Deep-mesa-terminated β-Ga2O3 Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current

Shengliang Cheng; Xing Lu; Shiyu Zhang; Yiming Zhang; Paiwen Fang; Mingxian Luo; Huichao Hu; Rui Zhou; Rui Xie; Haowen Luo; Huaxing Jiang; Zhisheng Wu; Jun Liang; Zimin Chen; Gang Wang; Yanli Pei

doi:10.1088/1674-4926/26050007

J. Semicond. > Just Accepted

ARTICLES

Deep-mesa-terminated β-Ga₂O₃ Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current

Shengliang Cheng¹, Xing Lu^1,, Shiyu Zhang¹, Yiming Zhang¹, Paiwen Fang¹, Mingxian Luo¹, Huichao Hu¹, Rui Zhou¹, Rui Xie¹, Haowen Luo², Huaxing Jiang², Zhisheng Wu¹, Jun Liang³, Zimin Chen¹, Gang Wang¹ and Yanli Pei^1,

+ Author Affiliations

1. School of Electronics and Information Technology, Sun Yat-sen university, Guangzhou 510275, China
2. South China University of Technology, Guangzhou 511442, China
3. Shenzhen Institute of Information Technology, Shenzhen 518172, China

Author Bio:

Shengliang Cheng received the Ph.D. degree from the Sun Yat-sen University under the supervision of Prof. Yanli Pei and Prof. Xing Lu. His research focuses on Ga₂O₃ junction barrier Schottky diodes.

Xing Lu received the B.S. degree from Fudan University, Shanghai, China, and the Ph.D. degree from The Hong Kong Univer sity of Science and Technology, Hong Kong. He is currently an Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Elec tronics and Information Technology, Sun Yat-sen University, Guangzhou, China.

Jun Liang received his PhD from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, in 2006. He is currently an Associate Professor at the School of Microelectronics, Shenzhen Institute of Information Technology. As early as 2018, Shenzhen Institute of Information Technology set up a project team to launch research on gallium oxide equipment, material epitaxy and device fabrication. The institute has undertaken national key research projects and industry collaborative projects, and built the Ministry of Education Collaborative Innovation Center for Compound Semiconductors.

Yanli Pei received the B.S. degree from Zhejiang University, Hangzhou, China, and the Ph.D. degree from the Hiroshima University, Japan. She is currently an Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Elec tronics and Information Technology, Sun Yat-sen University, Guangzhou, China.

Corresponding author: Xing Lu, lux86@mail.sysu.edu.cn; Yanli Pei, peiyanli@mail.sysu.edu.cn

DOI: 10.1088/1674-4926/26050007CSTR: 32376.14.1674-4926.26050007

Abstract: This work reports deep-mesa-terminated β-Ga₂O₃ junction barrier Schottky (Mesa-JBS) diodes that achieve high breakdown voltage (BV) and ultralow reverse leakage current. The proposed architecture integrates a micron-scale deep mesa termination to suppress edge-induced leakage current with a buried p-NiO heterojunction beneath the anode to electrostatically suppress Schottky barrier tunneling, thereby mitigating both edge-related and Schottky-barrier tunneling leakage pathways. Small-area devices (0.2 × 0.2 mm²) exhibit a BV of 1.96 kV with a reverse leakage current density below 10^–5 A/cm² at 1 kV. To demonstrate scalability, large-area Mesa-JBS diodes (2 × 2 mm²) were fabricated and packaged for high-current operation. These devices deliver a forward current of 3.8 A at 3 V while sustaining a BV of up to 1.2 kV, with reverse leakage currents below 20 nA (approximately 1×10^–6 A/cm²) at 1 kV. These results establish deep-mesa-terminated JBS diodes as a promising and scalable solution for high-voltage, low-loss β-Ga₂O₃ power rectifiers.

