1.6 kV/ 1.47 GW·cm<sup>−2</sup> AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions

Jingting He; Zhizhong Wang; Wenjie Mi; Qiong Zhang; Fuping Huang; Chunshuang Chu; Kangkai Tian; Haoyan Liu; Yonghui Zhang; Shuting Cai; Xiao Wei Sun; Zihui Zhang

doi:10.1088/1674-4926/26050011

J. Semicond. > Just Accepted

ARTICLES

1.6 kV/ 1.47 GW·cm⁻² AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions

Jingting He^{1, §}, Zhizhong Wang^{2, §}, Wenjie Mi¹, Qiong Zhang¹, Fuping Huang¹, Chunshuang Chu¹, Kangkai Tian¹, Haoyan Liu³, Yonghui Zhang³, Shuting Cai¹, Xiao Wei Sun⁴ and Zihui Zhang^{1, 3,}

+ Author Affiliations

1. School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
2. School of Physics and Electronic Engineering, Shanxi University, Taiyuan, 030006, China
3. State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
4. Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
^§Jingting He and Zhizhong Wang contributed equally to this work and should be considered as co-first authors.

Author Bio:

Jingting He received her bachelor’s and master’s degrees from China University of Petroleum in 2015 and 2018, respectively. She is currently a Ph.D. candidate at Guangdong University of Technology. Her research primarily focuses on the design and fabrication for gallium nitride power semiconductor devices.

Zhizhong Wang received his Ph.D. from Hebei University of Technology. He is currently a faculty member at the School of Physics and Electronic Engineering, Shan Xi University. His research primarily focuses on the design and fabrication for gallium nitride power semiconductor devices.

Zihui Zhang received his B. S. from Shandong University and Ph.D. from Nanyang Technological University. Before he joined Guangdong University of Technology as a Distinguished Professor, he was a Professor at Hebei University of Technology. He is also a “100-Talent-Plan” Distinguished Professor of Hebei Province. His research interests include III-nitride-based semiconductor materials and devices, semiconductor device physics, device modeling and simulation.

Corresponding author: Zihui Zhang, zh.zhang@hebut.edu.cn

DOI: 10.1088/1674-4926/26050011CSTR: 32376.14.1674-4926.26050011

Abstract: AlGaN/GaN-based Schottky barrier diodes grown on Si substrates with n-GaN/p-NiO/n-GaN lateral junctions are proposed and fabricated. The n-GaN/p-NiO/n-GaN lateral junctions effectively extend the depletion region in the GaN drift layer. The more homogenized electric field reduces the electric field magnitude near both the Schottky contact and the field plate (FP) edge. Consequently, the fabricated lateral power device achieves a breakdown voltage (BV) of ~1.6 kV and yields a high Baliga’s figure of merit (BFOM) of ~1.47 GW·cm⁻². The n-GaN/p-NiO/n-GaN lateral junctions also contribute to suppressing the electron trapping effect and reducing the dynamic specific on-resistance (R_on,sp) by 1.5 times. With the developed physical models, we have also investigated the impact of different p-NiO designs on the blocking effect for the proposed device. We report that the n-GaN layer in the n-GaN/p-NiO/n-GaN lateral junctions shall be effectively depleted so that AlGaN/GaN-based Schottky barrier diodes with high BV can be achieved.

