Low-temperature growth of high-quality Bi<sub>2</sub>O<sub>2</sub>Se for high-performance photodetection

Xiu Liu; Hengrui Fu; Tiange Zhao; Yiye Yu; Yuzhuo Bai; Xun Ge; Xiaoting Wang

doi:10.1088/1674-4926/26060015

J. Semicond. > Just Accepted

ARITCLES

Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection

Xiu Liu^{1, 2}, Hengrui Fu^{2, 3}, Tiange Zhao^2,, Yiye Yu², Yuzhuo Bai², Xun Ge^2, and Xiaoting Wang^1,

+ Author Affiliations

1. Key Laboratory of Optoelectronics Technology of Education, School of Information Science and Technology, Beijing University of Technology, Beijing, 100124, China
2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
3. School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China

Author Bio:

Xiu Liu received his BEng degree from Hebei University of Science and Technology in 2024. He is currently a master’s student at Beijing University of Technology under the supervision of Associate Professor Xiaoting Wang. His research focuses on the CVD synthesis of two-dimensional semiconductor materials and their optoelectronic properties.

Tiange Zhao received his Ph.D. degree in Materials physics and Chemistry from Sun Yat-sen University, Guangzhou, China, in 2023. He is currently an associate professor in Prof. Weida Hu’s group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on 2D materials synthesis and integration for optoelectronic applications.

Xun Ge received his Ph.D. degree from East China Normal University in 2023. He is currently a postdoctor in Prof. Weida Hu’s group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research focuses on applying data-driven and machine learning approaches to discover novel optoelectronic semiconductors.

Xiaoting Wang received her Ph.D. from Institute of Semiconductors, Chinese Academy of Science in 2018 under the supervision of Prof. Jingbo Li and Prof. Zhongming Wei. Then she worked as a postdoctoral fellow at the Hong Kong Polytechnic University in Prof. Mingjie Li’s group. She is currently a Professor at Information Department, Beijing University of Technology. Her research group focuses on synthesis of low-dimensional semiconductor and their related photoelectric properties.

Corresponding author: Tiange Zhao, zhaotiange@mail.sitp.ac.cn; Xun Ge, gexun@mail.sitp.ac.cn; Xiaoting Wang, wxt22@bjut.edu.cn

DOI: 10.1088/1674-4926/26060015CSTR: 32376.14.1674-4926.26060015

Abstract: Bi₂O₂Se is a high-mobility, narrow-bandgap n-type layered semiconductor promising for broadband photodetection. However, its synthesis often relies on high temperatures or complex precursor systems that increase the thermal budget and limit device integration. Here we report a low-melting-point precursor-assisted chemical vapor deposition (CVD) strategy for growing high-quality Bi₂O₂Se nanosheets at 450 °C. Using elemental Bi and Se powders under an Ar/O₂ atmosphere, we obtain single-crystalline nanosheets with uniform composition, long-term air stability and lateral sizes up to 0.6 mm. Photodetectors fabricated from the nanosheets show broadband response from 520 to 1550 nm, with a responsivity of 14.17 A∙W⁻¹ and a specific detectivity of 6.39 × 10¹⁰ Jones at 1550 nm. The devices also exhibit fast response, with rise and fall times of 59 and 67 μs, respectively. Single-pixel imaging at 520 and 1550 nm further demonstrates their visible and near-infrared imaging capability. This work establishes low-melting-point precursor-assisted CVD as an effective route for low-temperature Bi₂O₂Se growth and points to its potential in broadband, high-speed photodetection.