Keywords: β-Ga₂O₃, mesa-termination junction barrier Schottky (Mesa-JBS) diodes, large area devices, power device, low reverse leakage

References

[1]	Lu X, Deng Y X, Pei Y L, et al. Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics. J Semicond, 2023, 44(6): 061802 doi: 10.1088/1674-4926/44/6/061802
[2]	Zhang M L, Liu Z, Yang L L, et al. β-Ga₂O₃-based power devices: A concise review. Crystals, 2022, 12(3): 406 doi: 10.3390/cryst12030406
[3]	Wang C L, Zhang J C, Xu S R, et al. Progress in state-of-the-art technologies of Ga₂O₃ devices. J Phys D Appl Phys, 2021, 54(24): 243001 doi: 10.1088/1361-6463/abe158
[4]	Pan A L, Wang Y Z, Zheng X F, et al. Insight into the leakage current transport mechanism transformation in β-Ga₂O₃ SBDs under forward bias stress. IEEE Trans Electron Devices, 2023, 70(6): 3185 doi: 10.1109/TED.2023.3267756
[5]	Neudeck P G. Silicon carbide technology. The VLSI Handbook. Boca Raton: CRC Press, 2007
[6]	Nakamura T, Nakano Y, Aketa M, et al. High performance SiC trench devices with ultra-low Ron. International Electron Devices Meeting (IEDM), 2012: 26.5. 1
[7]	Zhou F, Xu W Z, Ren F F, et al. Demonstration of avalanche and surge current robustness in GaN junction barrier Schottky diode with 600-V/10-A switching capability. IEEE Trans Power Electron, 2021, 36(11): 12163 doi: 10.1109/TPEL.2021.3076694
[8]	Cheng S L, Lai Y R, Lu X, et al. Low leakage current β-Ga₂O₃ self-aligned trench junction barrier Schottky diodes. IEEE Trans Electron Devices, 2025, 72(7): 3497 doi: 10.1109/TED.2025.3571880
[9]	Roy S, Bhattacharyya A, Ranga P, et al. High-k oxide field-plated vertical (001) β-Ga₂O₃ Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm². IEEE Electron Device Lett, 2021, 42(8): 1140 doi: 10.1109/LED.2021.3089945
[10]	Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/R_{on, sp} of up to 0.95 GW/cm². IEEE Electron Device Lett, 2020, 41(1): 107 doi: 10.1109/LED.2019.2953559
[11]	Hao W B, Wu F H, Li W S, et al. Improved vertical β-Ga₂O₃ Schottky barrier diodes with conductivity-modulated p-NiO junction termination extension. IEEE Trans Electron Devices, 2023, 70(4): 2129 doi: 10.1109/TED.2023.3241885
[12]	Wang B Y, Xiao M, Spencer J, et al. 2.5 kV vertical Ga₂O₃ Schottky rectifier with graded junction termination extension. IEEE Electron Device Lett, 2023, 44(2): 221 doi: 10.1109/LED.2022.3229222
[13]	Han Z, Jian G Z, Zhou X Z, et al. 2.7 kV low leakage vertical PtO_x/β-Ga₂O₃ Schottky barrier diodes with self-aligned mesa termination. IEEE Electron Device Lett, 2023, 44(10): 1680 doi: 10.1109/LED.2023.3305389
[14]	Dhara S, Kalarickal N K, Dheenan A, et al. β-Ga₂O₃ Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination. Appl Phys Lett, 2022, 121(20): 203501 doi: 10.1063/5.0123284
[15]	Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm² or a 5 A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36(6): 6179 doi: 10.1109/TPEL.2020.3036442
[16]	Su C X, Zhou H, Zhang K, et al. Low turn-on voltage and 2.3 kV β-Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode. Appl Phys Lett, 2024, 124(17): 173506 doi: 10.1063/5.0189890
[17]	Hao W B, Xu G W, Wu F H, et al. 2.7 kV β-Ga2O3 heterojunction barrier Schottky diode with low leakage current < 1 mA/cm² based upon RESURF effect. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024: 244