Keywords: AlGaN/GaN-based Schottky barrier diodes, power device, 2DEG

References

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[26]	Colón A, Douglas E A, Pope A J, et al. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm² specific on-resistance AlGaN/GaN Schottky barrier diode. Solid State Electron, 2019, 151: 47 doi: 10.1016/j.sse.2018.10.009
[27]	Zhang T, Zhang Y N, Li R H, et al. Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV. Appl Phys Lett, 2022, 120(9): 092102 doi: 10.1063/5.0077691
[28]	Deng S, Liu K, Wang C, et al. The influence of recessed floating metal rings structure on electrical properties of AlGaN/GaN Schottky barrier diodes. Phys Status Solidi A, 2022, 219(2): 2100502 doi: 10.1002/pssa.202100502
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Fig. 1. (Color online) Schematic cross-sections for (a) Device R and (b) Device P, respectively. (c1) SEM image of p-NiO structure for the Device P. (c2) Cross-sectional TEM image of the p-NiO/n-GaN junction for Device P. (c3) Zoomed-in TEM image of n-GaN/AlGaN/GaN structure.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Schematic diagram of lateral junctions inhibiting the electron capture process. Simulated electrical potential distributions for (b) Device R and (c) Device P, respectively. (d) Simulated electric field profiles along the horizontal direction for Devices R and P at the reverse voltage of −200 V.

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Fig. 3. (Color online) (a) Measured and simulated reverse J−V characteristics for Devices R and P. Measured leakage current as the function of reverse bias at different temperatures from 300 to 400 K for (b) Device R and (c) Device P, respectively. Insets in Figs. 3(b) and (c) linear relationship between Ln(J) and Ln(T ²).

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Fig. 4. (Color online) (a) Measured forward J−V characteristics and calculated R_on,sp for Devices R and P. (b) Measured C−V characteristics for Devices R and P.

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Fig. 5. (Color online) Benchmark plot for (a) BV in terms of R_on,sp and (b) R_on,sp in terms of BFOM for Device P and other reported AlGaN/GaN power devices.

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Fig. 6. (Color online) (a) Measured dynamic R_on,sp/static R_on,sp as a function of different electrical stresses. (b) Measured dynamic R_on,sp1/static R_on,sp as a function of the reverse stress duration.

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Fig. 7. (Color online) (a)−(c) Simulated reverse J−V characteristics for AlGaN/GaN-based SBDs with different N and number of p-NiO rings, respectively. (d) BV as a function of number of p-NiO rings for SBDs with different N extracted from numerical simulation.

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Fig. 8. (Color online) Simulated reverse J−V characteristics for SBDs with different (a) S and (b) L. BV as a function of S for (c) Devices B1−B5 and L for (d) Devices C1−C5.

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Table 1. Comparison of dynamic R_on,sp degradation under reverse-bias stress for Device P and other reported AlGaN/GaN power devices

References	Substrates	Stress voltage (V)	Stress time (s)	Pulse width/period (ms)	ΔR_on,sp (%)
[42]	Sapphire	−250		10/100	21.3
[42]	Sapphire	−600	10		8.6
[43]	Si	−100		5/100	35
[6]	Si	−500	0.1		35
[44]	Si	−100		2/12	3.5
[44]	Si	−100		2/12	16
This work	Si	−500	100		27
This work	Si	−175		10/100	20
ΔR_on,sp (%) = (dynamic R_on,sp / static R_on,sp − 1) × 100%.

DownLoad: CSV

Table 2. Structural parameters for devices with different p-NiO ring designs

	N (cm⁻³)	L (μm)	S (μm)	Number of rings
Device A1	1 × 10¹⁷	2	2	1
Device A2	1 × 10¹⁷	2	2	2
Device A3	1 × 10¹⁷	2	2	3
Device A4	1 × 10¹⁷	2	2	4
Device A1-1	3 × 10¹⁷	2	2	1
Device A1-2	3 × 10¹⁷	2	2	2
Device A1-3	3 × 10¹⁷	2	2	3
Device A1-4	3 × 10¹⁷	2	2	4
Device A2-1	5 × 10¹⁷	2	2	1
Device A2-2	5 × 10¹⁷	2	2	2
Device A2-3	5 × 10¹⁷	2	2	3
Device A2-4	5 × 10¹⁷	2	2	4
Device B1	5 × 10¹⁷	2	1	4
Device B2	5 × 10¹⁷	2	1.5	4
Device B3	5 × 10¹⁷	2	2	4
Device B4	5 × 10¹⁷	2	2.5	4
Device B5	5 × 10¹⁷	2	3	4
Device C1	5 × 10¹⁷	1	2	4
Device C2	5 × 10¹⁷	1.5	2	4
Device C3	5 × 10¹⁷	2	2	4
Device C4	5 × 10¹⁷	2.5	2	4
Device C5	5 × 10¹⁷	3	2	4