Keywords: Bi₂O₂Se nanosheets, low-temperature growth, broadband photodetection

References

[1]	Yin J B, Tan Z J, Hong H, et al. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nat Commun, 2018, 9: 3311 doi: 10.1038/s41467-018-05874-2
[2]	Bie Y Q, Grosso G, Heuck M, et al. A MoTe₂-based light-emitting diode and photodetector for silicon photonic integrated circuits. Nat Nanotechnol, 2017, 12(12): 1124 doi: 10.1038/nnano.2017.209
[3]	Chen G X, Zhou Y, Zhang G B, et al. Flexible, self-powered Bi₂O₂Se/Graphene photoeletrochemical photodetector based on solid-state electrolytes. Ceram Int, 2021, 47(18): 25255 doi: 10.1016/j.ceramint.2021.05.246
[4]	Dong T, Simões J, Yang Z C. Flexible photodetector based on 2D materials: Processing, architectures, and applications. Adv Mater Interfaces, 2020, 7(4): 1901657 doi: 10.1002/admi.201901657
[5]	Zhao T G, Guo J X, Li T T, et al. Substrate engineering for wafer-scale two-dimensional material growth: Strategies, mechanisms, and perspectives. Chem Soc Rev, 2023, 52(5): 1650 doi: 10.1039/D2CS00657J
[6]	Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96 doi: 10.1038/s41928-024-01117-z
[7]	Zhao T G, Duan S J, et al. Edge-dominated epitaxy of topological insulator Bi₂Se₃ with ultrabroadband response. ACS Nano, 2025, 19(28): 26055 doi: 10.1021/acsnano.5c06699
[8]	Mak K F, Lee C, Hone J, et al. Atomically ThinMoS₂: A new direct-gap semiconductor. Phys Rev Lett, 2010, 105(13): 136805 doi: 10.1103/PhysRevLett.105.136805
[9]	Chaves A, Azadani J G, Alsalman H, et al. Bandgap engineering of two-dimensional semiconductor materials. npj 2D Mater Appl, 2020, 4: 29 doi: 10.1038/s41699-020-00162-4
[10]	Liu Y, Huang Y, Duan X F. Van der Waals integration before and beyond two-dimensional materials. Nature, 2019, 567(7748): 323 doi: 10.1038/s41586-019-1013-x
[11]	Huang X H, Liu C S, Zhou P. 2D semiconductors for specific electronic applications: From device to system. npj 2D Mater Appl, 2022, 6: 51 doi: 10.1038/s41699-022-00327-3
[12]	Bolotin K I, Sikes K J, Jiang Z, et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun, 2008, 146(9/10): 351
[13]	Mak K F, Sfeir M Y, Wu Y, et al. Measurement of the optical conductivity of graphene. Phys Rev Lett, 2008, 101(19): 196405 doi: 10.1103/PhysRevLett.101.196405
[14]	Hashemnezhad H, Noori M. Zero-biased graphene photodetector with high responsivity integrated into silicon microring resonator. Sci Rep, 2025, 15: 27701 doi: 10.1038/s41598-025-13649-1
[15]	Yu Z H, Ong Z Y, Li S L, et al. Analyzing the carrier mobility in transition-metal dichalcogenide MoS₂ field-effect transistors. Adv Funct Mater, 2017, 27(19): 1604093 doi: 10.1002/adfm.201604093
[16]	Taffelli A, Dirè S, Quaranta A, et al. MoS₂ based photodetectors: A review. Sensors, 2021, 21(8): 2758 doi: 10.3390/s21082758
[17]	Wang Q S, Lai J W, Sun D. Review of photo response in semiconductor transition metal dichalcogenides based photosensitive devices. Opt Mater Express, 2016, 6(7): 2313 doi: 10.1364/OME.6.002313
[18]	Engel M, Steiner M, Avouris P. Black phosphorus photodetector for multispectral, high-resolution imaging. Nano Lett, 2014, 14(11): 6414 doi: 10.1021/nl502928y
[19]	Abellán G, Wild S, Lloret V, et al. FundamentalInsights into the degradation and stabilizationof thin layer black phosphorus. J Am Chem Soc, 2017, 139(30): 10432 doi: 10.1021/jacs.7b04971
[20]	Island J O, Steele G A, van der Zant H S J, et al. Environmental instability of few-layer black phosphorus. 2D Mater, 2015, 2(1): 011002
[21]	Chen Y F, Ma W L, Tan C W, et al. Broadband Bi₂O₂Se photodetectors from infrared to terahertz. Adv Funct Mater, 2021, 31(14): 2009554 doi: 10.1002/adfm.202009554
[22]	Liu S Y, He D W, Tan C W, et al. Charge transfer properties of heterostructures formed by Bi₂O₂Se and transition metal dichalcogenide monolayers. Small, 2022, 18(7): 2106078 doi: 10.1002/smll.202106078
[23]	Tan C W, Tang J C, Gao X, et al. 2D bismuth oxyselenide semiconductor for future electronics. Nat Rev Electr Eng, 2025, 2(7): 494 doi: 10.1038/s44287-025-00179-1
[24]	Wu J X, Yuan H T, Meng M M, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se. Nat Nanotechnol, 2017, 12(6): 530 doi: 10.1038/nnano.2017.43
[25]	Wang J Y, Huang J W, Kaplan D, et al. Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect. Nat Nanotechnol, 2024, 19(10): 1452 doi: 10.1038/s41565-024-01732-z
[26]	Pan L, Zhao L, Zhang X X, et al. Significant optimization of electron–phonon transport of n-type Bi₂O₂Se by mechanical manipulation of Se vacancies via shear exfoliation. ACS Appl Mater Interfaces, 2019, 11(24): 21603 doi: 10.1021/acsami.9b05470
[27]	Huang C W, Yu H Z. Two-dimensional Bi₂O₂Se with high mobility for high-performance polymer solar cells. ACS Appl Mater Interfaces, 2020, 12(17): 19643 doi: 10.1021/acsami.0c01364
[28]	Ghosh T, Samanta M, Vasdev A, et al. Ultrathin free-standing nanosheets of Bi₂O₂Se: Room temperature ferroelectricity in self-assembled charged layered heterostructure. Nano Lett, 2019, 19(8): 5703 doi: 10.1021/acs.nanolett.9b02312