[18]	Hu T C, Wang Z P, Sun N, et al. A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode. Appl Phys Lett, 2023, 123: 013507 doi: 10.1063/5.0147251
[19]	Yan Q L, Gong H H, Zhang J C, et al. β-Ga₂O₃ hetero-junction barrier Schottky diode with reverse leakage current modulation and BV²/R_{on, sp} value of 0.93 GW/cm². Appl Phys Lett, 2021, 118(12): 122102. doi: 10.1063/5.0044130
[20]	He Q, Hao W B, Li Q Y, et al. β-Ga₂O₃ junction barrier Schottky diode with NiO p-well floating field rings. Chin Phys B, 2023, 32(12): 128507 doi: 10.1088/1674-1056/accf69
[21]	Gong H H, Yu X X, Xu Y, et al. β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 2021, 118(20): 202102 doi: 10.1063/5.0050919
[22]	Gong H H, Sun N, Hu T C, et al. Ga₂O₃/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact. Appl Phys Lett, 2024, 124(23): 233507 doi: 10.1063/5.0211124
[23]	Stein S R, Khachariya D, Mecouch W, et al. Analysis of vertical GaN JBS and p-n diodes by Mg ion implantation and ultrahigh-pressure annealing. IEEE Trans Electron Devices, 2024, 71(3): 1494 doi: 10.1109/TED.2023.3339592
[24]	Liu X K, Li B, Wu J Y, et al. Vertical GaN-on-GaN trench junction barrier Schottky diodes with a slanted sidewall. IEEE J Electron Devices Soc, 2024, 12: 34 doi: 10.1109/JEDS.2023.3340512
[25]	Wu F H, Wang Y G, Jian G Z, et al. Superior performance β-Ga₂O₃ junction barrier Schottky diodes implementing p-NiO heterojunction and beveled field plate for hybrid Cockcroft–Walton voltage multiplier. IEEE Trans Electron Devices, 2023, 70(3): 1199 doi: 10.1109/TED.2023.3239062
[26]	Takatsuka A, Miyamoto H, Sasaki K, et al. Fabrication of ampere-class p-Cu₂O/n-β-Ga₂O₃ trench heterojunction barrier Schottky diodes and double-pulse evaluation. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023: 342
[27]	Zhang F, Zheng X F, He Y L, et al. The impact of anode p+ islands layout on the performance of NiO_x/β-Ga₂O₃ hetero-junction barrier Schottky diodes. IEEE Trans Electron Devices, 2023, 70(11): 5603 doi: 10.1109/TED.2023.3317815
[28]	Guo W, Han Z, Zhao X L, et al. Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters. J Semicond, 2023, 44(7): 072805 doi: 10.1088/1674-4926/44/7/072805
[29]	Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga₂O₃ Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36(10): 10976 doi: 10.1109/TPEL.2021.3069918
[30]	Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7×1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio. Appl Phys Express, 2021, 15(1): 016501
[31]	Yan Q L, Gong H H, Zhou H, et al. Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiO_x termination. Appl Phys Lett, 2022, 120(9): 092106. doi: 10.1063/5.0082377
[32]	Wei J, Wei Y X, Lu J, et al. Experimental study on electrical characteristics of large-size vertical β-Ga₂O₃ junction barrier Schottky diodes. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022: 97
[33]	Gong H H, Zhou F, Xu W Z, et al. 1.37 kV/12 A NiO/β-Ga₂O₃ heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Electron, 2021, 36(11): 12213 doi: 10.1109/TPEL.2021.3082640
[34]	Tanaka N, Hasegawa K, Yasunishi K, et al. 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V. Appl Phys Express, 2015, 8(7): 071001 doi: 10.7567/APEX.8.071001
[35]	Hasegawa K, Nishio G, Yasunishi K, et al. Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V. Appl Phys Express, 2017, 10(12): 121002 doi: 10.7567/APEX.10.121002