DownLoad: CSV

[1]	Teo K H, Zhang Y H, Chowdhury N, et al. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. J Appl Phys, 2021, 130(16): 160902 doi: 10.1063/5.0061555
[2]	Buffolo M, Favero D, Marcuzzi A, et al. Review and outlook on GaN and SiC power devices: Industrial state-of-the-art, applications, and perspectives. IEEE Trans Electron Devices, 2024, 71(3): 1344 doi: 10.1109/TED.2023.3346369
[3]	Zhou Q, Jin Y, Shi Y Y, et al. High reverse blocking and low onset voltage AlGaN/GaN-on-Si lateral power diode with MIS-gated hybrid anode. IEEE Electron Device Lett, 2015, 36(7): 660 doi: 10.1109/LED.2015.2432171
[4]	Tao M, Wang M J, Wen C P, et al. Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit. 2017 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD). Sapporo, Japan. IEEE, 2017: 93
[5]	Nela L, Yildirim H K, Erine C, et al. Conformal passivation of multi-channel GaN power transistors for reduced current collapse. IEEE Electron Device Lett, 2021, 42(1): 86 doi: 10.1109/LED.2020.3038808
[6]	Zhang T, Li R H, Lu J, et al. A 0.43 V/90 nA/mm lateral AlGaN/GaN Schottky barrier diode with plasma-free groove anode technique. IEEE Electron Device Lett, 2021, 42(12): 1747 doi: 10.1109/LED.2021.3123652
[7]	Wong M S, Lee C M, Myers D J, et al. Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation. Appl Phys Express, 2019, 12(9): 097004 doi: 10.7567/1882-0786/ab3949
[8]	Wang H Y, Mao W, Yang C, et al. Lateral AlGaN/GaN Schottky barrier diode with arrayed p-GaN islands termination. IEEE Trans Electron Devices, 2021, 68(12): 6046 doi: 10.1109/TED.2021.3118326
[9]	Soni A, Amogh K M, Shrivastava M. Design guidelines and performance tradeoffs in recessed AlGaN/GaN Schottky barrier diodes. IEEE Trans Electron Devices, 2020, 67(11): 4834 doi: 10.1109/TED.2020.3024354
[10]	Lee H S, Kalarickal N K, Rahman M W, et al. High-permittivity dielectric edge termination for vertical high voltage devices. J Comput Electron, 2020, 19(4): 1538 doi: 10.1007/s10825-020-01553-y
[11]	Wang Z Z, Huang F P, Chu C S, et al. 2.5 kV/1.95 GW/cm² AlGaN/GaN-based lateral Schottky barrier diodes with a high-k field plate to reduce reverse current. IEEE Trans Electron Devices, 2024, 71(6): 3811 doi: 10.1109/TED.2024.3388377
[12]	He J T, Wang Z Z, Huang F P, et al. Physical model development for fabricating MIS-anode-based 1100 V AlGaN/GaN-based lateral Schottky barrier diodes grown on silicon substrate with low leakage current. Adv Electron Mater, 2025, 11(13): 2500111 doi: 10.1002/aelm.202500111
[13]	Xu T, Tang Z Q, Zhou Z Y, et al. Simulation optimization of AlGaN/GaN SBD with field plate structures and recessed anode. Micromachines, 2023, 14(6): 1121 doi: 10.3390/mi14061121
[14]	Shi Y T, Ren F F, Xu W Z, et al. Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices. Sci Rep, 2019, 9: 8796 doi: 10.1038/s41598-019-45177-0
[15]	Guo H, Gong H H, Shao P F, et al. Over 1200 V normally-OFF p-NiO gated AlGaN/GaN HEMTs on Si with a small threshold voltage shift. IEEE Electron Device Lett, 2022, 43(2): 268 doi: 10.1109/LED.2021.3137510
[16]	Qin Y, Xiao M, Zhang R Z, et al. 1 kV GaN-on-Si quasi-vertical Schottky rectifier. IEEE Electron Device Lett, 2023, 44(7): 1052 doi: 10.1109/LED.2023.3282025
[17]	Huang F P, Chu C S, Wang Z Z, et al. GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect. Appl Phys Express, 2022, 15(8): 084001 doi: 10.35848/1882-0786/ac7eac