[29]	Tian X L, Luo H Y, Wei R F, et al. An ultrabroadband mid-infrared pulsed optical switch employing solution-processed bismuth oxyselenide. Adv Mater, 2018, 30(31): 1801021 doi: 10.1002/adma.201801021
[30]	Zhang K Y, Hu C G, Kang X L, et al. Synthesis and thermoelectric properties of Bi₂O₂Se nanosheets. Mater Res Bull, 2013, 48(10): 3968 doi: 10.1016/j.materresbull.2013.06.013
[31]	Wu J X, Tan C W, Tan Z J, et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett, 2017, 17(5): 3021 doi: 10.1021/acs.nanolett.7b00335
[32]	Wu J X, Qiu C G, Fu H X, et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi₂O₂Se. Nano Lett, 2019, 19(1): 197 doi: 10.1021/acs.nanolett.8b03696
[33]	Wu Z, Liu G L, Wang Y X, et al. Seed-induced vertical growth of 2D Bi₂O₂Se nanoplates by chemical vapor transport. Adv Funct Mater, 2019, 29(50): 1906639 doi: 10.1002/adfm.201906639
[34]	Khan U, Luo Y T, Tang L, et al. Controlled vapor–solid deposition of millimeter-size single crystal 2D Bi₂O₂Se for high-performance phototransistors. Adv Funct Mater, 2019, 29(14): 1807979 doi: 10.1002/adfm.201807979
[35]	Dong Z L, Hua Q L, Xi J G, et al. Ultrafast and low-power 2D Bi₂O₂Se memristors for neuromorphic computing applications. Nano Lett, 2023, 23(9): 3842 doi: 10.1021/acs.nanolett.3c00322
[36]	Yang X, Zhang Q, Song Y C, et al. High mobility two-dimensional bismuth oxyselenide single crystals with large grain size grown by reverse-flow chemical vapor deposition. ACS Appl Mater Interfaces, 2021, 13(41): 49153 doi: 10.1021/acsami.1c13491
[37]	Liang Y, Chen Y J, Sun Y W, et al. Molecular beam epitaxy and electronic structure of atomically thin oxyselenide films. Adv Mater, 2019, 31(39): 1901964 doi: 10.1002/adma.201901964
[38]	Hung T P, Chen W-H, et al. Ultrathin Bi₂O₂Se/Si heterojunction photodetector with tunneling oxide passivation for enhanced optoelectronic performance. ACS Appl Mater Interfaces, 2025, 17(18): 26931 doi: 10.1021/acsami.5c03477
[39]	Luo P, Wang F K, Qu J Y, et al. Self-driven WSe₂/Bi₂O₂Se van der Waals heterostructure photodetectors with high light on/off ratio and fast response. Adv Funct Mater, 2021, 31(8): 2008351 doi: 10.1002/adfm.202008351
[40]	Tan C W, Tang M, Wu J X, et al. Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors. Nano Lett, 2019, 19(3): 2148 doi: 10.1021/acs.nanolett.9b00381
[41]	Li J, Wang Z X, Wen Y, et al. High-performance near-infrared photodetector based on ultrathin Bi₂O₂Se nanosheets. Adv Funct Mater, 2018, 28(10): 1706437 doi: 10.1002/adfm.201706437
[42]	Zhang K N, She Y H, Cai X B, et al. Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides. Nat Nanotechnol, 2023, 18(5): 448 doi: 10.1038/s41565-023-01326-1
[43]	Zhou G Y, Younas R, Sun T, et al. Superior quality low-temperature growth of three-dimensional semiconductors using intermediate two-dimensional layers. ACS Nano, 2022, 16(11): 19385 doi: 10.1021/acsnano.2c08987
[44]	Khan U, Nairan A, Khan K, et al. Salt-assisted low-temperature growth of 2D Bi₂O₂Se with controlled thickness for electronics. Small, 2023, 19(10): 2206648 doi: 10.1002/smll.202206648
[45]	Kang M, Chai H J, Jeong H B, et al. Low-temperature and high-quality growth of Bi₂O₂Se layered SemiconductorsviaCracking metal–organic chemical vapor deposition. ACS Nano, 2021, 15(5): 8715 doi: 10.1021/acsnano.1c00811
[46]	Pálinkás A, Kálvin G, Vancsó P, et al. The composition and structure of the ubiquitous hydrocarbon contamination on van der Waals materials. Nat Commun, 2022, 13: 6770 doi: 10.1038/s41467-022-34641-7
[47]	Pürckhauer K, Kirpal D, Weymouth A J, et al. Analysis of airborne contamination on transition metal dichalcogenides with atomic force microscopy revealing that sulfur is the preferred chalcogen atom for devices made in ambient conditions. ACS Appl Nano Mater, 2019, 2(5): 2593 doi: 10.1021/acsanm.9b00526
[48]	Li X Y, University Q, Wang P, et al. Reverse-flow-suppressed chemical vapor deposition growth of Bi₂O₂Se nanosheets: Nanoscale charge-transport analysis and high-responsivity photodetection. ACS Appl Mater Interfaces, 2026, 18(7): 11619 doi: 10.1021/acsami.5c25342
[49]	Tian H X, Tian Y C, et al. Salt-templated epitaxy and transfer of single-crystal 2D Bi₂O₂Se nanosheets for high-performance broadband photodetectors. ACS Appl Electron Mater, 2025, 7(5): 1852 doi: 10.1021/acsaelm.4c02144
[50]	Zhu L H, Duan S K, Chen M H, et al. Mid-wavelength infrared detector array based on black phosphorus ink thin film. J. Infrared Millimeter Waves, 2026, 45(3): 345-356
[51]	Huang Q, Nie J Q, Li J, et al. Revealing the role of vapor flux in chemical vapor deposition growth of Bi₂O₂Se for photodetectors. Nanomaterials, 2025, 15(8): 567 doi: 10.3390/nano15080567
[52]	Yu Y Y, Peng M, Zhong F, et al. Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS₃ infrared photodetector. Mater Horiz, 2023, 10(7): 2579 doi: 10.1039/D2MH01495E
[53]	Yu H H, Liu X, Wei X F, et al. Uniform doping for MoS₂/MoTe₂ van der Waals junction field-effect transistors with ideal subthreshold slope. Natl Sci Open, 2025, 4(5): 20250034 doi: 10.1360/nso/20250034
[54]	Wang W, Ho J C Y. A universal epitaxy platform for bismuth-based crystals. J. Infrared Millimeter Waves, DOI: 10. 11972/j. issn. 1001-9014. JIMW. 2026166