Fig. 1. (Color online) Cross-sectional schematics of (a) the proposed β-Ga₂O₃ Mesa-JBS diode without, (b) with field plate, (c) conventional JBS, and (d) Mesa-PND with field plate.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Simulated electric field distribution of different device configurations under the same reverse voltage of –1.5 kV. (a) Conventional JBS; the maximum electric field (Emax) is 8.39 MV/cm in β-Ga₂O₃. (b) Mesa-JBS diode without SiO2 FP; Emax is 5.8 MV/cm at β-Ga₂O₃ trench corner. (c) Mesa-JBS diode with SiO2 FP; Emax is 5.8 MV/cm at β- Ga₂O₃ trench corner. (d) Mesa-JBS diode with SiO₂ FP and passivation; Emax is 6.8 MV/cm in SiO₂.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Fabrication process flow of the proposed β-Ga₂O₃ Mesa-JBS diodes.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) (a) Linear-scale IF-VF characteristics and (b) extracted Ron,sp of the fabricated small-area conventional JBS, Mesa-JBS, and Mesa-PND diodes. (c) Comparison of IR–VR characteristics for these small-area diodes. (d) benchmark plot of Ron,sp versus BV (defined at a leakage current density of 10 mA/cm²) for reported small-area (<0.5 × 0.5 mm²) β-Ga₂O₃ and GaN JBSs.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Linear-scale I_F-V_F and (b) I_R–V_R characteristics of the fabricated large-area Mesa-JBS diode with a SiO₂ FP, compared with a conventional β-Ga₂O₃ SBD under the same area. (c) BV (defined at a leakage current density of 10 mA/cm²) versus anode area for the reported large-area β-Ga₂O₃ and GaN diodes (>0.9 × 0.9 mm²). (d) Reverse leakage currents (at –1 kV) of these diodes as a function of anode area.

