Ultrathin single-crystalline Bi<sub>2</sub>S<sub>3</sub> nanosheets for high-performance photodetectors

Jintao Gao; Hongyu Liu; Yue Zhang; Zhaoyu Pan; Huanghuang Cheng; Feng Zhuo; Peng Zhang; Songqing Hu; Xuegang Chen; Wenshuai Gao; Xue Liu; Yuxuan Jiang; Jingyue Wang

doi:10.1088/1674-4926/26060011

J. Semicond. > Just Accepted

ARTICLES

Ultrathin single-crystalline Bi₂S₃ nanosheets for high-performance photodetectors

Jintao Gao^{1, §}, Hongyu Liu^{2, §}, Yue Zhang^{2, §}, Zhaoyu Pan², Huanghuang Cheng³, Feng Zhuo³, Peng Zhang³, Songqing Hu², Xuegang Chen^{3, 4, 5}, Wenshuai Gao⁶, Xue Liu³, Yuxuan Jiang^{1, 3,} and Jingyue Wang^2,

+ Author Affiliations

1. School of Physics, Anhui University, Hefei 230601, P. R. China
2. Shandong Key Laboratory of Intelligent Energy Materials, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, P. R. China
3. Center of Free Electron and Laser and High Magnetic Fields, Anhui University, Hefei 230601, Anhui, P. R. China
4. State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei 230601, Anhui, P. R. China
5. Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei, 230601, Anhui, P. R. China
6. Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
^§Jintao Gao, Hongyu Liu, and Yue Zhang contributed equally to this work and should be considered as co-first authors.

Author Bio:

Jintao Gao received his B.S. degree from Anhui Jianzhu University in 2020. He is currently an M.S. student at Anhui University under the supervision of Prof. Yuxuan Jiang. His research focuses on condensed matter physics.

Hongyu Liu received his B.S. degree from China University of Petroleum (East China) in 2025. He is currently a master's student at China University of Petroleum (East China) under the supervision of Prof. Jingyue Wang. His research focuses on the preparation of two-dimensional materials.

Yue Zhang is currently an undergraduate student at China University of Petroleum (East China). His research focuses on two-dimensional materials and first-principles calculations.

Yuxuan Jiang received his B.S. degree in physics from Peking University and his Ph.D. degree in condensed matter physics from Georgia Institute of Technology. He was a Jack Crow Postdoctoral Fellow at the National High Magnetic Field Laboratory. He is currently a professor at the School of Physics, Anhui University. His research focuses on optical spectroscopy of quantum materials and nonlinear dynamics in NEMS/MEMS.

Jingyue Wang received his B.S. degree in physics from Shandong University in 2015 and his Ph.D. degree in condensed matter physics from Peking University in 2020. He was a joint-training student at Georgia Institute of Technology and a Boya Postdoctoral Fellow at Peking University. In 2024, he joined China University of Petroleum (East China) as a specially appointed professor. His research focuses on two-dimensional materials, chemical vapor synthesis, quantum properties, and semiconductor devices.

Corresponding author: Yuxuan Jiang, Yuxuan.Jiang@ahu.edu.cn; Jingyue Wang, jingyue_wang@upc.edu.cn

DOI: 10.1088/1674-4926/26060011CSTR: 32376.14.1674-4926.26060011

Abstract: Bismuth sulfide (Bi₂S₃), a widely studied photocatalytic material, has attracted increasing interest for optoelectronic applications because of its strong light absorption and suitable bandgap. However, the photoelectric properties of single-crystalline Bi₂S₃ remain insufficiently explored, mainly due to the difficulty in synthesizing high-quality ultrathin crystals suitable for device integration. Here, we report the low-pressure chemical vapor deposition (LPCVD) growth of ultrathin single-crystalline Bi₂S₃ nanosheets with thicknesses of approximately 40–60 nm and demonstrate high-performance gate-tunable photodetectors based on back-gated field-effect transistor (FET) devices. Under 630 nm illumination, the devices deliver a high responsivity of 67.36 A·W⁻¹, an external quantum efficiency (EQE) of 52618%, and a detectivity on the order of 10¹² Jones. These metrics outperform previously reported Bi₂S₃ photodetection devices and highlight the great potential of LPCVD-grown Bi₂S₃ for high-speed and high-sensitivity photodetection. Combined with its tunable bandgap and structural anisotropy, Bi₂S₃ represents a promising material platform for next-generation photodetectors, image sensors and integrated optoelectronic technologies.

