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Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors

Jintao Gao1, §, Hongyu Liu2, §, Yue Zhang2, §, Zhaoyu Pan2, Huanghuang Cheng3, Feng Zhuo3, Peng Zhang3, Songqing Hu2, Xuegang Chen3, 4, 5, Wenshuai Gao6, Xue Liu3, Yuxuan Jiang1, 3, and Jingyue Wang2,

+ Author Affiliations

 Corresponding author: Yuxuan Jiang, Yuxuan.Jiang@ahu.edu.cn; Jingyue Wang, jingyue_wang@upc.edu.cn

DOI: 10.1088/1674-4926/26060011CSTR: 32376.14.1674-4926.26060011

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Abstract: Bismuth sulfide (Bi2S3), a widely studied photocatalytic material, has attracted increasing interest for optoelectronic applications because of its strong light absorption and suitable bandgap. However, the photoelectric properties of single-crystalline Bi2S3 remain insufficiently explored, mainly due to the difficulty in synthesizing high-quality ultrathin crystals suitable for device integration. Here, we report the low-pressure chemical vapor deposition (LPCVD) growth of ultrathin single-crystalline Bi2S3 nanosheets with thicknesses of approximately 40–60 nm and demonstrate high-performance gate-tunable photodetectors based on back-gated field-effect transistor (FET) devices. Under 630 nm illumination, the devices deliver a high responsivity of 67.36 A·W−1, an external quantum efficiency (EQE) of 52618%, and a detectivity on the order of 1012 Jones. These metrics outperform previously reported Bi2S3 photodetection devices and highlight the great potential of LPCVD-grown Bi2S3 for high-speed and high-sensitivity photodetection. Combined with its tunable bandgap and structural anisotropy, Bi2S3 represents a promising material platform for next-generation photodetectors, image sensors and integrated optoelectronic technologies.

Keywords: single-crystalline Bi2S3, two-dimensional photodetector, low-pressure chemical vapor deposition, field-effect transistor