[18]	Khadar R A, Floriduz A, Wang T F, et al. P-NiO junction termination extensions for GaN power devices. Appl Phys Express, 2021, 14(7): 071006 doi: 10.35848/1882-0786/ac09ff
[19]	Li S C, Yang S, Han Z, et al. Vertical GaN Schottky barrier diode with hybrid P-NiO junction termination extension. IEEE J Electron Devices Soc, 2024, 12: 548 doi: 10.1109/JEDS.2024.3432783
[20]	Gong H H, Yu X X, Xu Y, et al. β-Ga₂O₃ vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings. Appl Phys Lett, 2021, 118(20): 202102 doi: 10.1063/5.0050919
[21]	Xiao M, Ma Y W, Du Z H, et al. First demonstration of vertical superjunction diode in GaN. 2022 International Electron Devices Meeting (IEDM). San Francisco, CA, USA. IEEE, 2022: 35.6. 1
[22]	Malik R R, Karthik S R, Joshi V, et al. Experimental validation of buffer traps-driven electric field dynamics governing breakdown and leakage trends in AlGaN/GaN heterostructures. 2025 IEEE International Reliability Physics Symposium (IRPS). Monterey, CA, USA. IEEE, 2025: P26. GaN
[23]	Wang Z Z, He J T, Huang F P, et al. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n⁺-GaN cap layer and local passivation layer to improve BFOM and dynamic properties. J Semicond, 2025, 46(9): 092502 doi: 10.1088/1674-4926/25010024
[24]	Wang Z Z, Huang F P, Chu C S, et al. On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes. Jpn J Appl Phys, 2023, 62(9): 094001 doi: 10.35848/1347-4065/acf17a
[25]	Rahman M W, Chandrasekar H, Razzak T, et al. Hybrid BaTiO₃/SiN_x/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance. Appl Phys Lett, 2021, 119: 013504 doi: 10.1063/5.0055946
[26]	Colón A, Douglas E A, Pope A J, et al. Demonstration of a 9 kV reverse breakdown and 59 mΩ-cm² specific on-resistance AlGaN/GaN Schottky barrier diode. Solid State Electron, 2019, 151: 47 doi: 10.1016/j.sse.2018.10.009
[27]	Zhang T, Zhang Y N, Li R H, et al. Current transport mechanism of AlGaN-channel Schottky barrier diode with extremely low leakage current and high blocking voltage of 2.55 kV. Appl Phys Lett, 2022, 120(9): 092102 doi: 10.1063/5.0077691
[28]	Deng S, Liu K, Wang C, et al. The influence of recessed floating metal rings structure on electrical properties of AlGaN/GaN Schottky barrier diodes. Phys Status Solidi A, 2022, 219(2): 2100502 doi: 10.1002/pssa.202100502
[29]	Lei J C, Wei J, Tang G F, et al. 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode. IEEE Electron Device Lett, 2018, 39(2): 260 doi: 10.1109/LED.2017.2783908
[30]	Zhu M D, Song B, Qi M, et al. 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon. IEEE Electron Device Lett, 2015, 36(4): 375 doi: 10.1109/LED.2015.2404309
[31]	Zhu L Y, Zhou Q, Yang X, et al. High-performance ultrathin-barrier AlGaN/GaN hybrid anode diode with Al₂O₃ gate dielectric and In situ Si₃N₄-cap passivation. IEEE Trans Electron Devices, 2020, 67(10): 4136 doi: 10.1109/TED.2020.3018416
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Received: 09 May 2026 Revised: 17 June 2026 Online: Accepted Manuscript: 30 July 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Jingting He, Zhizhong Wang, Wenjie Mi, Qiong Zhang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Haoyan Liu, Yonghui Zhang, Shuting Cai, Xiao Wei Sun, Zihui Zhang. 1.6 kV/ 1.47 GW·cm−2 AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26050011 ****J T He, Z Z Wang, W J Mi, Q Zhang, F P Huang, C S Chu, K K Tian, H Y Liu, Y H Zhang, S T Cai, X W Sun, and Z H Zhang, 1.6 kV/ 1.47 GW·cm−2 AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26050011