Keywords: single-crystalline Bi₂S₃, two-dimensional photodetector, low-pressure chemical vapor deposition, field-effect transistor

References

[1]	Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7(11): 699.
[2]	Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96.
[3]	Koppens F H L, Mueller T, Avouris P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol, 2014, 9(10): 780. doi: 10.1038/nnano.2014.215
[4]	Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2(8): 17033.
[5]	Xu J Z, Li H N, Fang S F, et al. Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors. J Mater Chem C, 2020, 8(6): 2102.
[6]	Ajiboye T O, Onwudiwe D C. Bismuth sulfide based compounds: Properties, synthesis and applications. Results Chem, 2021, 3: 100151.
[7]	Chawla A, Sudhaik A, Sonu, et al. Bi₂S₃-based photocatalysts: Properties, synthesis, modification strategies, and mechanistic insights towards environmental sustainability and green energy technologies. Coord Chem Rev, 2025, 529: 216443. doi: 10.1016/j.ccr.2025.216443
[8]	Cheng J H, Feng W L, Yang X Z, et al. High-performance Bi₂S₃ photodetector based on oxygen-mediated defect engineering and its wafer-scale fast fabrication. J Colloid Interface Sci, 2025, 679: 373.
[9]	Liu C H, Chang Y C, Norris T B, et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat Nanotechnol, 2014, 9(4): 273.
[10]	Octon T J, Nagareddy V K, Russo S, et al. Fast high-responsivity few-layer MoTe₂ photodetectors. Adv Opt Mater, 2016, 4(11): 1750.
[11]	Nie C B, Yu L Y, Wei X Z, et al. Ultrafast growth of large-area monolayer MoS₂ film via gold foil assistant CVD for a highly sensitive photodetector. Nanotechnology, 2017, 28(27): 275203.
[12]	Chen X L, Lu X B, Deng B C, et al. Widely tunable black phosphorus mid-infrared photodetector. Nat Commun, 2017, 8: 1672.
[13]	Xu J, Song Y J, Park J H, et al. Graphene/black phosphorus heterostructured photodetector. Solid State Electron, 2018, 144: 86.
[14]	Veeralingam S, Badhulika S. Bi-Metallic sulphides 1D Bi₂S₃ microneedles/1D RuS2 nano-rods based n-n heterojunction for large area, flexible and high-performance broadband photodetector. J Alloys Compd, 2021, 885: 160954.
[15]	Konstantatos G, Levina L, Tang J, et al. Sensitive solution-processed Bi₂S₃ nanocrystalline photodetectors. Nano Lett, 2008, 8(11): 4002.
[16]	Rong P, Gao S Y, Ren S, et al. Large-area freestanding Bi₂S₃ nanofibrous membranes for fast photoresponse flexible IR imaging photodetector. Adv Funct Mater, 2023, 33(24): 2300159.
[17]	Huo N J, Figueroba A, Yang Y J, et al. Engineering vacancies in Bi₂S₃ yielding sub-bandgap photoresponse and highly sensitive short-wave infrared photodetectors. Adv Opt Mater, 2019, 7(11): 1900258.
[18]	Choi W, Choudhary N, Han G H, et al. Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today, 2017, 20(3): 116.
[19]	Zhao T G, Duan S J, et al. Edge-dominated epitaxy of topological insulator Bi2Se3 with ultrabroadband response. ACS Nano, 2025, 19(28): 26055.
[20]	Zhao T, Zhang Q, Xu T, et al. Broadband sensitivity enhancement in van der Waals photodetectors enabled by bathophenanthroline interlayers. Nat Commun, 2026, 17: 5893.
[21]	Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi₂Se₃ heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11(6): 2450.
[22]	Castellanos-Gomez A, Buscema M, Molenaar R, et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater, 2014, 1(1): 011002.
[23]	Wang D S, Hao C H, Zheng W, et al. Bi₂S₃ nanotubes: Facile synthesis and growth mechanism. Nano Res, 2009, 2(2): 130.
[24]	Rong P, Gao S Y, Li L, et al. Centimeter-scale and honeycomb-like bismuth sulfide film composed of triangular structural units for flexible photodetector. Adv Funct Mater, 2025, 35(6): 2415014.
[25]	Panwar V, Dey M, Sharma P, et al. Ultrahigh photo-responsivity and detectivity in 2D bismuth sulfide photodetector for vis–NIR radiation. Small, 2024, 20(30): 2309428.
[26]	Feng H F, Zhuang J C, Slattery A D, et al. Construction of 2D lateral pseudoheterostructures by strain engineering. 2D Mater, 2017, 4(2): 025102.
[27]	Gabor N M, Song J C W, Ma Q, et al. Hot carrier–assisted intrinsic photoresponse in graphene. Science, 2011, 334(6056): 648.
[28]	Wang Y H, Nie Z H, Wang F Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light Sci Appl, 2020, 9: 192.
[29]	Paul K K, Kim J H, Lee Y H. Hot carrier photovoltaics in van der Waals heterostructures. Nat Rev Phys, 2021, 3(3): 178.
[30]	Liu H L, Shen C C, Su S-H, et al. Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry. Appl Phys Lett, 2014, 105(20): 201905.
[31]	Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS₂. Nat Nanotechnol, 2013, 8(7): 497.
[32]	Schaller R D, Klimov V I. High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Phys Rev Lett, 2004, 92(18): 186601.
[33]	Che B, Cai Z Y, Xiao P, et al. Thermally driven point defect transformation in antimony selenosulfide photovoltaic materials. Adv Mater, 2023, 35(6): 2208564.
[34]	Kumar S S, Valanarasu S, Manthrammal M A, et al. Effect of coating temperature on the physical properties of Bi₂S₃thin films for photodetector applications. J Mater Sci Mater Electron, 2024, 35(3): 195.
[35]	Maria C C S, Patil R A, Hasibuan D P, et al. White-light photodetection enhancement and thin film impediment in Bi₂S₃ nanorods/thin-films homojunction photodetectors. Appl Surf Sci, 2022, 584: 152608.
[36]	Shkir M, Alshahrani T. Impact of Nd doping in Bi₂S₃ thin films coated by nebulizer spray pyrolysis technique for photodetector applications. Opt Mater, 2023, 140: 113837.
[37]	Zamani M, Jamali-Sheini F, Cheraghizade M. Visible-range and self-powered bilayer p-Si/n-Bi₂S₃ heterojunction photodetector: The effect of Au buffer layer on the optoelectronics performance. J Alloys Compd, 2022, 905: 164119.
[38]	Wang V, Xu N, Liu J-C, et al. VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code. Comput Phys Commun, 2021, 267: 108033.
[39]	Momma K, Izumi F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr, 2011, 44(6): 1272.

