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Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels

Junchang Wang1, 2, Hongyu Chen1, Wanlin Zhang3, Junyan Ren1, 2, , Liqiang Zhu3, Yiting Cheng1, 2, Yuting Xiong1, 2, Wangying Xu4, Lingyan Liang1, 2, and Hongtao Cao1, 2

+ Author Affiliations

 Corresponding author: Junyan Ren, renjunyan@nimte.ac.cn; Lingyan Liang, lly@nimte.ac.cn

DOI: 10.1088/1674-4926/26060020CSTR: 32376.14.1674-4926.26060020

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Abstract: The von Neumann architecture faces significant challenges in efficiently processing large-scale image data due to the physical separation of memory and processing units. Inspired by the integrated memory-computing functionality of biological synapses and the quantum confinement effect of silver sulfide quantum dots (Ag2S QDs), we develop a novel synaptic thin-film transistor with a composite-channel structure. This structure incorporates Ag2S QDs between two indium gallium zinc oxide (IGZO) layers, forming a “sandwich” configuration. This design not only preserves the excellent electrical properties of IGZO but also extends the photoresponse range from ultraviolet to near-infrared (350−950 nm) by utilizing the broadband optical absorption characteristics of Ag2S QDs. The resulting composite-channel devices exhibit remarkable persistent photoconductivity (PPC) and satisfactory responsivity, thereby giving rise to excellent synaptic characteristics. These include paired-pulse facilitation, the transition from short-term plasticity to long-term plasticity, and associative learning demonstrated through optoelectronic synergy in a Pavlovian conditioning experiment. Furthermore, we validated the practical utility of our synaptic devices through handwritten digit recognition. The devices successfully demonstrated effective modulation of synaptic weights via light-pulse stimulation and voltage-pulse erasure, achieving a recognition accuracy of up to 90.21%. This work provides a feasible strategy for developing broadband optoelectronic synaptic devices for neuromorphic computing applications.

Keywords: silver sulfide quantum dots, IGZO, thin-film transistors, optoelectronic synaptic, near-infrared response