DownLoad: Full-Size Img PowerPoint

[1]	Lu X, Deng Y X, Pei Y L, et al. Recent advances in NiO/Ga₂O₃ heterojunctions for power electronics. J Semicond, 2023, 44(6): 061802 doi: 10.1088/1674-4926/44/6/061802
[2]	Zhang M L, Liu Z, Yang L L, et al. β-Ga₂O₃-based power devices: A concise review. Crystals, 2022, 12(3): 406 doi: 10.3390/cryst12030406
[3]	Wang C L, Zhang J C, Xu S R, et al. Progress in state-of-the-art technologies of Ga₂O₃ devices. J Phys D Appl Phys, 2021, 54(24): 243001 doi: 10.1088/1361-6463/abe158
[4]	Pan A L, Wang Y Z, Zheng X F, et al. Insight into the leakage current transport mechanism transformation in β-Ga₂O₃ SBDs under forward bias stress. IEEE Trans Electron Devices, 2023, 70(6): 3185 doi: 10.1109/TED.2023.3267756
[5]	Neudeck P G. Silicon carbide technology. The VLSI Handbook. Boca Raton: CRC Press, 2007
[6]	Nakamura T, Nakano Y, Aketa M, et al. High performance SiC trench devices with ultra-low Ron. International Electron Devices Meeting (IEDM), 2012: 26.5. 1
[7]	Zhou F, Xu W Z, Ren F F, et al. Demonstration of avalanche and surge current robustness in GaN junction barrier Schottky diode with 600-V/10-A switching capability. IEEE Trans Power Electron, 2021, 36(11): 12163 doi: 10.1109/TPEL.2021.3076694
[8]	Cheng S L, Lai Y R, Lu X, et al. Low leakage current β-Ga₂O₃ self-aligned trench junction barrier Schottky diodes. IEEE Trans Electron Devices, 2025, 72(7): 3497 doi: 10.1109/TED.2025.3571880
[9]	Roy S, Bhattacharyya A, Ranga P, et al. High-k oxide field-plated vertical (001) β-Ga₂O₃ Schottky barrier diode with Baliga’s figure of merit over 1 GW/cm². IEEE Electron Device Lett, 2021, 42(8): 1140 doi: 10.1109/LED.2021.3089945
[10]	Li W S, Nomoto K, Hu Z Y, et al. Field-plated Ga₂O₃ trench Schottky barrier diodes with a BV²/R_{on, sp} of up to 0.95 GW/cm². IEEE Electron Device Lett, 2020, 41(1): 107 doi: 10.1109/LED.2019.2953559
[11]	Hao W B, Wu F H, Li W S, et al. Improved vertical β-Ga₂O₃ Schottky barrier diodes with conductivity-modulated p-NiO junction termination extension. IEEE Trans Electron Devices, 2023, 70(4): 2129 doi: 10.1109/TED.2023.3241885
[12]	Wang B Y, Xiao M, Spencer J, et al. 2.5 kV vertical Ga₂O₃ Schottky rectifier with graded junction termination extension. IEEE Electron Device Lett, 2023, 44(2): 221 doi: 10.1109/LED.2022.3229222
[13]	Han Z, Jian G Z, Zhou X Z, et al. 2.7 kV low leakage vertical PtO_x/β-Ga₂O₃ Schottky barrier diodes with self-aligned mesa termination. IEEE Electron Device Lett, 2023, 44(10): 1680 doi: 10.1109/LED.2023.3305389
[14]	Dhara S, Kalarickal N K, Dheenan A, et al. β-Ga₂O₃ Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination. Appl Phys Lett, 2022, 121(20): 203501 doi: 10.1063/5.0123284
[15]	Lv Y J, Wang Y G, Fu X C, et al. Demonstration of β-Ga₂O₃ junction barrier Schottky diodes with a Baliga’s figure of merit of 0.85 GW/cm² or a 5 A/700 V handling capabilities. IEEE Trans Power Electron, 2021, 36(6): 6179 doi: 10.1109/TPEL.2020.3036442
[16]	Su C X, Zhou H, Zhang K, et al. Low turn-on voltage and 2.3 kV β-Ga₂O₃ heterojunction barrier Schottky diodes with Mo anode. Appl Phys Lett, 2024, 124(17): 173506 doi: 10.1063/5.0189890
[17]	Hao W B, Xu G W, Wu F H, et al. 2.7 kV β-Ga2O3 heterojunction barrier Schottky diode with low leakage current < 1 mA/cm² based upon RESURF effect. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024: 244
[18]	Hu T C, Wang Z P, Sun N, et al. A self-aligned Ga₂O₃ heterojunction barrier Schottky power diode. Appl Phys Lett, 2023, 123: 013507 doi: 10.1063/5.0147251