Fig. 1. (Color online) Growth and characterization of Bi₂S₃. (a) Schematic illustration of the orthorhombic chain-like atomic structure of Bi₂S₃. (b) Schematic illustration of the three-zone LPCVD system used for the growth of Bi₂S₃ crystals, where S and Bi₂O₃ powders serve as precursors and freshly exfoliated f-mica is used as the growth substrate. (c) SEM image of a single rectangular Bi₂S₃ crystal grown on f-mica. (d) Room-temperature Raman spectrum of Bi₂S₃ measured with a 532 nm excitation laser, showing the characteristic A_g and B_1g vibrational modes. (e) Tauc plot extracted from the UV-Vis-NIR absorption spectrum, yielding an optical bandgap of approximately 1.28 eV.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Structural characterization of Bi₂S₃nanosheet. (a) TEM image of an individual Bi₂S₃ nanosheet, showing its well-defined elongated morphology. The inset displays a magnified HRTEM image of the lattice fringes. (b) Atomic-resolution TEM image of Bi₂S₃, with the corresponding fast Fourier transform (FFT) pattern shown in the inset. The indexed diffraction spots can be assigned to the (020) and (102) planes, confirming the highly ordered orthorhombic crystal structure. (c) Comparison between the simulated XRD pattern derived from VASP and the experimental XRD pattern of Bi₂S₃. The good agreement between the two patterns verifies the phase purity and structural consistency of the synthesized crystals. (d) Enlarged XRD curve centered at 25°, showing a FWHM of 0.097°, indicative of high crystalline quality; the red dots represent the original measured data, and the black line corresponds to the Pseudo-Voigt fit (R² = 0.998850).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Device performance of the Bi₂S₃phototransistor. (a) Schematic illustration of the back-gated phototransistor. (b) Electronic band structure and density of states (DOS) calculated by first-principles VASP simulations. (c,d) Output characteristics under dark conditions and under 850 nm illumination at different gate voltages. (e) Linear transfer characteristics under dark and illuminated states. (f) Logarithmic transfer characteristics under dark and illuminated states. (g) Multi-cycle power-dependent photoresponse under 630 nm illumination, with the incident power varied from 3.585 nW to 71.7 nW at V_ds = 0.1 V. (h) Single-cycle temporal response under 630 nm illumination (3.585 nW) at V_ds = 0.1 V. (i) Stability, reproducibility, and high-speed periodic switching characteristics.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Photodetection metrics of the Bi₂S₃ phototransistor. (a) Photoresponsivity of the device as a function of incident light intensity under illumination wavelengths of 850, 630, 525, 405, 365, and 275 nm, measured at V_ds = 0.5 V and V_g = -25 V. (b) Specific detectivity (D*) as a function of incident light intensity at different excitation wavelengths under the same bias conditions. (c) External quantum efficiency (EQE) as a function of incident light intensity for different excitation wavelengths. (d) Benchmark plot of responsivity versus detectivity comparing this work with previously reported Bi₂S₃-based photodetectors fabricated by different methods, including Thermal Vapor Deposition (TVD), Nanoparticle Synthesis (NSP), Solution Combustion Thermal Annealing (SCTA), Chemical Aqueous Solution Crystallization (CASC), Physical Vapor Deposition (PVD) and Solvothermal routes, and operating in different spectral ranges, highlighting the competitive overall performance of the present device.