[1]
Wang Z R, Wu H Q, Burr G W, et al. Resistive switching materials for information processing. Nat Rev Mater, 2020, 5(3): 173 doi: 10.1038/s41578-019-0159-3
[2]
Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: Architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404 doi: 10.1007/s11432-020-3227-1
[3]
Zhang W Q, Gao B, Tang J S, et al. Neuro-inspired computing chips. Nat Electron, 2020, 3(7): 371 doi: 10.1038/s41928-020-0435-7
[4]
Le Gallo M, Sebastian A, Mathis R, et al. Mixed-precision in-memory computing. Nat Electron, 2018, 1(4): 246 doi: 10.1038/s41928-018-0054-8
[5]
Mehonic A, Kenyon A J. Brain-inspired computing needs a master plan. Nature, 2022, 604(7905): 255 doi: 10.1038/s41586-021-04362-w
[6]
Xia Q F, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18(4): 309 doi: 10.1038/s41563-019-0291-x
[7]
Sun Y L, Wang H P, Xie D. Recent advance in synaptic plasticity modulation techniques for neuromorphic applications. Nano Micro Lett, 2024, 16(1): 211 doi: 10.1007/s40820-024-01445-x
[8]
Citri A, Malenka R C. Synaptic plasticity: Multiple forms, functions, and mechanisms. Neuropsychopharmacology, 2008, 33(1): 18 doi: 10.1038/sj.npp.1301559
[9]
Han C, Han X W, Han J Y, et al. Light-stimulated synaptic transistor with high PPF feature for artificial visual perception system application. Adv Funct Mater, 2022, 32(22): 2113053 doi: 10.1002/adfm.202113053
[10]
Duan X G, Cao Z L, Gao K K, et al. Memristor-based neuromorphic chips. Adv Mater, 2024, 36(14): 2310704 doi: 10.1002/adma.202310704
[11]
Zhang W B, Yao P, Gao B, et al. Edge learning using a fully integrated neuro-inspired memristor chip. Science, 2023, 381(6663): 1205 doi: 10.1126/science.ade3483
[12]
Pillai P B, De Souza M M. Nanoionics-based three-terminal synaptic device using zinc oxide. ACS Appl Mater Interfaces, 2017, 9(2): 1609 doi: 10.1021/acsami.6b13746
[13]
Zhang F Q, Li C Y, Li Z Y, et al. Recent progress in three-terminal artificial synapses based on 2D materials: From mechanisms to applications, Microsyst Nanoeng, 2023, 9: 16
[14]
Park J W, Kang B H, Kim H J. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics. Adv Funct Mater, 2020, 30(20): 1904632 doi: 10.1002/adfm.201904632
[15]
Duan H X, Liang L Y, Wu Z D, et al. IGZO/CsPbBr3-nanoparticles/IGZO neuromorphic phototransistors and their optoelectronic coupling applications. ACS Appl Mater Interfaces, 2021, 13(25): 30165 doi: 10.1021/acsami.1c05396
[16]
Chen H Y, Ren J R, Sun J T, et al. Photoresponse design in metal oxide semiconductor TFTs toward diverse applications: Display drivers, photodetectors, and optoelectronic synapses. ACS Appl Mater Interfaces, 2025, 17(5): 8727 doi: 10.1021/acsami.5c00152
[17]
Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432(7016): 488 doi: 10.1038/nature03090
[18]
Kim M-K, Lee J-S. Synergistic improvement of long-term plasticity in photonic synapses using ferroelectric polarization in hafnia-based oxide-semiconductor transistors. Adv Mater, 2020, 32(12): 1907826 doi: 10.1002/adma.201907826
[19]
Sun J T, Ren J Y, Xiong Y T, et al. Boosted IGZO optoelectronic synaptic performance by mitigating photolithography-induced surface effects. J Semicond, 2026, 47(3): 032402 doi: 10.1088/1674-4926/25080023
[20]
Gao Z X, Ju X, Zhang H Z, et al. InP quantum dots tailored oxide thin film phototransistor for bioinspired visual adaptation. Adv Funct Mater, 2023, 33(52): 2305959 doi: 10.1002/adfm.202305959
[21]
Gao S L, Qiu L P, Zhang J, et al. Persistent photoconductivity of metal oxide semiconductors. ACS Appl Electron Mater, 2024, 6(3): 1542 doi: 10.1021/acsaelm.3c01549
[22]
Arumugam M, Yang H H. A review of the application of wide-bandgap semiconductor photocatalysts for CO2 reduction. J CO2 Util, 2024, 83: 102808 doi: 10.1016/j.jcou.2024.102808
[23]
Zhang Y N, Li L, Lin Y N, et al. Ultra-sensitive broadband photoresponse realized in epitaxial SnSe/InSe/GaN heterojunction for light adaptive artificial optoelectronic synapses. Nano Energy, 2025, 133: 110511 doi: 10.1016/j.nanoen.2024.110511
[24]
Tan H, Ni Z Y, Peng W B, et al. Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing. Nano Energy, 2018, 52: 422 doi: 10.1016/j.nanoen.2018.08.018
[25]
Wang Z B, Li M, Yang H C, et al. Enhancement-mode carbon nanotube optoelectronic synaptic transistors with large and controllable threshold voltage modulation window for broadband flexible vision systems. ACS Nano, 2024, 18(22): 14298 doi: 10.1021/acsnano.4c00166
[26]
Tan F, Chang C L, Zhang N, et al. Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared. Light Sci Appl, 2025, 14: 122 doi: 10.1038/s41377-025-01792-3
[27]
Fan B J, Zhao X Y, Zhang J Q, et al. Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth. Laser Photonics Rev, 2023, 17(3): 2200455 doi: 10.1002/lpor.202200455
[28]
Ding C P, Huang Y J, Shen Z Y, et al. Synthesis and bioapplications of Ag2S quantum dots with near-infrared fluorescence. Adv Mater, 2021, 33(32): 2007768 doi: 10.1002/adma.202007768
[29]
Shin D, Park Y, Jeong H, et al. Exploring the potential of colloidal quantum dots for near-infrared to short-wavelength infrared applications. Adv Energy Mater, 2025, 15(2): 2304550 doi: 10.1002/aenm.202304550
[30]
Roshan H, Ravanan F, Sheikhi M H, et al. High-detectivity near-infrared photodetector based on Ag2S nanocrystals. J Alloys Compd, 2021, 852: 156948 doi: 10.1016/j.jallcom.2020.156948
[31]
Mo S P, Huang L L, Zhao X, et al. Hierarchically ordered microporous Ag2S QDs-CoOx/NC nanostructures for enhancing photocatalytic CO2 reduction to chemical fuels. Fuel, 2024, 358: 130113 doi: 10.1016/j.fuel.2023.130113
[32]
Zhang Y, Hong G S, Zhang Y J, et al. Ag2S quantum dot: A bright and biocompatible fluorescent nanoprobe in the second near-infrared window. ACS Nano, 2012, 6(5): 3695 doi: 10.1021/nn301218z
[33]
Zaidi S J A, Zoha S, Ahmad M, et al. Physicochemically tailored Ag2S QDs deposition on ZnO for improved photocatalytic and antibacterial performance. Mater Today Commun, 2023, 37: 107016 doi: 10.1016/j.mtcomm.2023.107016
[34]
Jeong Y J, Kim G B, Kim M J, et al. Improvement in performance and stability of PbS QD/IGZO phototransistors through the introduction of Ga2O3 film for broadband sensor applications. ACS Appl Mater Interfaces, 2024, 16(28): 36527 doi: 10.1021/acsami.4c02346
[35]
Jeong J K, Jeong J H, Yang H W, et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl Phys Lett, 2007, 91(11): 113505 doi: 10.1063/1.2783961
[36]
Kuzum D, Yu S M, Wong H-S P. Synaptic electronics, Materials, devices and applications. Nanotechnology, 2013, 24(38): 382001 doi: 10.1088/0957-4484/24/38/382001
[37]
Hu S G, Liu Y, Chen T P, et al. Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor. Appl Phys Lett, 2013, 102(18): 183510 doi: 10.1063/1.4804374
[38]
Ohno T, Hasegawa T, Tsuruoka T, et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat Mater, 2011, 10(8): 591 doi: 10.1038/nmat3054
[39]
Song J R, Meng J L, Wang T Y, et al. InGaZnO-based photoelectric synaptic devices for neuromorphic computing. J Semicond, 2024, 45(9): 092402 doi: 10.1088/1674-4926/24040038
[40]
Han S S, Ma T, Li H, et al. Photoferroelectric perovskite synapses for neuromorphic computing. Adv Funct Mater, 2024, 34(3): 2309910 doi: 10.1002/adfm.202309910
[41]
Wang W S, Huang X, Huang Y J, et al. Current/voltage dual-modal hybrid ionotronic oxide dendrite transistor for neuromorphic computing. ACS Appl Mater Interfaces, 2025, 17(27): 39732 doi: 10.1021/acsami.5c10311
Fig. 1.  (Color online) (a) Model diagram of the composite-channel device and schematic of its sandwich structure. (b) Schematic band diagrams of the various regions of the device. (c) Schematic diagram illustrating the mechanism of broadband-response Ag2S QDs. (d) AFM morphology image of Ag2S QDs. (e) Comparison of absorption coefficients as a function of wavelength for the Ag2S QDs composite material and pristine IGZO. (f) Comparison of absorption coefficients as a function of photon energy for the Ag2S QDs composite material and pristine IGZO.