Fig. 1. (Color online) Low temperature growth and characterization of Bi₂O₂Se nanosheet. (a) Schematic illustration of the synthesis of Bi₂O₂Se nanosheets using a modified CVD method. (b) Optical images of Bi₂O₂Se nanosheets grown at 450 °C. (c) Optical image of a 0.6 mm Bi₂O₂Se nanosheet grown at 650 °C. (d) AFM image of a monolayer Bi₂O₂Se nanosheet grown at 450 °C. The inset shows the optical image of the Bi₂O₂Se nanosheet. (e) Raman spectrum of Bi₂O₂Se nanosheet. (f−h) XPS spectra of Bi, O and Se elements, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Atomic structure and chemical composition. (a) HRTEM image of Bi₂O₂Se nanosheet and the simulation diagram of its atomic structure. (b−d) Intensity profile along the yellow dotted box in (a), SAED pattern and the corresponding element maps of Bi₂O₂Se nanosheet. (e, f) HAADF-STEM atomic image of the Bi₂O₂Se nanosheet. (g) Corresponding FFT based on (e). Scale bar: 2 nm⁻¹ (c), 10 μm (d).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Environmental stability of Bi₂O₂Se nanosheets. (a–c) Optical images of the nanosheets after storage in air for fresh, 6 months and 1 year. (d–f) Corresponding AFM images and height profiles, showing a nearly unchanged thickness of 6.1 nm. (g) Evolution of the surface roughness with storage time. (h) Raman spectra of Bi₂O₂Se nanosheets after different storage times, showing a stable $ \text{A}_{\text{g}}^{1} $ characteristic peak.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Structure and Photoelectric Detection Performance of Photodetectors Based on Bi₂O₂Se Nanosheets. (a) Schematic diagram of a photodetector under VIS-NIR illumination. (b) Photocurrent under illumination with different wavelengths of 520 nm (27.37 nW/μm²), 830 nm (19.35 nW/μm²), 940 nm (25.27 nW/μm²), 1.06 μm (26.42 nW/μm²), 1.31 μm (17.94 nW/μm²), 1.55 μm (23.76 nW/μm²). V_bias = 3 V. The inset shows a representative optical image of the device. Scale bar: 10 μm. (c) Response time of the Bi₂O₂Se nanosheet photodetector. (d) Continuous photocurrent of the device under the irradiation of 1.55 μm laser with different light power densities (1.96−23.76 nW/μm²). The inset shows corresponding fitting curve of photocurrent versus power density. (e) Responsivity of the device as a function of incident light intensity under various wavelengths from 520 nm to 1.55 μm. (f) Detectivity of the device as a function of wavelength from 520 nm to 1.55 μm. (g−h) Single-pixel imaging based on the Bi₂O₂Se nanosheet photodetector. Photocurrent images of “BJUT” and “SITP” patterns were obtained under 520 nm and 1.55 μm laser illumination, respectively.