[1]
Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7(11): 699 doi: 10.1038/nnano.2012.193
[2]
Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96 doi: 10.1038/s41928-024-01117-z
[3]
Koppens F H L, Mueller T, Avouris P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol, 2014, 9(10): 780 doi: 10.1038/nnano.2014.215
[4]
Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2(8): 17033 doi: 10.1038/natrevmats.2017.33
[5]
Xu J Z, Li H N, Fang S F, et al. Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors. J Mater Chem C, 2020, 8(6): 2102 doi: 10.1039/C9TC06780A
[6]
Ajiboye T O, Onwudiwe D C. Bismuth sulfide based compounds: Properties, synthesis and applications. Results Chem, 2021, 3: 100151 doi: 10.1016/j.rechem.2021.100151
[7]
Chawla A, Sudhaik A, Sonu, et al. Bi2S3-based photocatalysts: Properties, synthesis, modification strategies, and mechanistic insights towards environmental sustainability and green energy technologies. Coord Chem Rev, 2025, 529: 216443 doi: 10.1016/j.ccr.2025.216443
[8]
Cheng J H, Feng W L, Yang X Z, et al. High-performance Bi2S3 photodetector based on oxygen-mediated defect engineering and its wafer-scale fast fabrication. J Colloid Interface Sci, 2025, 679: 373 doi: 10.1016/j.jcis.2024.10.125
[9]
Liu C H, Chang Y C, Norris T B, et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat Nanotechnol, 2014, 9(4): 273 doi: 10.1038/nnano.2014.31
[10]
Octon T J, Nagareddy V K, Russo S, et al. Fast high-responsivity few-layer MoTe2 photodetectors. Adv Opt Mater, 2016, 4(11): 1750 doi: 10.1002/adom.201600290
[11]
Nie C B, Yu L Y, Wei X Z, et al. Ultrafast growth of large-area monolayer MoS2 film via gold foil assistant CVD for a highly sensitive photodetector. Nanotechnology, 2017, 28(27): 275203 doi: 10.1088/1361-6528/aa7473
[12]
Chen X L, Lu X B, Deng B C, et al. Widely tunable black phosphorus mid-infrared photodetector. Nat Commun, 2017, 8: 1672 doi: 10.1038/s41467-017-01978-3
[13]
Xu J, Song Y J, Park J H, et al. Graphene/black phosphorus heterostructured photodetector. Solid State Electron, 2018, 144: 86 doi: 10.1016/j.sse.2018.03.007
[14]
Veeralingam S, Badhulika S. Bi-Metallic sulphides 1D Bi2S3 microneedles/1D RuS2 nano-rods based n-n heterojunction for large area, flexible and high-performance broadband photodetector. J Alloys Compd, 2021, 885: 160954 doi: 10.1016/j.jallcom.2021.160954
[15]
Konstantatos G, Levina L, Tang J, et al. Sensitive solution-processed Bi2S3 nanocrystalline photodetectors. Nano Lett, 2008, 8(11): 4002 doi: 10.1021/nl802600z
[16]
Rong P, Gao S Y, Ren S, et al. Large-area freestanding Bi2S3 nanofibrous membranes for fast photoresponse flexible IR imaging photodetector. Adv Funct Mater, 2023, 33(24): 2300159 doi: 10.1002/adfm.202300159
[17]
Huo N J, Figueroba A, Yang Y J, et al. Engineering vacancies in Bi2S3 yielding sub-bandgap photoresponse and highly sensitive short-wave infrared photodetectors. Adv Opt Mater, 2019, 7(11): 1900258 doi: 10.1002/adom.201900258
[18]
Choi W, Choudhary N, Han G H, et al. Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today, 2017, 20(3): 116 doi: 10.1016/j.mattod.2016.10.002
[19]
Zhao T G, Duan S J, Dou W Z, et al. Edge-dominated epitaxy of topological insulator Bi2Se3 with ultrabroadband response. ACS Nano, 2025, 19(28): 26055 doi: 10.1021/acsnano.5c06699
[20]
Zhao T, Zhang Q, Xu T, et al. Broadband sensitivity enhancement in van der Waals photodetectors enabled by bathophenanthroline interlayers. Nat Commun, 2026, 17: 5893 doi: 10.1038/s41467-026-72603-5
[21]
Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi2Se3 heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11(6): 2450 doi: 10.1021/acsphotonics.4c00347
[22]
Castellanos-Gomez A, Buscema M, Molenaar R, et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater, 2014, 1(1): 011002
[23]
Wang V, Xu N, Liu J C, et al. VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code. Comput Phys Commun, 2021, 267: 108033 doi: 10.1016/j.cpc.2021.108033
[24]
Momma K, Izumi F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr, 2011, 44(6): 1272 doi: 10.1107/S0021889811038970
[25]
Wang D S, Hao C H, Zheng W, et al. Bi2S3 nanotubes: Facile synthesis and growth mechanism. Nano Res, 2009, 2(2): 130 doi: 10.1007/s12274-009-9010-2
[26]