Citation:

J T He, Z Z Wang, W J Mi, Q Zhang, F P Huang, C S Chu, K K Tian, H Y Liu, Y H Zhang, S T Cai, X W Sun, and Z H Zhang, 1.6 kV/ 1.47 GW·cm⁻² AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26050011

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1.6 kV/ 1.47 GW·cm⁻² AlGaN/GaN-based Schottky barrier diodes grown on Si substrate with n-GaN/p-NiO/n-GaN lateral junctions

DOI: 10.1088/1674-4926/26050011

CSTR: 32376.14.1674-4926.26050011

1.
School of Integrated Circuits, Guangdong University of Technology, Guangzhou 510006, China
2.
School of Physics and Electronic Engineering, Shanxi University, Taiyuan, 030006, China
3.
State Key Laboratory of Reliability and Intelligence of Electrical Equipment and School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
4.
Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China

More Information

Jingting He received her bachelor’s and master’s degrees from China University of Petroleum in 2015 and 2018, respectively. She is currently a Ph.D. candidate at Guangdong University of Technology. Her research primarily focuses on the design and fabrication for gallium nitride power semiconductor devices
Zhizhong Wang received his Ph.D. from Hebei University of Technology. He is currently a faculty member at the School of Physics and Electronic Engineering, Shan Xi University. His research primarily focuses on the design and fabrication for gallium nitride power semiconductor devices
Zihui Zhang received his B. S. from Shandong University and Ph.D. from Nanyang Technological University. Before he joined Guangdong University of Technology as a Distinguished Professor, he was a Professor at Hebei University of Technology. He is also a “100-Talent-Plan” Distinguished Professor of Hebei Province. His research interests include III-nitride-based semiconductor materials and devices, semiconductor device physics, device modeling and simulation
Corresponding author: zh.zhang@hebut.edu.cn
Received Date: 2026-05-09
Revised Date: 2026-06-17

Available Online: 2026-07-30

Abstract

Abstract

AlGaN/GaN-based Schottky barrier diodes grown on Si substrates with n-GaN/p-NiO/n-GaN lateral junctions are proposed and fabricated. The n-GaN/p-NiO/n-GaN lateral junctions effectively extend the depletion region in the GaN drift layer. The more homogenized electric field reduces the electric field magnitude near both the Schottky contact and the field plate (FP) edge. Consequently, the fabricated lateral power device achieves a breakdown voltage (BV) of ~1.6 kV and yields a high Baliga’s figure of merit (BFOM) of ~1.47 GW·cm⁻². The n-GaN/p-NiO/n-GaN lateral junctions also contribute to suppressing the electron trapping effect and reducing the dynamic specific on-resistance (R_on,sp) by 1.5 times. With the developed physical models, we have also investigated the impact of different p-NiO designs on the blocking effect for the proposed device. We report that the n-GaN layer in the n-GaN/p-NiO/n-GaN lateral junctions shall be effectively depleted so that AlGaN/GaN-based Schottky barrier diodes with high BV can be achieved.
- AlGaN/GaN-based Schottky barrier diodes,
- power device,
- 2DEG

^§Jingting He and Zhizhong Wang contributed equally to this work and should be considered as co-first authors.

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