DownLoad: Full-Size Img PowerPoint

Table 1. Comparison of the growth conditions and photodetection performance of Bi₂O₂Se

Method	Precursor	Growth temperature (°C)	Growth size (μm)	Response range (nm)	R (A∙W⁻¹)	D* (Jones)	Response time	Ref
CVD	Bi + Se	450	600	520−1550	198.31	8.95 × 10¹¹	59/67 μs	This work
CVD	Bi₂Se₃ + Bi₂O₃	500	200	−	−	−	−	[31]
CVD	Se + Bi₂O₃	<680	251	−	−	−	−	[32]
CVD	Bi₂Se₃ + Bi₂O₃	<750	<50	365−2000	0.638	−	2.4/2.6 μs	[39]
CVD	Bi₂Se₃ + NaCl + O₂	<500	1000	−	−	−	−	[44]
CVD	Bi(C₆H₅)₃ + (CH₃)₂Se + O₂	300−400	20	405−1350	45134	−	−	[45]
CVD	Bi₂Se₃ + Bi₂O₃	700	<25	405−808	193	4.76 × 10¹²	40/42 ms	[48]
CVD	Bi₂Se₃ + Bi₂O₃	500	150	405−1550	9.2 × 10⁶	2.9 × 10¹⁵	−	[49]
CVD	Bi₂Se₃ + Bi₂O₃	820	220	447	94.98	1.46 × 10⁹	18/19 ms	[51]
PVD	Bi₂O₂Se	600	260	−	−	−	−	[35]
PVD	Bi₂O₂Se	500	560	350−1050	0.49	1.06 × 10¹³	9.2/4.6 ms	[46]