Rong P, Gao S Y, Li L, et al. Centimeter-scale and honeycomb-like bismuth sulfide film composed of triangular structural units for flexible photodetector. Adv Funct Mater, 2025, 35(6): 2415014 doi: 10.1002/adfm.202415014
[27]
Panwar V, Dey M, Sharma P, et al. Ultrahigh photo-responsivity and detectivity in 2D bismuth sulfide photodetector for vis–NIR radiation. Small, 2024, 20(30): 2309428 doi: 10.1002/smll.202309428
[28]
Feng H F, Zhuang J C, Slattery A D, et al. Construction of 2D lateral pseudoheterostructures by strain engineering. 2D Mater, 2017, 4(2): 025102 doi: 10.1088/2053-1583/aa7100
[29]
Gabor N M, Song J C W, Ma Q, et al. Hot carrier–assisted intrinsic photoresponse in graphene. Science, 2011, 334(6056): 648 doi: 10.1126/science.1211384
[30]
Wang Y H, Nie Z H, Wang F Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light Sci Appl, 2020, 9: 192 doi: 10.1038/s41377-020-00430-4
[31]
Paul K K, Kim J H, Lee Y H. Hot carrier photovoltaics in van der Waals heterostructures. Nat Rev Phys, 2021, 3(3): 178 doi: 10.1038/s42254-020-00272-4
[32]
Liu H L, Shen C C, Su S H, et al. Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry. Appl Phys Lett, 2014, 105(20): 201905 doi: 10.1063/1.4901836
[33]
Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 2013, 8(7): 497 doi: 10.1038/nnano.2013.100
[34]
Schaller R D, Klimov V I. High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Phys Rev Lett, 2004, 92(18): 186601 doi: 10.1103/PhysRevLett.92.186601
[35]
Che B, Cai Z Y, Xiao P, et al. Thermally driven point defect transformation in antimony selenosulfide photovoltaic materials. Adv Mater, 2023, 35(6): 2208564 doi: 10.1002/adma.202208564
[36]
Kumar S S, Valanarasu S, Manthrammal M A, et al. Effect of coating temperature on the physical properties of Bi2S3thin films for photodetector applications. J Mater Sci Mater Electron, 2024, 35(3): 195 doi: 10.1007/s10854-023-11820-w
[37]
Maria C C S, Patil R A, Hasibuan D P, et al. White-light photodetection enhancement and thin film impediment in Bi2S3 nanorods/thin-films homojunction photodetectors. Appl Surf Sci, 2022, 584: 152608 doi: 10.1016/j.apsusc.2022.152608
[38]
Shkir M, Alshahrani T. Impact of Nd doping in Bi2S3 thin films coated by nebulizer spray pyrolysis technique for photodetector applications. Opt Mater, 2023, 140: 113837 doi: 10.1016/j.optmat.2023.113837
[39]
Zamani M, Jamali-Sheini F, Cheraghizade M. Visible-range and self-powered bilayer p-Si/n-Bi2S3 heterojunction photodetector: The effect of Au buffer layer on the optoelectronics performance. J Alloys Compd, 2022, 905: 164119 doi: 10.1016/j.jallcom.2022.164119
Fig. 1.  (Color online) Growth and characterization of Bi2S3. (a) Schematic illustration of the orthorhombic chain-like atomic structure of Bi2S3. (b) Schematic illustration of the three-zone LPCVD system used for the growth of Bi2S3 crystals, where S and Bi2O3 powders serve as precursors and freshly exfoliated f-mica is used as the growth substrate. (c) SEM image of a single rectangular Bi2S3 crystal grown on f-mica. (d) Room-temperature Raman spectrum of Bi2S3 measured with a 532 nm excitation laser, showing the characteristic Ag and B1g vibrational modes. (e) Tauc plot extracted from the UV−Vis−NIR absorption spectrum, yielding an optical bandgap of approximately 1.28 eV.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) Structural characterization of Bi2S3 nanosheet. (a) TEM image of an individual Bi2S3 nanosheet, showing its well-defined elongated morphology. The inset displays a magnified HRTEM image of the lattice fringes. (b) Atomic-resolution TEM image of Bi2S3, with the corresponding fast Fourier transform (FFT) pattern shown in the inset. The indexed diffraction spots can be assigned to the (020) and (102) planes, confirming the highly ordered orthorhombic crystal structure. (c) Comparison between the simulated XRD pattern derived from VASP and the experimental XRD pattern of Bi2S3. The good agreement between the two patterns verifies the phase purity and structural consistency of the synthesized crystals. (d) Enlarged XRD curve centered at 25°, showing a FWHM of 0.097°, indicative of high crystalline quality; the red dots represent the original measured data, and the black line corresponds to the Pseudo−Voigt fit (R2 = 0.998850).