DownLoad: Full-Size Img PowerPoint

[1]	Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7(11): 699.
[2]	Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96.
[3]	Koppens F H L, Mueller T, Avouris P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol, 2014, 9(10): 780. doi: 10.1038/nnano.2014.215
[4]	Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2(8): 17033.
[5]	Xu J Z, Li H N, Fang S F, et al. Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors. J Mater Chem C, 2020, 8(6): 2102.
[6]	Ajiboye T O, Onwudiwe D C. Bismuth sulfide based compounds: Properties, synthesis and applications. Results Chem, 2021, 3: 100151.
[7]	Chawla A, Sudhaik A, Sonu, et al. Bi₂S₃-based photocatalysts: Properties, synthesis, modification strategies, and mechanistic insights towards environmental sustainability and green energy technologies. Coord Chem Rev, 2025, 529: 216443. doi: 10.1016/j.ccr.2025.216443
[8]	Cheng J H, Feng W L, Yang X Z, et al. High-performance Bi₂S₃ photodetector based on oxygen-mediated defect engineering and its wafer-scale fast fabrication. J Colloid Interface Sci, 2025, 679: 373.
[9]	Liu C H, Chang Y C, Norris T B, et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat Nanotechnol, 2014, 9(4): 273.
[10]	Octon T J, Nagareddy V K, Russo S, et al. Fast high-responsivity few-layer MoTe₂ photodetectors. Adv Opt Mater, 2016, 4(11): 1750.
[11]	Nie C B, Yu L Y, Wei X Z, et al. Ultrafast growth of large-area monolayer MoS₂ film via gold foil assistant CVD for a highly sensitive photodetector. Nanotechnology, 2017, 28(27): 275203.
[12]	Chen X L, Lu X B, Deng B C, et al. Widely tunable black phosphorus mid-infrared photodetector. Nat Commun, 2017, 8: 1672.
[13]	Xu J, Song Y J, Park J H, et al. Graphene/black phosphorus heterostructured photodetector. Solid State Electron, 2018, 144: 86.
[14]	Veeralingam S, Badhulika S. Bi-Metallic sulphides 1D Bi₂S₃ microneedles/1D RuS2 nano-rods based n-n heterojunction for large area, flexible and high-performance broadband photodetector. J Alloys Compd, 2021, 885: 160954.
[15]	Konstantatos G, Levina L, Tang J, et al. Sensitive solution-processed Bi₂S₃ nanocrystalline photodetectors. Nano Lett, 2008, 8(11): 4002.
[16]	Rong P, Gao S Y, Ren S, et al. Large-area freestanding Bi₂S₃ nanofibrous membranes for fast photoresponse flexible IR imaging photodetector. Adv Funct Mater, 2023, 33(24): 2300159.
[17]	Huo N J, Figueroba A, Yang Y J, et al. Engineering vacancies in Bi₂S₃ yielding sub-bandgap photoresponse and highly sensitive short-wave infrared photodetectors. Adv Opt Mater, 2019, 7(11): 1900258.
[18]	Choi W, Choudhary N, Han G H, et al. Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today, 2017, 20(3): 116.
[19]	Zhao T G, Duan S J, et al. Edge-dominated epitaxy of topological insulator Bi2Se3 with ultrabroadband response. ACS Nano, 2025, 19(28): 26055.
[20]	Zhao T, Zhang Q, Xu T, et al. Broadband sensitivity enhancement in van der Waals photodetectors enabled by bathophenanthroline interlayers. Nat Commun, 2026, 17: 5893.
[21]	Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi₂Se₃ heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11(6): 2450.
[22]	Castellanos-Gomez A, Buscema M, Molenaar R, et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater, 2014, 1(1): 011002.
[23]	Wang D S, Hao C H, Zheng W, et al. Bi₂S₃ nanotubes: Facile synthesis and growth mechanism. Nano Res, 2009, 2(2): 130.