DownLoad: CSV

[1]	Yin J B, Tan Z J, Hong H, et al. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nat Commun, 2018, 9: 3311 doi: 10.1038/s41467-018-05874-2
[2]	Bie Y Q, Grosso G, Heuck M, et al. A MoTe₂-based light-emitting diode and photodetector for silicon photonic integrated circuits. Nat Nanotechnol, 2017, 12(12): 1124 doi: 10.1038/nnano.2017.209
[3]	Chen G X, Zhou Y, Zhang G B, et al. Flexible, self-powered Bi₂O₂Se/Graphene photoeletrochemical photodetector based on solid-state electrolytes. Ceram Int, 2021, 47(18): 25255 doi: 10.1016/j.ceramint.2021.05.246
[4]	Dong T, Simões J, Yang Z C. Flexible photodetector based on 2D materials: Processing, architectures, and applications. Adv Mater Interfaces, 2020, 7(4): 1901657 doi: 10.1002/admi.201901657
[5]	Zhao T G, Guo J X, Li T T, et al. Substrate engineering for wafer-scale two-dimensional material growth: Strategies, mechanisms, and perspectives. Chem Soc Rev, 2023, 52(5): 1650 doi: 10.1039/D2CS00657J
[6]	Zhao T G, Wang Z, Hu W D. Wafer-scale transfer of two-dimensional materials with UV tape. Nat Electron, 2024, 7(2): 96 doi: 10.1038/s41928-024-01117-z
[7]	Zhao T G, Duan S J, et al. Edge-dominated epitaxy of topological insulator Bi₂Se₃ with ultrabroadband response. ACS Nano, 2025, 19(28): 26055 doi: 10.1021/acsnano.5c06699
[8]	Mak K F, Lee C, Hone J, et al. Atomically ThinMoS₂: A new direct-gap semiconductor. Phys Rev Lett, 2010, 105(13): 136805 doi: 10.1103/PhysRevLett.105.136805
[9]	Chaves A, Azadani J G, Alsalman H, et al. Bandgap engineering of two-dimensional semiconductor materials. npj 2D Mater Appl, 2020, 4: 29 doi: 10.1038/s41699-020-00162-4
[10]	Liu Y, Huang Y, Duan X F. Van der Waals integration before and beyond two-dimensional materials. Nature, 2019, 567(7748): 323 doi: 10.1038/s41586-019-1013-x
[11]	Huang X H, Liu C S, Zhou P. 2D semiconductors for specific electronic applications: From device to system. npj 2D Mater Appl, 2022, 6: 51 doi: 10.1038/s41699-022-00327-3
[12]	Bolotin K I, Sikes K J, Jiang Z, et al. Ultrahigh electron mobility in suspended graphene. Solid State Commun, 2008, 146(9/10): 351
[13]	Mak K F, Sfeir M Y, Wu Y, et al. Measurement of the optical conductivity of graphene. Phys Rev Lett, 2008, 101(19): 196405 doi: 10.1103/PhysRevLett.101.196405
[14]	Hashemnezhad H, Noori M. Zero-biased graphene photodetector with high responsivity integrated into silicon microring resonator. Sci Rep, 2025, 15: 27701 doi: 10.1038/s41598-025-13649-1
[15]	Yu Z H, Ong Z Y, Li S L, et al. Analyzing the carrier mobility in transition-metal dichalcogenide MoS₂ field-effect transistors. Adv Funct Mater, 2017, 27(19): 1604093 doi: 10.1002/adfm.201604093
[16]	Taffelli A, Dirè S, Quaranta A, et al. MoS₂ based photodetectors: A review. Sensors, 2021, 21(8): 2758 doi: 10.3390/s21082758
[17]	Wang Q S, Lai J W, Sun D. Review of photo response in semiconductor transition metal dichalcogenides based photosensitive devices. Opt Mater Express, 2016, 6(7): 2313 doi: 10.1364/OME.6.002313
[18]	Engel M, Steiner M, Avouris P. Black phosphorus photodetector for multispectral, high-resolution imaging. Nano Lett, 2014, 14(11): 6414 doi: 10.1021/nl502928y
[19]	Abellán G, Wild S, Lloret V, et al. FundamentalInsights into the degradation and stabilizationof thin layer black phosphorus. J Am Chem Soc, 2017, 139(30): 10432 doi: 10.1021/jacs.7b04971
[20]	Island J O, Steele G A, van der Zant H S J, et al. Environmental instability of few-layer black phosphorus. 2D Mater, 2015, 2(1): 011002
[21]	Chen Y F, Ma W L, Tan C W, et al. Broadband Bi₂O₂Se photodetectors from infrared to terahertz. Adv Funct Mater, 2021, 31(14): 2009554 doi: 10.1002/adfm.202009554
[22]	Liu S Y, He D W, Tan C W, et al. Charge transfer properties of heterostructures formed by Bi₂O₂Se and transition metal dichalcogenide monolayers. Small, 2022, 18(7): 2106078 doi: 10.1002/smll.202106078
[23]	Tan C W, Tang J C, Gao X, et al. 2D bismuth oxyselenide semiconductor for future electronics. Nat Rev Electr Eng, 2025, 2(7): 494 doi: 10.1038/s44287-025-00179-1
[24]	Wu J X, Yuan H T, Meng M M, et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi₂O₂Se. Nat Nanotechnol, 2017, 12(6): 530 doi: 10.1038/nnano.2017.43
[25]	Wang J Y, Huang J W, Kaplan D, et al. Even-integer quantum Hall effect in an oxide caused by a hidden Rashba effect. Nat Nanotechnol, 2024, 19(10): 1452 doi: 10.1038/s41565-024-01732-z
[26]	Pan L, Zhao L, Zhang X X, et al. Significant optimization of electron–phonon transport of n-type Bi₂O₂Se by mechanical manipulation of Se vacancies via shear exfoliation. ACS Appl Mater Interfaces, 2019, 11(24): 21603 doi: 10.1021/acsami.9b05470
[27]	Huang C W, Yu H Z. Two-dimensional Bi₂O₂Se with high mobility for high-performance polymer solar cells. ACS Appl Mater Interfaces, 2020, 12(17): 19643 doi: 10.1021/acsami.0c01364
[28]	Ghosh T, Samanta M, Vasdev A, et al. Ultrathin free-standing nanosheets of Bi₂O₂Se: Room temperature ferroelectricity in self-assembled charged layered heterostructure. Nano Lett, 2019, 19(8): 5703 doi: 10.1021/acs.nanolett.9b02312
[29]	Tian X L, Luo H Y, Wei R F, et al. An ultrabroadband mid-infrared pulsed optical switch employing solution-processed bismuth oxyselenide. Adv Mater, 2018, 30(31): 1801021 doi: 10.1002/adma.201801021