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Device performance of the Bi2S3 phototransistor. (a) Schematic illustration of the back-gated phototransistor. (b) Electronic band structure and density of states (DOS) calculated by first-principles VASP simulations. (c,d) Output characteristics under dark conditions and under 850 nm illumination at different gate voltages. (e) Linear transfer characteristics under dark and illuminated states. (f) Logarithmic transfer characteristics under dark and illuminated states. (g) Multi-cycle power-dependent photoresponse under 630 nm illumination, with the incident power varied from 3.585 nW to 71.7 nW at Vds = 0.1 V. (h) Single-cycle temporal response under 630 nm illumination (3.585 nW) at Vds = 0.1 V. (i) Stability, reproducibility, and high-speed periodic switching characteristics.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) Photodetection metrics of the Bi2S3 phototransistor. (a) Photoresponsivity of the device as a function of incident light intensity under illumination wavelengths of 850, 630, 525, 405, 365, and 275 nm, measured at Vds = 0.5 V and Vg = −25 V. (b) Specific detectivity (D*) as a function of incident light intensity at different excitation wavelengths under the same bias conditions. (c) External quantum efficiency (EQE) as a function of incident light intensity for different excitation wavelengths. (d) Benchmark plot of responsivity versus detectivity comparing this work with previously reported Bi2S3-based photodetectors fabricated by different methods, including thermal vapor deposition (TVD), nanoparticle synthesis (NSP), solution combustion thermal annealing (SCTA), chemical aqueous solution crystallization (CASC), physical vapor deposition (PVD) and solvothermal routes, and operating in different spectral ranges, highlighting the competitive overall performance of the present device.