[24]	Rong P, Gao S Y, Li L, et al. Centimeter-scale and honeycomb-like bismuth sulfide film composed of triangular structural units for flexible photodetector. Adv Funct Mater, 2025, 35(6): 2415014.
[25]	Panwar V, Dey M, Sharma P, et al. Ultrahigh photo-responsivity and detectivity in 2D bismuth sulfide photodetector for vis–NIR radiation. Small, 2024, 20(30): 2309428.
[26]	Feng H F, Zhuang J C, Slattery A D, et al. Construction of 2D lateral pseudoheterostructures by strain engineering. 2D Mater, 2017, 4(2): 025102.
[27]	Gabor N M, Song J C W, Ma Q, et al. Hot carrier–assisted intrinsic photoresponse in graphene. Science, 2011, 334(6056): 648.
[28]	Wang Y H, Nie Z H, Wang F Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light Sci Appl, 2020, 9: 192.
[29]	Paul K K, Kim J H, Lee Y H. Hot carrier photovoltaics in van der Waals heterostructures. Nat Rev Phys, 2021, 3(3): 178.
[30]	Liu H L, Shen C C, Su S-H, et al. Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry. Appl Phys Lett, 2014, 105(20): 201905.
[31]	Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS₂. Nat Nanotechnol, 2013, 8(7): 497.
[32]	Schaller R D, Klimov V I. High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Phys Rev Lett, 2004, 92(18): 186601.
[33]	Che B, Cai Z Y, Xiao P, et al. Thermally driven point defect transformation in antimony selenosulfide photovoltaic materials. Adv Mater, 2023, 35(6): 2208564.
[34]	Kumar S S, Valanarasu S, Manthrammal M A, et al. Effect of coating temperature on the physical properties of Bi₂S₃thin films for photodetector applications. J Mater Sci Mater Electron, 2024, 35(3): 195.
[35]	Maria C C S, Patil R A, Hasibuan D P, et al. White-light photodetection enhancement and thin film impediment in Bi₂S₃ nanorods/thin-films homojunction photodetectors. Appl Surf Sci, 2022, 584: 152608.
[36]	Shkir M, Alshahrani T. Impact of Nd doping in Bi₂S₃ thin films coated by nebulizer spray pyrolysis technique for photodetector applications. Opt Mater, 2023, 140: 113837.
[37]	Zamani M, Jamali-Sheini F, Cheraghizade M. Visible-range and self-powered bilayer p-Si/n-Bi₂S₃ heterojunction photodetector: The effect of Au buffer layer on the optoelectronics performance. J Alloys Compd, 2022, 905: 164119.
[38]	Wang V, Xu N, Liu J-C, et al. VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code. Comput Phys Commun, 2021, 267: 108033.
[39]	Momma K, Izumi F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr, 2011, 44(6): 1272.

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Received: 05 June 2026 Revised: 09 August 2026 Online: Accepted Manuscript: 11 September 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Jintao Gao, Hongyu Liu, Yue Zhang, Zhaoyu Pan, Huanghuang Cheng, Feng Zhuo, Peng Zhang, Songqing Hu, Xuegang Chen, Wenshuai Gao, Xue Liu, Yuxuan Jiang, Jingyue Wang. Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060011 ****J T Gao, H Y Liu, Y Zhang, Z Y Pan, H H Cheng, F Zhuo, P Zhang, S Q Hu, X G Chen, W S Gao, X Liu, Y X Jiang, and J Y Wang, Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060011

Citation:

J T Gao, H Y Liu, Y Zhang, Z Y Pan, H H Cheng, F Zhuo, P Zhang, S Q Hu, X G Chen, W S Gao, X Liu, Y X Jiang, and J Y Wang, Ultrathin single-crystalline Bi₂S₃ nanosheets for high-performance photodetectors[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060011