[19]	Yan Q L, Gong H H, Zhang J C, et al. β-Ga₂O₃ hetero-junction barrier Schottky diode with reverse leakage current modulation and BV²/R_{on, sp} value of 0.93 GW/cm². Appl Phys Lett, 2021, 118(12): 122102. doi: 10.1063/5.0044130
[20]	He Q, Hao W B, Li Q Y, et al. β-Ga₂O₃ junction barrier Schottky diode with NiO p-well floating field rings. Chin Phys B, 2023, 32(12): 128507 doi: 10.1088/1674-1056/accf69
[21]	Gong H H, Yu X X, Xu Y, et al. β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 2021, 118(20): 202102 doi: 10.1063/5.0050919
[22]	Gong H H, Sun N, Hu T C, et al. Ga₂O₃/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact. Appl Phys Lett, 2024, 124(23): 233507 doi: 10.1063/5.0211124
[23]	Stein S R, Khachariya D, Mecouch W, et al. Analysis of vertical GaN JBS and p-n diodes by Mg ion implantation and ultrahigh-pressure annealing. IEEE Trans Electron Devices, 2024, 71(3): 1494 doi: 10.1109/TED.2023.3339592
[24]	Liu X K, Li B, Wu J Y, et al. Vertical GaN-on-GaN trench junction barrier Schottky diodes with a slanted sidewall. IEEE J Electron Devices Soc, 2024, 12: 34 doi: 10.1109/JEDS.2023.3340512
[25]	Wu F H, Wang Y G, Jian G Z, et al. Superior performance β-Ga₂O₃ junction barrier Schottky diodes implementing p-NiO heterojunction and beveled field plate for hybrid Cockcroft–Walton voltage multiplier. IEEE Trans Electron Devices, 2023, 70(3): 1199 doi: 10.1109/TED.2023.3239062
[26]	Takatsuka A, Miyamoto H, Sasaki K, et al. Fabrication of ampere-class p-Cu₂O/n-β-Ga₂O₃ trench heterojunction barrier Schottky diodes and double-pulse evaluation. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023: 342
[27]	Zhang F, Zheng X F, He Y L, et al. The impact of anode p+ islands layout on the performance of NiO_x/β-Ga₂O₃ hetero-junction barrier Schottky diodes. IEEE Trans Electron Devices, 2023, 70(11): 5603 doi: 10.1109/TED.2023.3317815
[28]	Guo W, Han Z, Zhao X L, et al. Large-area β-Ga₂O₃ Schottky barrier diode and its application in DC–DC converters. J Semicond, 2023, 44(7): 072805 doi: 10.1088/1674-4926/44/7/072805
[29]	Wei Y X, Luo X R, Wang Y G, et al. Experimental study on static and dynamic characteristics of Ga₂O₃ Schottky barrier diodes with compound termination. IEEE Trans Power Electron, 2021, 36(10): 10976 doi: 10.1109/TPEL.2021.3069918
[30]	Otsuka F, Miyamoto H, Takatsuka A, et al. Large-size (1.7×1.7 mm²) β-Ga₂O₃ field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 10⁹ high on/off current ratio. Appl Phys Express, 2021, 15(1): 016501
[31]	Yan Q L, Gong H H, Zhou H, et al. Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiO_x termination. Appl Phys Lett, 2022, 120(9): 092106. doi: 10.1063/5.0082377
[32]	Wei J, Wei Y X, Lu J, et al. Experimental study on electrical characteristics of large-size vertical β-Ga₂O₃ junction barrier Schottky diodes. International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022: 97
[33]	Gong H H, Zhou F, Xu W Z, et al. 1.37 kV/12 A NiO/β-Ga₂O₃ heterojunction diode with nanosecond reverse recovery and rugged surge-current capability. IEEE Trans Power Electron, 2021, 36(11): 12213 doi: 10.1109/TPEL.2021.3082640
[34]	Tanaka N, Hasegawa K, Yasunishi K, et al. 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V. Appl Phys Express, 2015, 8(7): 071001 doi: 10.7567/APEX.8.071001
[35]	Hasegawa K, Nishio G, Yasunishi K, et al. Vertical GaN trench MOS barrier Schottky rectifier maintaining low leakage current at 200 °C with blocking voltage of 750 V. Appl Phys Express, 2017, 10(12): 121002 doi: 10.7567/APEX.10.121002