DownLoad: Full-Size Img PowerPoint
[1]
Wang Q H, Kalantar-Zadeh K, Kis A, et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 2012, 7(11): 699 doi: 10.1038/nnano.2012.193
[2]
Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96 doi: 10.1038/s41928-024-01117-z
[3]
Koppens F H L, Mueller T, Avouris P, et al. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol, 2014, 9(10): 780 doi: 10.1038/nnano.2014.215
[4]
Manzeli S, Ovchinnikov D, Pasquier D, et al. 2D transition metal dichalcogenides. Nat Rev Mater, 2017, 2(8): 17033 doi: 10.1038/natrevmats.2017.33
[5]
Xu J Z, Li H N, Fang S F, et al. Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors. J Mater Chem C, 2020, 8(6): 2102 doi: 10.1039/C9TC06780A
[6]
Ajiboye T O, Onwudiwe D C. Bismuth sulfide based compounds: Properties, synthesis and applications. Results Chem, 2021, 3: 100151 doi: 10.1016/j.rechem.2021.100151
[7]
Chawla A, Sudhaik A, Sonu, et al. Bi2S3-based photocatalysts: Properties, synthesis, modification strategies, and mechanistic insights towards environmental sustainability and green energy technologies. Coord Chem Rev, 2025, 529: 216443 doi: 10.1016/j.ccr.2025.216443
[8]
Cheng J H, Feng W L, Yang X Z, et al. High-performance Bi2S3 photodetector based on oxygen-mediated defect engineering and its wafer-scale fast fabrication. J Colloid Interface Sci, 2025, 679: 373 doi: 10.1016/j.jcis.2024.10.125
[9]
Liu C H, Chang Y C, Norris T B, et al. Graphene photodetectors with ultra-broadband and high responsivity at room temperature. Nat Nanotechnol, 2014, 9(4): 273 doi: 10.1038/nnano.2014.31
[10]
Octon T J, Nagareddy V K, Russo S, et al. Fast high-responsivity few-layer MoTe2 photodetectors. Adv Opt Mater, 2016, 4(11): 1750 doi: 10.1002/adom.201600290
[11]
Nie C B, Yu L Y, Wei X Z, et al. Ultrafast growth of large-area monolayer MoS2 film via gold foil assistant CVD for a highly sensitive photodetector. Nanotechnology, 2017, 28(27): 275203 doi: 10.1088/1361-6528/aa7473
[12]
Chen X L, Lu X B, Deng B C, et al. Widely tunable black phosphorus mid-infrared photodetector. Nat Commun, 2017, 8: 1672 doi: 10.1038/s41467-017-01978-3
[13]
Xu J, Song Y J, Park J H, et al. Graphene/black phosphorus heterostructured photodetector. Solid State Electron, 2018, 144: 86 doi: 10.1016/j.sse.2018.03.007
[14]
Veeralingam S, Badhulika S. Bi-Metallic sulphides 1D Bi2S3 microneedles/1D RuS2 nano-rods based n-n heterojunction for large area, flexible and high-performance broadband photodetector. J Alloys Compd, 2021, 885: 160954 doi: 10.1016/j.jallcom.2021.160954
[15]
Konstantatos G, Levina L, Tang J, et al. Sensitive solution-processed Bi2S3 nanocrystalline photodetectors. Nano Lett, 2008, 8(11): 4002 doi: 10.1021/nl802600z
[16]
Rong P, Gao S Y, Ren S, et al. Large-area freestanding Bi2S3 nanofibrous membranes for fast photoresponse flexible IR imaging photodetector. Adv Funct Mater, 2023, 33(24): 2300159 doi: 10.1002/adfm.202300159
[17]
Huo N J, Figueroba A, Yang Y J, et al. Engineering vacancies in Bi2S3 yielding sub-bandgap photoresponse and highly sensitive short-wave infrared photodetectors. Adv Opt Mater, 2019, 7(11): 1900258 doi: 10.1002/adom.201900258
[18]
Choi W, Choudhary N, Han G H, et al. Recent development of two-dimensional transition metal dichalcogenides and their applications. Mater Today, 2017, 20(3): 116 doi: 10.1016/j.mattod.2016.10.002
[19]
Zhao T G, Duan S J, Dou W Z, et al. Edge-dominated epitaxy of topological insulator Bi2Se3 with ultrabroadband response. ACS Nano, 2025, 19(28): 26055 doi: 10.1021/acsnano.5c06699
[20]
Zhao T, Zhang Q, Xu T, et al. Broadband sensitivity enhancement in van der Waals photodetectors enabled by bathophenanthroline interlayers. Nat Commun, 2026, 17: 5893 doi: 10.1038/s41467-026-72603-5
[21]
Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi2Se3 heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11(6): 2450 doi: 10.1021/acsphotonics.4c00347
[22]
Castellanos-Gomez A, Buscema M, Molenaar R, et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater, 2014, 1(1): 011002
[23]
Wang V, Xu N, Liu J C, et al. VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code. Comput Phys Commun, 2021, 267: 108033 doi: 10.1016/j.cpc.2021.108033
[24]
Momma K, Izumi F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J Appl Crystallogr, 2011, 44(6): 1272 doi: 10.1107/S0021889811038970
[25]
Wang D S, Hao C H, Zheng W, et al. Bi2S3 nanotubes: Facile synthesis and growth mechanism. Nano Res, 2009, 2(2): 130 doi: 10.1007/s12274-009-9010-2
[26]
Rong P, Gao S Y, Li L, et al. Centimeter-scale and honeycomb-like bismuth sulfide film composed of triangular structural units for flexible photodetector. Adv Funct Mater, 2025, 35(6): 2415014 doi: 10.1002/adfm.202415014
[27]
Panwar V, Dey M, Sharma P, et al. Ultrahigh photo-responsivity and detectivity in 2D bismuth sulfide photodetector for vis–NIR radiation. Small, 2024, 20(30): 2309428 doi: 10.1002/smll.202309428
[28]
Feng H F, Zhuang J C, Slattery A D, et al. Construction of 2D lateral pseudoheterostructures by strain engineering. 2D Mater, 2017, 4(2): 025102 doi: 10.1088/2053-1583/aa7100
[29]
Gabor N M, Song J C W, Ma Q, et al. Hot carrier–assisted intrinsic photoresponse in graphene. Science, 2011, 334(6056): 648 doi: 10.1126/science.1211384
[30]
Wang Y H, Nie Z H, Wang F Q. Modulation of photocarrier relaxation dynamics in two-dimensional semiconductors. Light Sci Appl, 2020, 9: 192 doi: 10.1038/s41377-020-00430-4
[31]
Paul K K, Kim J H, Lee Y H. Hot carrier photovoltaics in van der Waals heterostructures. Nat Rev Phys, 2021, 3(3): 178 doi: 10.1038/s42254-020-00272-4
[32]
Liu H L, Shen C C, Su S H, et al. Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry. Appl Phys Lett, 2014, 105(20): 201905 doi: 10.1063/1.4901836
[33]
Lopez-Sanchez O, Lembke D, Kayci M, et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 2013, 8(7): 497 doi: 10.1038/nnano.2013.100
[34]
Schaller R D, Klimov V I. High efficiency carrier multiplication in PbSe nanocrystals: Implications for solar energy conversion. Phys Rev Lett, 2004, 92(18): 186601 doi: 10.1103/PhysRevLett.92.186601
[35]
Che B, Cai Z Y, Xiao P, et al. Thermally driven point defect transformation in antimony selenosulfide photovoltaic materials. Adv Mater, 2023, 35(6): 2208564 doi: 10.1002/adma.202208564
[36]
Kumar S S, Valanarasu S, Manthrammal M A, et al. Effect of coating temperature on the physical properties of Bi2S3thin films for photodetector applications. J Mater Sci Mater Electron, 2024, 35(3): 195 doi: 10.1007/s10854-023-11820-w
[37]
Maria C C S, Patil R A, Hasibuan D P, et al. White-light photodetection enhancement and thin film impediment in Bi2S3 nanorods/thin-films homojunction photodetectors. Appl Surf Sci, 2022, 584: 152608 doi: 10.1016/j.apsusc.2022.152608
[38]
Shkir M, Alshahrani T. Impact of Nd doping in Bi2S3 thin films coated by nebulizer spray pyrolysis technique for photodetector applications. Opt Mater, 2023, 140: 113837 doi: 10.1016/j.optmat.2023.113837
[39]
Zamani M, Jamali-Sheini F, Cheraghizade M. Visible-range and self-powered bilayer p-Si/n-Bi2S3 heterojunction photodetector: The effect of Au buffer layer on the optoelectronics performance. J Alloys Compd, 2022, 905: 164119 doi: 10.1016/j.jallcom.2022.164119