[30]	Zhang K Y, Hu C G, Kang X L, et al. Synthesis and thermoelectric properties of Bi₂O₂Se nanosheets. Mater Res Bull, 2013, 48(10): 3968 doi: 10.1016/j.materresbull.2013.06.013
[31]	Wu J X, Tan C W, Tan Z J, et al. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett, 2017, 17(5): 3021 doi: 10.1021/acs.nanolett.7b00335
[32]	Wu J X, Qiu C G, Fu H X, et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi₂O₂Se. Nano Lett, 2019, 19(1): 197 doi: 10.1021/acs.nanolett.8b03696
[33]	Wu Z, Liu G L, Wang Y X, et al. Seed-induced vertical growth of 2D Bi₂O₂Se nanoplates by chemical vapor transport. Adv Funct Mater, 2019, 29(50): 1906639 doi: 10.1002/adfm.201906639
[34]	Khan U, Luo Y T, Tang L, et al. Controlled vapor–solid deposition of millimeter-size single crystal 2D Bi₂O₂Se for high-performance phototransistors. Adv Funct Mater, 2019, 29(14): 1807979 doi: 10.1002/adfm.201807979
[35]	Dong Z L, Hua Q L, Xi J G, et al. Ultrafast and low-power 2D Bi₂O₂Se memristors for neuromorphic computing applications. Nano Lett, 2023, 23(9): 3842 doi: 10.1021/acs.nanolett.3c00322
[36]	Yang X, Zhang Q, Song Y C, et al. High mobility two-dimensional bismuth oxyselenide single crystals with large grain size grown by reverse-flow chemical vapor deposition. ACS Appl Mater Interfaces, 2021, 13(41): 49153 doi: 10.1021/acsami.1c13491
[37]	Liang Y, Chen Y J, Sun Y W, et al. Molecular beam epitaxy and electronic structure of atomically thin oxyselenide films. Adv Mater, 2019, 31(39): 1901964 doi: 10.1002/adma.201901964
[38]	Hung T P, Chen W-H, et al. Ultrathin Bi₂O₂Se/Si heterojunction photodetector with tunneling oxide passivation for enhanced optoelectronic performance. ACS Appl Mater Interfaces, 2025, 17(18): 26931 doi: 10.1021/acsami.5c03477
[39]	Luo P, Wang F K, Qu J Y, et al. Self-driven WSe₂/Bi₂O₂Se van der Waals heterostructure photodetectors with high light on/off ratio and fast response. Adv Funct Mater, 2021, 31(8): 2008351 doi: 10.1002/adfm.202008351
[40]	Tan C W, Tang M, Wu J X, et al. Wafer-scale growth of single-crystal 2D semiconductor on perovskite oxides for high-performance transistors. Nano Lett, 2019, 19(3): 2148 doi: 10.1021/acs.nanolett.9b00381
[41]	Li J, Wang Z X, Wen Y, et al. High-performance near-infrared photodetector based on ultrathin Bi₂O₂Se nanosheets. Adv Funct Mater, 2018, 28(10): 1706437 doi: 10.1002/adfm.201706437
[42]	Zhang K N, She Y H, Cai X B, et al. Epitaxial substitution of metal iodides for low-temperature growth of two-dimensional metal chalcogenides. Nat Nanotechnol, 2023, 18(5): 448 doi: 10.1038/s41565-023-01326-1
[43]	Zhou G Y, Younas R, Sun T, et al. Superior quality low-temperature growth of three-dimensional semiconductors using intermediate two-dimensional layers. ACS Nano, 2022, 16(11): 19385 doi: 10.1021/acsnano.2c08987
[44]	Khan U, Nairan A, Khan K, et al. Salt-assisted low-temperature growth of 2D Bi₂O₂Se with controlled thickness for electronics. Small, 2023, 19(10): 2206648 doi: 10.1002/smll.202206648
[45]	Kang M, Chai H J, Jeong H B, et al. Low-temperature and high-quality growth of Bi₂O₂Se layered SemiconductorsviaCracking metal–organic chemical vapor deposition. ACS Nano, 2021, 15(5): 8715 doi: 10.1021/acsnano.1c00811
[46]	Pálinkás A, Kálvin G, Vancsó P, et al. The composition and structure of the ubiquitous hydrocarbon contamination on van der Waals materials. Nat Commun, 2022, 13: 6770 doi: 10.1038/s41467-022-34641-7
[47]	Pürckhauer K, Kirpal D, Weymouth A J, et al. Analysis of airborne contamination on transition metal dichalcogenides with atomic force microscopy revealing that sulfur is the preferred chalcogen atom for devices made in ambient conditions. ACS Appl Nano Mater, 2019, 2(5): 2593 doi: 10.1021/acsanm.9b00526
[48]	Li X Y, University Q, Wang P, et al. Reverse-flow-suppressed chemical vapor deposition growth of Bi₂O₂Se nanosheets: Nanoscale charge-transport analysis and high-responsivity photodetection. ACS Appl Mater Interfaces, 2026, 18(7): 11619 doi: 10.1021/acsami.5c25342
[49]	Tian H X, Tian Y C, et al. Salt-templated epitaxy and transfer of single-crystal 2D Bi₂O₂Se nanosheets for high-performance broadband photodetectors. ACS Appl Electron Mater, 2025, 7(5): 1852 doi: 10.1021/acsaelm.4c02144
[50]	Zhu L H, Duan S K, Chen M H, et al. Mid-wavelength infrared detector array based on black phosphorus ink thin film. J. Infrared Millimeter Waves, 2026, 45(3): 345-356
[51]	Huang Q, Nie J Q, Li J, et al. Revealing the role of vapor flux in chemical vapor deposition growth of Bi₂O₂Se for photodetectors. Nanomaterials, 2025, 15(8): 567 doi: 10.3390/nano15080567
[52]	Yu Y Y, Peng M, Zhong F, et al. Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS₃ infrared photodetector. Mater Horiz, 2023, 10(7): 2579 doi: 10.1039/D2MH01495E
[53]	Yu H H, Liu X, Wei X F, et al. Uniform doping for MoS₂/MoTe₂ van der Waals junction field-effect transistors with ideal subthreshold slope. Natl Sci Open, 2025, 4(5): 20250034 doi: 10.1360/nso/20250034
[54]	Wang W, Ho J C Y. A universal epitaxy platform for bismuth-based crystals. J. Infrared Millimeter Waves, DOI: 10. 11972/j. issn. 1001-9014. JIMW. 2026166