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Received: 07 May 2026 Revised: 29 June 2026 Online: Accepted Manuscript: 03 September 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Shengliang Cheng, Xing Lu, Shiyu Zhang, Yiming Zhang, Paiwen Fang, Mingxian Luo, Huichao Hu, Rui Zhou, Rui Xie, Haowen Luo, Huaxing Jiang, Zhisheng Wu, Jun Liang, Zimin Chen, Gang Wang, Yanli Pei. Deep-mesa-terminated β-Ga2O3 Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26050007 ****S L Cheng, X Lu, S Y Zhang, Y M Zhang, P W Fang, M X Luo, H C Hu, R Zhou, R Xie, H W Luo, H X Jiang, Z S Wu, J Liang, Z M Chen, G Wang, and Y L Pei, Deep-mesa-terminated β-Ga2O3 Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26050007

Citation:

S L Cheng, X Lu, S Y Zhang, Y M Zhang, P W Fang, M X Luo, H C Hu, R Zhou, R Xie, H W Luo, H X Jiang, Z S Wu, J Liang, Z M Chen, G Wang, and Y L Pei, Deep-mesa-terminated β-Ga₂O₃ Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26050007

Citation:

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Deep-mesa-terminated β-Ga₂O₃ Junction Barrier Schottky Diodes with Suppressed Reverse Leakage Current

DOI: 10.1088/1674-4926/26050007

CSTR: 32376.14.1674-4926.26050007

1.
School of Electronics and Information Technology, Sun Yat-sen university, Guangzhou 510275, China
2.
South China University of Technology, Guangzhou 511442, China
3.
Shenzhen Institute of Information Technology, Shenzhen 518172, China

More Information

Shengliang Cheng received the Ph.D. degree from the Sun Yat-sen University under the supervision of Prof. Yanli Pei and Prof. Xing Lu. His research focuses on Ga₂O₃ junction barrier Schottky diodes
Xing Lu received the B.S. degree from Fudan University, Shanghai, China, and the Ph.D. degree from The Hong Kong Univer sity of Science and Technology, Hong Kong. He is currently an Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Elec tronics and Information Technology, Sun Yat-sen University, Guangzhou, China
Jun Liang received his PhD from the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, in 2006. He is currently an Associate Professor at the School of Microelectronics, Shenzhen Institute of Information Technology. As early as 2018, Shenzhen Institute of Information Technology set up a project team to launch research on gallium oxide equipment, material epitaxy and device fabrication. The institute has undertaken national key research projects and industry collaborative projects, and built the Ministry of Education Collaborative Innovation Center for Compound Semiconductors
Yanli Pei received the B.S. degree from Zhejiang University, Hangzhou, China, and the Ph.D. degree from the Hiroshima University, Japan. She is currently an Professor with the State Key Laboratory of Optoelectronic Materials and Technologies, School of Elec tronics and Information Technology, Sun Yat-sen University, Guangzhou, China
Corresponding author: lux86@mail.sysu.edu.cn; peiyanli@mail.sysu.edu.cn
Received Date: 2026-05-07
Revised Date: 2026-06-29

Available Online: 2026-09-03

Abstract

Abstract

This work reports deep-mesa-terminated β-Ga₂O₃ junction barrier Schottky (Mesa-JBS) diodes that achieve high breakdown voltage (BV) and ultralow reverse leakage current. The proposed architecture integrates a micron-scale deep mesa termination to suppress edge-induced leakage current with a buried p-NiO heterojunction beneath the anode to electrostatically suppress Schottky barrier tunneling, thereby mitigating both edge-related and Schottky-barrier tunneling leakage pathways. Small-area devices (0.2 × 0.2 mm²) exhibit a BV of 1.96 kV with a reverse leakage current density below 10^–5 A/cm² at 1 kV. To demonstrate scalability, large-area Mesa-JBS diodes (2 × 2 mm²) were fabricated and packaged for high-current operation. These devices deliver a forward current of 3.8 A at 3 V while sustaining a BV of up to 1.2 kV, with reverse leakage currents below 20 nA (approximately 1×10^–6 A/cm²) at 1 kV. These results establish deep-mesa-terminated JBS diodes as a promising and scalable solution for high-voltage, low-loss β-Ga₂O₃ power rectifiers.
- β-Ga₂O₃,
- mesa-termination junction barrier Schottky (Mesa-JBS) diodes,
- large area devices,
- power device,
- low reverse leakage

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