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (Color online) (a) Structure and dimensional layout image of Composite-channel device. (b) Transfer characteristics of Composite-channel device and pristine IGZO device. (c) Time-dependent PSC of the composite-channel device under optical illumination at wavelengths of 350, 450, 550, 650, 750, 850, and 950 nm.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) (a) Schematic diagram of the learning (memory)-forgetting curve of the bio-inspired device. (b) Evolution of the PSC of the composite-channel device mimicking the paired-pulse facilitation behavior. (c) Time-current plot showing the transition from short-term to long-term plasticity in the composite-channel device under different numbers of pulses. (d) PSC and PSC retention rate of the composite-channel device under different numbers of pulses. (e)Within four time units, apply single (1000), double (0110), and triple optical pulses (0111). (f) Normalized IDS measurements for all permutations of four-bit optical pulse sequences. (g)−(j) Schematic diagram of the photoelectric synergistic effect for implementing the Pavlovian dog test at different testing stages, along with the PSC changes in the composite-channel device.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) (a) Schematic diagram of the experimental setup for simple pattern recognition and time-dependent PSC response under optical stimulation through a “π”-shaped mask. (b) Schematic diagram of a three-layer ANN for handwritten digit recognition. (c) Comparison of PSC erasure behavior induced by three different pulse sequences of 32 consecutive positive gate voltage pulses at 5 V, 10 V, and 20 V. (d) The PSC erasure effect achieved by 32 consecutive positive gate voltage pulses that increase linearly from 0 V to 20 V. (e) Progression of recognition accuracy in correlation with the number of training epochs. (f) Heat map representation of ΔG vs conductance switching characteristics during potentiation. (g) Heat map representation of ΔG vs conductance switching characteristics during depression.

