-resolution detection of Au catalyst atoms in Si nanowires. Nat Nanotech, 2008, 3(3): 168 doi: 10.1038/nnano.2008.5
[15]	Anyebe E A. recent progress on the gold-free integration of ternary III–As antimonide nanowires directly on silicon. Nanomaterials, 2020, 10(10): 2064 doi: 10.3390/nano10102064
[16]	Kaveev A K, Fedorov V V, Pavlov A V, et al. Self-induced MBE-grown InAsP nanowires on Si wafers for SWIR applications. J Mater Chem C, 2025, 13(12): 6063 doi: 10.1039/D4TC04227A
[17]	Sun M H, Joyce H J, Gao Q, et al. Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation. Nano Lett, 2012, 12(7): 3378 doi: 10.1021/nl300015w
[18]	Zanolli Z, Pistol M E, Fröberg L E, et al. Quantum-confinement effects in InAs–InP core–shell nanowires. J Phys Condens. Matter, 2007, 19(29): 295219 doi: 10.1088/0953-8984/19/29/295219
[19]	D F Bezuidenhout. Calcium Fluoride (CaF₂). In Handbook of Optical Constants of Solids. Burlington: Academic Press, 1997: 815
[20]	Ishizaka A, Shiraki Y. Low temperature surface cleaning of silicon and its application to silicon MBE. J Electrochem Soc, 1986, 133(4): 666 doi: 10.1149/1.2108651
[21]	Al-Douri Y, Aourag H. The effect of pressure on the ionicity of In–V compounds. Phys B Condens Matter, 2002, 324(1): 173 doi: 10.1016/s0921-4526(02)01292-9
[22]	Cayron C. Diffraction artefacts from twins and stacking faults, and the mirage of hexagonal, polytypes or other superstructures. Scr Mater, 2021, 194: 113629 doi: 10.1016/j.scriptamat.2020.11.014
[23]	Gupta D, Goktas N I, Rao A, et al. Stacking defects in GaP nanowires: Electronic structure and optical properties. J Appl Phys, 2019, 126(8): 084306 doi: 10.1063/1.5110039
[24]	Möller M, de Lima M M, Cantarero A, et al. Optical emission of InAs nanowires. Nanotechnology, 2012, 23(37): 375704 doi: 10.1088/0957-4484/23/37/375704
[25]	Diedenhofen S L, Janssen O T A, Grzela G, et al. Strong geometrical dependence of the absorption of light in arrays of semiconductor nanowires. ACS Nano, 2011, 5(3): 2316 doi: 10.1021/nn103596n
[26]	Kaintz M, Cammarata A. From defects to devices: design guidelines for high-performance diamond-based solar cells and single-dopant diodes. 2026: arXiv: 2605.04942. https://arxiv.org/abs/2605.04942
[27]	Gonze X, Amadon B, Antonius G, et al. The Abinitproject: Impact, environment and recent developments. Comput Phys Commun, 2020, 248: 107042 doi: 10.1016/j.cpc.2019.107042
[28]	Tran F, Blaha P. Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys Rev Lett, 2009, 102(22): 226401 doi: 10.1103/PhysRevLett.102.226401
[29]	Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III–V compound semiconductors and their alloys, J Appl Phys, 2001, 89(11): 5815

Fig. 1. Cross-sectional SEM images of pristine InAs NWs (a), InAs_0.83P_0.17 / CaF₂ NWs (b) and InAs_0.69P_0.31 / CaF₂ NWs (c).

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Bright-filed TEM image of a representative InAs_0.83P_0.17 NW taken with an e-beam aligned along the <1-100> axis. The white arrows indicate the CaF2 shell; (b) EDX elemental maps showing the intensity distribution of X-ray emission associated with In, As, P, F and Ca. (c) HRTEM image. The white arrows indicate stacking-fault free WZ phase regions; (d) Corresponding SAED pattern taken along the<11-20>zone axis of the WZ structure. The dashed white arcs indicate the diffraction rings arising from the polycrystalline CaF₂ shell.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online). (a) HAADF-TEM image of a representative of InAs_0.69P_0.31 NW taken with an e-beam aligned along the <1-100> axis; (b) EDX elemental maps showing the intensity distribution of X-ray emission associated with In, As, P, F and Ca. (c, d) HRTEM images and corresponding SAED patterns taken in the (c) top and (d) bottom regions of NW taken along the <11-20> zone axis of the WZ structure (marked by colored polygons in (a)).