Citation:

PDF( 5930 KB)

Ultrathin single-crystalline Bi₂S₃ nanosheets for high-performance photodetectors

DOI: 10.1088/1674-4926/26060011

CSTR: 32376.14.1674-4926.26060011

Jintao Gao^{1, §},
Hongyu Liu^{2, §},
Yue Zhang^{2, §},
Zhaoyu Pan²,
Huanghuang Cheng³,
Feng Zhuo³,
Peng Zhang³,
Songqing Hu²,
Xuegang Chen^{3, 4, 5},
Wenshuai Gao⁶,
Xue Liu³,
Yuxuan Jiang^{1, 3,},
Jingyue Wang^2,

1.
School of Physics, Anhui University, Hefei 230601, P. R. China
2.
Shandong Key Laboratory of Intelligent Energy Materials, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, P. R. China
3.
Center of Free Electron and Laser and High Magnetic Fields, Anhui University, Hefei 230601, Anhui, P. R. China
4.
State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei 230601, Anhui, P. R. China
5.
Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei, 230601, Anhui, P. R. China
6.
Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

More Information

Jintao Gao received his B.S. degree from Anhui Jianzhu University in 2020. He is currently an M.S. student at Anhui University under the supervision of Prof. Yuxuan Jiang. His research focuses on condensed matter physics
Hongyu Liu received his B.S. degree from China University of Petroleum (East China) in 2025. He is currently a master's student at China University of Petroleum (East China) under the supervision of Prof. Jingyue Wang. His research focuses on the preparation of two-dimensional materials
Yue Zhang is currently an undergraduate student at China University of Petroleum (East China). His research focuses on two-dimensional materials and first-principles calculations
Yuxuan Jiang received his B.S. degree in physics from Peking University and his Ph.D. degree in condensed matter physics from Georgia Institute of Technology. He was a Jack Crow Postdoctoral Fellow at the National High Magnetic Field Laboratory. He is currently a professor at the School of Physics, Anhui University. His research focuses on optical spectroscopy of quantum materials and nonlinear dynamics in NEMS/MEMS
Jingyue Wang received his B.S. degree in physics from Shandong University in 2015 and his Ph.D. degree in condensed matter physics from Peking University in 2020. He was a joint-training student at Georgia Institute of Technology and a Boya Postdoctoral Fellow at Peking University. In 2024, he joined China University of Petroleum (East China) as a specially appointed professor. His research focuses on two-dimensional materials, chemical vapor synthesis, quantum properties, and semiconductor devices
Corresponding author: Yuxuan.Jiang@ahu.edu.cn; jingyue_wang@upc.edu.cn
Received Date: 2026-06-05
Revised Date: 2026-08-09

Available Online: 2026-09-11

Abstract

Abstract

Bismuth sulfide (Bi₂S₃), a widely studied photocatalytic material, has attracted increasing interest for optoelectronic applications because of its strong light absorption and suitable bandgap. However, the photoelectric properties of single-crystalline Bi₂S₃ remain insufficiently explored, mainly due to the difficulty in synthesizing high-quality ultrathin crystals suitable for device integration. Here, we report the low-pressure chemical vapor deposition (LPCVD) growth of ultrathin single-crystalline Bi₂S₃ nanosheets with thicknesses of approximately 40–60 nm and demonstrate high-performance gate-tunable photodetectors based on back-gated field-effect transistor (FET) devices. Under 630 nm illumination, the devices deliver a high responsivity of 67.36 A·W⁻¹, an external quantum efficiency (EQE) of 52618%, and a detectivity on the order of 10¹² Jones. These metrics outperform previously reported Bi₂S₃ photodetection devices and highlight the great potential of LPCVD-grown Bi₂S₃ for high-speed and high-sensitivity photodetection. Combined with its tunable bandgap and structural anisotropy, Bi₂S₃ represents a promising material platform for next-generation photodetectors, image sensors and integrated optoelectronic technologies.
- single-crystalline Bi₂S₃,
- two-dimensional photodetector,
- low-pressure chemical vapor deposition,
- field-effect transistor

Supplementary materials to this article can be found online at https://doi.org/10.1088/1674-4926/26060011.
^§Jintao Gao, Hongyu Liu, and Yue Zhang contributed equally to this work and should be considered as co-first authors.

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