Supplementary_Information.pdf

Search

GET CITATION

shu

Export: BibTex EndNote

Article Metrics

Article views: 4 Times PDF downloads: 0 Times Cited by: 0 Times

History

Received: 09 June 2026 Revised: 03 September 2026 Online: Accepted Manuscript: 17 September 2026

Article Navigation > Journal of Semiconductors > 2026 > Accepted Manuscript

Xiu Liu, Hengrui Fu, Tiange Zhao, Yiye Yu, Yuzhuo Bai, Xun Ge, Xiaoting Wang. Low-temperature growth of high-quality Bi2O2Se for high-performance photodetection[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060015 ****X Liu, H R Fu, T G Zhao, Y Y Yu, Y Z Bai, X Ge, and X T Wang, Low-temperature growth of high-quality Bi2O2Se for high-performance photodetection[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060015

Citation:

Xiu Liu, Hengrui Fu, Tiange Zhao, Yiye Yu, Yuzhuo Bai, Xun Ge, Xiaoting Wang. Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060015 ****

X Liu, H R Fu, T G Zhao, Y Y Yu, Y Z Bai, X Ge, and X T Wang, Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060015

Citation:

PDF( 20767 KB)

Low-temperature growth of high-quality Bi₂O₂Se for high-performance photodetection

DOI: 10.1088/1674-4926/26060015

CSTR: 32376.14.1674-4926.26060015

Xiu Liu^{1, 2},
Hengrui Fu^{2, 3},
Tiange Zhao^2,,
Yiye Yu²,
Yuzhuo Bai²,
Xun Ge^2,,
Xiaoting Wang^1,

1.
Key Laboratory of Optoelectronics Technology of Education, School of Information Science and Technology, Beijing University of Technology, Beijing, 100124, China
2.
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
3.
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450001, China

More Information

Xiu Liu received his BEng degree from Hebei University of Science and Technology in 2024. He is currently a master’s student at Beijing University of Technology under the supervision of Associate Professor Xiaoting Wang. His research focuses on the CVD synthesis of two-dimensional semiconductor materials and their optoelectronic properties
Tiange Zhao received his Ph.D. degree in Materials physics and Chemistry from Sun Yat-sen University, Guangzhou, China, in 2023. He is currently an associate professor in Prof. Weida Hu’s group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research interests focus on 2D materials synthesis and integration for optoelectronic applications
Xun Ge received his Ph.D. degree from East China Normal University in 2023. He is currently a postdoctor in Prof. Weida Hu’s group in Shanghai Institute of Technical Physics, Chinese Academy of Sciences. His research focuses on applying data-driven and machine learning approaches to discover novel optoelectronic semiconductors
Xiaoting Wang received her Ph.D. from Institute of Semiconductors, Chinese Academy of Science in 2018 under the supervision of Prof. Jingbo Li and Prof. Zhongming Wei. Then she worked as a postdoctoral fellow at the Hong Kong Polytechnic University in Prof. Mingjie Li’s group. She is currently a Professor at Information Department, Beijing University of Technology. Her research group focuses on synthesis of low-dimensional semiconductor and their related photoelectric properties
Corresponding author: zhaotiange@mail.sitp.ac.cn; gexun@mail.sitp.ac.cn; wxt22@bjut.edu.cn
Received Date: 2026-06-09
Revised Date: 2026-09-03

Available Online: 2026-09-17

Abstract

Abstract

Bi₂O₂Se is a high-mobility, narrow-bandgap n-type layered semiconductor promising for broadband photodetection. However, its synthesis often relies on high temperatures or complex precursor systems that increase the thermal budget and limit device integration. Here we report a low-melting-point precursor-assisted chemical vapor deposition (CVD) strategy for growing high-quality Bi₂O₂Se nanosheets at 450 °C. Using elemental Bi and Se powders under an Ar/O₂ atmosphere, we obtain single-crystalline nanosheets with uniform composition, long-term air stability and lateral sizes up to 0.6 mm. Photodetectors fabricated from the nanosheets show broadband response from 520 to 1550 nm, with a responsivity of 14.17 A∙W⁻¹ and a specific detectivity of 6.39 × 10¹⁰ Jones at 1550 nm. The devices also exhibit fast response, with rise and fall times of 59 and 67 μs, respectively. Single-pixel imaging at 520 and 1550 nm further demonstrates their visible and near-infrared imaging capability. This work establishes low-melting-point precursor-assisted CVD as an effective route for low-temperature Bi₂O₂Se growth and points to its potential in broadband, high-speed photodetection.
- Bi₂O₂Se nanosheets,
- low-temperature growth,
- broadband photodetection

Supplementary materials to this article can be found online at .https://doi.org/10.1088/1674-4926/26060015.

FullText(HTML)

References(54)