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Scheme of the experimental setup for optical measurements.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) PL spectra of InAs NWs at different temperatures and pump power P = 220 mW (a). PL spectra of InAs_0.76P_0.24 NWs at different pump power and T = 5 K (b).

DownLoad: Full-Size Img PowerPoint

Fig. 6. (Color online) PL spectra of InAs_0.83P_0.17 / CaF₂ (a) and InAs_0.69P_0.31 / CaF₂ (b) NWs for different temperatures at pumping power P = 220 mW.

DownLoad: Full-Size Img PowerPoint

Fig. 7. (Color online) (a) Temperature-dependent photoluminescence peak maximum position for pure InAs, InAsP and passivated InAsP / CaF2 NWs. (b) Dependencies of calculated Eg for ZB, WZ, 4H, 6H and 9R polytypes of the InAsP solid solution on phosphorus concentration (dots) and corresponding fit (solid lines), peaks positions of pure InAs and InAsP with different phosphorus concentration (circles), and top and base peaks positions of InAsP / CaF2 NWs (squares and stars).

DownLoad: Full-Size Img PowerPoint

[1]	Ren P Y, Hu W, Zhang Q L, et al. Band-selective infrared photodetectors with complete-composition-range InAs_xP_1-x alloy nanowires. Adv Mater, 2014, 26(44): 7444 doi: 10.1002/adma.201402945
[2]	Ju S, Facchetti A, Xuan Y, et al. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nat Nanotechnol., 2007, 2(6): 378 doi: 10.1038/nnano.2007.151
[3]	Pournia S, Linser S, Jnawali G, et al. Exploring the band structure of Wurtzite InAs nanowires using photocurrent spectroscopy. Nano Res, 2020, 13(6): 1586 doi: 10.1007/s12274-020-2774-0
[4]	Ghasemi M, Leshchenko E D, and Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires. Nanotechnology, 2020, 32(7): 072001 doi: 10.1088/1361-6528/abc3e2
[5]	Fang Z M, Ma K Y, Jaw D H, et al. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy. J Appl Phys, 1990, 67(11): 7034 doi: 10.1063/1.345050
[6]	Jurczak P, Zhang Y, Wu J, et al. Ten-fold enhancement of InAs nanowire photoluminescence emission with an InP passivation layer. Nano Lett, 2017, 17(6): 3629 doi: 10.1021/acs.nanolett.7b00803
[7]	Fedorov V, Vinnichenko M, Ustimenko R, et al. Non-uniformly strained core–shell InAs/InP nanowires for mid-infrared photonic applications. ACS Appl Nano Mater, 2023, 6(7): 5460 doi: 10.1021/acsanm.2c05575
[8]	De A, Pryor C E. Predicted band structures of III-V semiconductors in the wurtzite phase. Phys Rev B, 2010, 81(15): 155210 doi: 10.1103/PhysRevB.81.155210
[9]	Sourribes M J L, Isakov I, Panfilova M, et al. Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon. Nano Lett, 2014, 14(3): 1643 doi: 10.1021/nl5001554
[10]	Belabbes A, Panse C, Furthmüller J, et al. Electronic bands of III-V semiconductor polytypes and their alignment. Phys Rev B, 2012, 86(7): 075208 doi: 10.1103/PhysRevB.86.075208
[11]	Hiruma K, Yazawa M, Haraguchi K, et al. GaAs free-standing quantum-size wires. J Appl Phys, 1993, 74(5): 3162 doi: 10.1063/1.354585
[12]	Birman J L. Simplified LCAO method for zincblende, wurtzite, and mixed crystal structures. Phys Rev, 1959, 115(6): 1493 doi: 10.1103/PhysRev.115.1493