DownLoad: Full-Size Img PowerPoint
[1]
Wang Z R, Wu H Q, Burr G W, et al. Resistive switching materials for information processing. Nat Rev Mater, 2020, 5(3): 173 doi: 10.1038/s41578-019-0159-3
[2]
Zou X Q, Xu S, Chen X M, et al. Breaking the von Neumann bottleneck: Architecture-level processing-in-memory technology. Sci China Inf Sci, 2021, 64(6): 160404 doi: 10.1007/s11432-020-3227-1
[3]
Zhang W Q, Gao B, Tang J S, et al. Neuro-inspired computing chips. Nat Electron, 2020, 3(7): 371 doi: 10.1038/s41928-020-0435-7
[4]
Le Gallo M, Sebastian A, Mathis R, et al. Mixed-precision in-memory computing. Nat Electron, 2018, 1(4): 246 doi: 10.1038/s41928-018-0054-8
[5]
Mehonic A, Kenyon A J. Brain-inspired computing needs a master plan. Nature, 2022, 604(7905): 255 doi: 10.1038/s41586-021-04362-w
[6]
Xia Q F, Yang J J. Memristive crossbar arrays for brain-inspired computing. Nat Mater, 2019, 18(4): 309 doi: 10.1038/s41563-019-0291-x
[7]
Sun Y L, Wang H P, Xie D. Recent advance in synaptic plasticity modulation techniques for neuromorphic applications. Nano Micro Lett, 2024, 16(1): 211 doi: 10.1007/s40820-024-01445-x
[8]
Citri A, Malenka R C. Synaptic plasticity: Multiple forms, functions, and mechanisms. Neuropsychopharmacology, 2008, 33(1): 18 doi: 10.1038/sj.npp.1301559
[9]
Han C, Han X W, Han J Y, et al. Light-stimulated synaptic transistor with high PPF feature for artificial visual perception system application. Adv Funct Mater, 2022, 32(22): 2113053 doi: 10.1002/adfm.202113053
[10]
Duan X G, Cao Z L, Gao K K, et al. Memristor-based neuromorphic chips. Adv Mater, 2024, 36(14): 2310704 doi: 10.1002/adma.202310704
[11]
Zhang W B, Yao P, Gao B, et al. Edge learning using a fully integrated neuro-inspired memristor chip. Science, 2023, 381(6663): 1205 doi: 10.1126/science.ade3483
[12]
Pillai P B, De Souza M M. Nanoionics-based three-terminal synaptic device using zinc oxide. ACS Appl Mater Interfaces, 2017, 9(2): 1609 doi: 10.1021/acsami.6b13746
[13]
Zhang F Q, Li C Y, Li Z Y, et al. Recent progress in three-terminal artificial synapses based on 2D materials: From mechanisms to applications, Microsyst Nanoeng, 2023, 9: 16
[14]
Park J W, Kang B H, Kim H J. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics. Adv Funct Mater, 2020, 30(20): 1904632 doi: 10.1002/adfm.201904632
[15]
Duan H X, Liang L Y, Wu Z D, et al. IGZO/CsPbBr3-nanoparticles/IGZO neuromorphic phototransistors and their optoelectronic coupling applications. ACS Appl Mater Interfaces, 2021, 13(25): 30165 doi: 10.1021/acsami.1c05396
[16]
Chen H Y, Ren J R, Sun J T, et al. Photoresponse design in metal oxide semiconductor TFTs toward diverse applications: Display drivers, photodetectors, and optoelectronic synapses. ACS Appl Mater Interfaces, 2025, 17(5): 8727 doi: 10.1021/acsami.5c00152
[17]
Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432(7016): 488 doi: 10.1038/nature03090
[18]
Kim M-K, Lee J-S. Synergistic improvement of long-term plasticity in photonic synapses using ferroelectric polarization in hafnia-based oxide-semiconductor transistors. Adv Mater, 2020, 32(12): 1907826 doi: 10.1002/adma.201907826
[19]
Sun J T, Ren J Y, Xiong Y T, et al. Boosted IGZO optoelectronic synaptic performance by mitigating photolithography-induced surface effects. J Semicond, 2026, 47(3): 032402 doi: 10.1088/1674-4926/25080023
[20]
Gao Z X, Ju X, Zhang H Z, et al. InP quantum dots tailored oxide thin film phototransistor for bioinspired visual adaptation. Adv Funct Mater, 2023, 33(52): 2305959 doi: 10.1002/adfm.202305959
[21]
Gao S L, Qiu L P, Zhang J, et al. Persistent photoconductivity of metal oxide semiconductors. ACS Appl Electron Mater, 2024, 6(3): 1542 doi: 10.1021/acsaelm.3c01549
[22]
Arumugam M, Yang H H. A review of the application of wide-bandgap semiconductor photocatalysts for CO2 reduction. J CO2 Util, 2024, 83: 102808 doi: 10.1016/j.jcou.2024.102808
[23]