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    Received: 05 June 2026 Revised: 09 August 2026 Online: Accepted Manuscript: 11 September 2026Uncorrected proof: 15 September 2026

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      Jintao Gao, Hongyu Liu, Yue Zhang, Zhaoyu Pan, Huanghuang Cheng, Feng Zhuo, Peng Zhang, Songqing Hu, Xuegang Chen, Wenshuai Gao, Xue Liu, Yuxuan Jiang, Jingyue Wang. Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060011 ****J T Gao, H Y Liu, Y Zhang, Z Y Pan, H H Cheng, F Zhuo, P Zhang, S Q Hu, X G Chen, W S Gao, X Liu, Y X Jiang, and J Y Wang, Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. J. Semicond., 2026, 47(10): 102703 doi: 10.1088/1674-4926/26060011
      Citation:
      Jintao Gao, Hongyu Liu, Yue Zhang, Zhaoyu Pan, Huanghuang Cheng, Feng Zhuo, Peng Zhang, Songqing Hu, Xuegang Chen, Wenshuai Gao, Xue Liu, Yuxuan Jiang, Jingyue Wang. Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060011 ****
      J T Gao, H Y Liu, Y Zhang, Z Y Pan, H H Cheng, F Zhuo, P Zhang, S Q Hu, X G Chen, W S Gao, X Liu, Y X Jiang, and J Y Wang, Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors[J]. J. Semicond., 2026, 47(10): 102703 doi: 10.1088/1674-4926/26060011
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      Ultrathin single-crystalline Bi2S3 nanosheets for high-performance photodetectors

      DOI: 10.1088/1674-4926/26060011
      CSTR: 32376.14.1674-4926.26060011
      • 1.

        School of Physics, Anhui University, Hefei 230601, China

      • 2.

        Shandong Key Laboratory of Intelligent Energy Materials, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China

      • 3.

        Center of Free Electron and Laser and High Magnetic Fields, Anhui University, Hefei 230601, China

      • 4.

        State Key Laboratory of Opto-Electronic Information Acquisition and Protection Technology, Anhui University, Hefei 230601, China

      • 5.

        Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, Anhui University, Hefei 230601, China

      • 6.

        Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

      More Information
      • Jintao Gao received his B.S. degree from Anhui Jianzhu University in 2020. He is currently an M.S. student at Anhui University under the supervision of Prof. Yuxuan Jiang. His research focuses on condensed matter physics
      • Hongyu Liu received his B.S. degree from China University of Petroleum (East China) in 2025. He is currently a master's student at China University of Petroleum (East China) under the supervision of Prof. Jingyue Wang. His research focuses on the preparation of two-dimensional materials
      • Yue Zhang is currently an undergraduate student at China University of Petroleum (East China). His research focuses on two-dimensional materials and first-principles calculations
      • Yuxuan Jiang received his B.S. degree in physics from Peking University and his Ph.D. degree in condensed matter physics from Georgia Institute of Technology. He was a Jack Crow Postdoctoral Fellow at the National High Magnetic Field Laboratory. He is currently a professor at the School of Physics, Anhui University. His research focuses on optical spectroscopy of quantum materials and nonlinear dynamics in NEMS/MEMS
      • Jingyue Wang received his B.S. degree in physics from Shandong University in 2015 and his Ph.D. degree in condensed matter physics from Peking University in 2020. He was a joint-training student at Georgia Institute of Technology and a Boya Postdoctoral Fellow at Peking University. In 2024, he joined China University of Petroleum (East China) as a specially appointed professor. His research focuses on two-dimensional materials, chemical vapor synthesis, quantum properties, and semiconductor devices
      • Corresponding author: Yuxuan.Jiang@ahu.edu.cn; jingyue_wang@upc.edu.cn
      • Received Date: 2026-06-05
      • Revised Date: 2026-08-09
        • Available Online: 2026-09-11

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