[13]	Yan Y, Dalpian G M, Al-Jassim M M, et al. Energetics and electronic structure of stacking faults in ZnO. Phys Rev B, 2004, 70(19): 193206 doi: 10.1103/PhysRevB.70.193206
[14]	Allen J E, Hemesath E R, Perea D E, et al. High-resolution detection of Au catalyst atoms in Si nanowires. Nat Nanotech, 2008, 3(3): 168 doi: 10.1038/nnano.2008.5
[15]	Anyebe E A. recent progress on the gold-free integration of ternary III–As antimonide nanowires directly on silicon. Nanomaterials, 2020, 10(10): 2064 doi: 10.3390/nano10102064
[16]	Kaveev A K, Fedorov V V, Pavlov A V, et al. Self-induced MBE-grown InAsP nanowires on Si wafers for SWIR applications. J Mater Chem C, 2025, 13(12): 6063 doi: 10.1039/D4TC04227A
[17]	Sun M H, Joyce H J, Gao Q, et al. Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation. Nano Lett, 2012, 12(7): 3378 doi: 10.1021/nl300015w
[18]	Zanolli Z, Pistol M E, Fröberg L E, et al. Quantum-confinement effects in InAs–InP core–shell nanowires. J Phys Condens. Matter, 2007, 19(29): 295219 doi: 10.1088/0953-8984/19/29/295219
[19]	D F Bezuidenhout. Calcium Fluoride (CaF₂). In Handbook of Optical Constants of Solids. Burlington: Academic Press, 1997: 815
[20]	Ishizaka A, Shiraki Y. Low temperature surface cleaning of silicon and its application to silicon MBE. J Electrochem Soc, 1986, 133(4): 666 doi: 10.1149/1.2108651
[21]	Al-Douri Y, Aourag H. The effect of pressure on the ionicity of In–V compounds. Phys B Condens Matter, 2002, 324(1): 173 doi: 10.1016/s0921-4526(02)01292-9
[22]	Cayron C. Diffraction artefacts from twins and stacking faults, and the mirage of hexagonal, polytypes or other superstructures. Scr Mater, 2021, 194: 113629 doi: 10.1016/j.scriptamat.2020.11.014
[23]	Gupta D, Goktas N I, Rao A, et al. Stacking defects in GaP nanowires: Electronic structure and optical properties. J Appl Phys, 2019, 126(8): 084306 doi: 10.1063/1.5110039
[24]	Möller M, de Lima M M, Cantarero A, et al. Optical emission of InAs nanowires. Nanotechnology, 2012, 23(37): 375704 doi: 10.1088/0957-4484/23/37/375704
[25]	Diedenhofen S L, Janssen O T A, Grzela G, et al. Strong geometrical dependence of the absorption of light in arrays of semiconductor nanowires. ACS Nano, 2011, 5(3): 2316 doi: 10.1021/nn103596n
[26]	Kaintz M, Cammarata A. From defects to devices: design guidelines for high-performance diamond-based solar cells and single-dopant diodes. 2026: arXiv: 2605.04942. https://arxiv.org/abs/2605.04942
[27]	Gonze X, Amadon B, Antonius G, et al. The Abinitproject: Impact, environment and recent developments. Comput Phys Commun, 2020, 248: 107042 doi: 10.1016/j.cpc.2019.107042
[28]	Tran F, Blaha P. Accurate band gaps of semiconductors and insulators with a semilocal exchange-correlation potential. Phys Rev Lett, 2009, 102(22): 226401 doi: 10.1103/PhysRevLett.102.226401
[29]	Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III–V compound semiconductors and their alloys, J Appl Phys, 2001, 89(11): 5815

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 2 Times PDF downloads: 0 Times Cited by: 0 Times