Zhang Y N, Li L, Lin Y N, et al. Ultra-sensitive broadband photoresponse realized in epitaxial SnSe/InSe/GaN heterojunction for light adaptive artificial optoelectronic synapses. Nano Energy, 2025, 133: 110511 doi: 10.1016/j.nanoen.2024.110511
[24]
Tan H, Ni Z Y, Peng W B, et al. Broadband optoelectronic synaptic devices based on silicon nanocrystals for neuromorphic computing. Nano Energy, 2018, 52: 422 doi: 10.1016/j.nanoen.2018.08.018
[25]
Wang Z B, Li M, Yang H C, et al. Enhancement-mode carbon nanotube optoelectronic synaptic transistors with large and controllable threshold voltage modulation window for broadband flexible vision systems. ACS Nano, 2024, 18(22): 14298 doi: 10.1021/acsnano.4c00166
[26]
Tan F, Chang C L, Zhang N, et al. Physisorption-assistant optoelectronic synaptic transistors based on Ta2NiSe5/SnS2 heterojunction from ultraviolet to near-infrared. Light Sci Appl, 2025, 14: 122 doi: 10.1038/s41377-025-01792-3
[27]
Fan B J, Zhao X Y, Zhang J Q, et al. Monolithically integrating III-nitride quantum structure for full-spectrum white LED via bandgap engineering heteroepitaxial growth. Laser Photonics Rev, 2023, 17(3): 2200455 doi: 10.1002/lpor.202200455
[28]
Ding C P, Huang Y J, Shen Z Y, et al. Synthesis and bioapplications of Ag2S quantum dots with near-infrared fluorescence. Adv Mater, 2021, 33(32): 2007768 doi: 10.1002/adma.202007768
[29]
Shin D, Park Y, Jeong H, et al. Exploring the potential of colloidal quantum dots for near-infrared to short-wavelength infrared applications. Adv Energy Mater, 2025, 15(2): 2304550 doi: 10.1002/aenm.202304550
[30]
Roshan H, Ravanan F, Sheikhi M H, et al. High-detectivity near-infrared photodetector based on Ag2S nanocrystals. J Alloys Compd, 2021, 852: 156948 doi: 10.1016/j.jallcom.2020.156948
[31]
Mo S P, Huang L L, Zhao X, et al. Hierarchically ordered microporous Ag2S QDs-CoOx/NC nanostructures for enhancing photocatalytic CO2 reduction to chemical fuels. Fuel, 2024, 358: 130113 doi: 10.1016/j.fuel.2023.130113
[32]
Zhang Y, Hong G S, Zhang Y J, et al. Ag2S quantum dot: A bright and biocompatible fluorescent nanoprobe in the second near-infrared window. ACS Nano, 2012, 6(5): 3695 doi: 10.1021/nn301218z
[33]
Zaidi S J A, Zoha S, Ahmad M, et al. Physicochemically tailored Ag2S QDs deposition on ZnO for improved photocatalytic and antibacterial performance. Mater Today Commun, 2023, 37: 107016 doi: 10.1016/j.mtcomm.2023.107016
[34]
Jeong Y J, Kim G B, Kim M J, et al. Improvement in performance and stability of PbS QD/IGZO phototransistors through the introduction of Ga2O3 film for broadband sensor applications. ACS Appl Mater Interfaces, 2024, 16(28): 36527 doi: 10.1021/acsami.4c02346
[35]
Jeong J K, Jeong J H, Yang H W, et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl Phys Lett, 2007, 91(11): 113505 doi: 10.1063/1.2783961
[36]
Kuzum D, Yu S M, Wong H-S P. Synaptic electronics, Materials, devices and applications. Nanotechnology, 2013, 24(38): 382001 doi: 10.1088/0957-4484/24/38/382001
[37]
Hu S G, Liu Y, Chen T P, et al. Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor. Appl Phys Lett, 2013, 102(18): 183510 doi: 10.1063/1.4804374
[38]
Ohno T, Hasegawa T, Tsuruoka T, et al. Short-term plasticity and long-term potentiation mimicked in single inorganic synapses. Nat Mater, 2011, 10(8): 591 doi: 10.1038/nmat3054
[39]
Song J R, Meng J L, Wang T Y, et al. InGaZnO-based photoelectric synaptic devices for neuromorphic computing. J Semicond, 2024, 45(9): 092402 doi: 10.1088/1674-4926/24040038
[40]
Han S S, Ma T, Li H, et al. Photoferroelectric perovskite synapses for neuromorphic computing. Adv Funct Mater, 2024, 34(3): 2309910 doi: 10.1002/adfm.202309910
[41]
Wang W S, Huang X, Huang Y J, et al. Current/voltage dual-modal hybrid ionotronic oxide dendrite transistor for neuromorphic computing. ACS Appl Mater Interfaces, 2025, 17(27): 39732 doi: 10.1021/acsami.5c10311

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    Received: 10 June 2026 Revised: 13 July 2026 Online: Accepted Manuscript: 14 September 2026

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      Article Navigation >  Journal of Semiconductors  > 2026  > Accepted Manuscript
      Junchang Wang, Hongyu Chen, Wanlin Zhang, Junyan Ren, Liqiang Zhu, Yiting Cheng, Yuting Xiong, Wangying Xu, Lingyan Liang, Hongtao Cao. Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060020 ****J C Wang, H Y Chen, W L Zhang, J Y Ren, L Q Zhu, Y T Cheng, Y T Xiong, W Y Xu, L Y Liang, and H T Cao, Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060020
      Citation:
      Junchang Wang, Hongyu Chen, Wanlin Zhang, Junyan Ren, Liqiang Zhu, Yiting Cheng, Yuting Xiong, Wangying Xu, Lingyan Liang, Hongtao Cao. Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060020 ****
      J C Wang, H Y Chen, W L Zhang, J Y Ren, L Q Zhu, Y T Cheng, Y T Xiong, W Y Xu, L Y Liang, and H T Cao, Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060020
      shu

      Broadband near-infrared optoelectronic synaptic TFTs enabled by Ag2S QDs/IGZO composite-channels

      DOI: 10.1088/1674-4926/26060020
      CSTR: 32376.14.1674-4926.26060020
      • 1.

        Laboratory of Atomic-scale and Micro & Nano Manufacturing, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, China

      • 2.

        College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences (UCAS), Beijing 100049, China

      • 3.

        School of Physical Science and Technology, Ningbo University, Ningbo 315211 Zhejiang, China

      • 4.

        Department of Physics, School of Science, Jimei University, Xiamen 361021, China

      More Information
      • Junchang Wang received his BS in New Energy Science and Engineering in 2025 from Qingdao University. He is pursuing a master’s degree in Materials Physics & Chemistry at the University of Chinese Academy of Sciences (UCAS). He is currently conducting research on thin-film transistors (TFTs)
      • Junyan Ren received her BS in Materials Chemistry in 2020 from Yunnan University and her MS/PH. D degree in 2025 in Material Physics & Chemistry from Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS). She is currently a postdoctoral researcher at NIMTE, CAS. Her current research focuses on amorphous and nano-crystalline oxide semiconductors and their devices for electronics/optoelectronics
      • Lingyan Liang received her BS in physics in 2003 from Nanjing University and her MS/Ph. D degree in 2008 in Material Physics & Chemistry from Institute of Semiconductor, Chinese Academy of Sciences (CAS). She is currently a professor at Ningbo Institute of Material Technology and Engineering, CAS. Her current research focuses on amorphous and nano-crystalline oxide semiconductors and their devices for electronics/optoelectronics/bioelectronics
      • Corresponding author: renjunyan@nimte.ac.cn; lly@nimte.ac.cn
      • Received Date: 2026-06-10
      • Revised Date: 2026-07-13
        • Available Online: 2026-09-14

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