History

Received: 28 April 2026 Revised: 09 July 2026 Online: Accepted Manuscript: 05 August 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Ratmir Ustimenko, Vladimir Fedorov, Danila Karaulov, Maksim Vinnichenko, Andrey Kaveev, Demid Kirilenko, Dmitry Miniv, Alexander Pavlov, David Hayrapetyan, Ivan Mukhin, Dmitry Firsov. Low-temperature mid-infrared photoluminescence of InAsP nanowires[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26040048 ****R Ustimenko, V Fedorov, D Karaulov, M Vinnichenko, A Kaveev, D Kirilenko, D Miniv, A Pavlov, D Hayrapetyan, I Mukhin, and D Firsov, Low-temperature mid-infrared photoluminescence of InAsP nanowires[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040048

Citation:

R Ustimenko, V Fedorov, D Karaulov, M Vinnichenko, A Kaveev, D Kirilenko, D Miniv, A Pavlov, D Hayrapetyan, I Mukhin, and D Firsov, Low-temperature mid-infrared photoluminescence of InAsP nanowires[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26040048

Citation:

PDF( 6748 KB)

Low-temperature mid-infrared photoluminescence of InAsP nanowires

DOI: 10.1088/1674-4926/26040048

CSTR: 32376.14.1674-4926.26040048

1.
High School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Saint Petersburg 195251, Russia
2.
ReneLab, Alferov University, Saint Petersburg 194021, Russia
3.
Solid State Physics Department, Saint Petersburg State University, Saint Petersburg 199034, Russia
4.
Department of General Physics and Quantum Nanostructures, Russian-Armenian University, Yerevan 0051, Armenia
5.
Institute of Chemical Physics after A.B. Nalbandyan, Yerevan 0014, Armenia

More Information

Ratmir Ustimenko received his master's degree in 2021 from Peter the Great St. Petersburg Polytechnic University. He is currently a PhD student under the supervision of Prof. Dmitry Firsov. He is an employee of the scientific laboratories of "Optics of nonequilibrium electrons" and "Epitaxial nanostructures of A3B5 compounds on silicon". His research focused on infrared absorption and emission in GeSi quantum dots and InAs-based nanowires
Maksim Vinnichenko received his PhD from St. Petersburg State Polytechnic University in Physics and Mathematics on the topic "Processes of recombination and heating of charge carriers in nanostructures with quantum wells" in 2013. He is currently an Associate Professor at Peter the Great St.Petersburg Polytechnic University, Russia. His research focuses on optical phenomena and nonequilibrium charge carriers in semiconductors and nanostructures
Corresponding author: R. Ustimenko, Email: ratmirustimenko@yandex.ru
Received Date: 2026-04-28
Revised Date: 2026-07-09

Available Online: 2026-08-05

Abstract

Abstract

Nanowires of narrow bandgap III–V semiconductors are very promising for efficient light-emitting and photosensitive devices operating in the mid-infrared spectrum range. Low-temperature infrared photoluminescence spectra of InAs and InAsP nanowires, including CaF₂-passivated InAsP nanowires grown on a silicon substrate, were studied. The features in the spectra of InAsP nanowires were explained by the formation of a random close-packed stacking crystal structure with a predominance of the hexagonal (wurtzite) phase in nanowires and non-uniform distribution of stacking faults along their growth axis, as well as by radiation from parasitic bulk islands with the sphalerite phase. In structures without surface passivation, a red shift of spectrum was observed with increasing lattice temperature, consistent with the temperature dependence of the band gap. Passivation of the surface of InAsP nanowires using CaF₂ leads to a nontrivial behavior of the spectral position of the photoluminescence intensity maximum due to a decrease in the contribution of surface states to nonradiative recombination at temperatures below 77 K. Moreover, it is shown that passivation allows to observe a photoluminescence signal at higher lattice temperatures compared to nonpassivated structures. The pump power dependence demonstrated a blue shift of the spectrum with increasing optical power, attributed to the band-filling effect (shift in the quasi-Fermi level)
- nanowires,
- passivation,
- defects in solid,
- photoluminescence,
- InAsP

FullText(HTML)

References(29)