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Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration

Yuanfang Yu1, §, , Jiaxin Gong2, §, Senyao Tang2, Yuan Gao1, Nanjie Jiang2 and Haiyan Nan1,

+ Author Affiliations

 Corresponding author: Yuanfang Yu, yfyu@jiangnan.edu.cn; Haiyan Nan, jnanhaiyan@jiangnan.edu.cn

DOI: 10.1088/1674-4926/26060030CSTR: 32376.14.1674-4926.26060030

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Abstract: Two-dimensional (2D) van der Waals (vdW) materials offer atomically thin, dangling-bond-free interfaces and strong electrostatic control characteristics, enabling a new paradigm for optoelectronic devices. This review focuses on vdW contact engineering and heterostructure construction. The vdW contact can suppress Fermi-level pinning, reduce contact resistance, and preserve the intrinsic properties of 2D semiconductors. Leveraging such clean interfaces, 2D vdW materials show great potential in implementing functional devices, including photodetectors, miniaturized computational spectrometers, reconfigurable devices, and neuromorphic systems. In these cases, the tunable vdW interfaces eliminate lattice-matching constraints and allow feasible heterogeneous integration. This review discusses the recent progresses and future prospects in this field, providing a guidance for realizing functional applications based on vdW device configuration.

Keywords: two-dimensional materials, van der Waals contacts, heterostructure, photoelectronic devices



[1]
Ma L K, Wang Y L, Liu Y. Van der Waals contact for two-dimensional transition metal dichalcogenides. Chem Rev, 2024, 124(5): 2583 doi: 10.1021/acs.chemrev.3c00697
[2]
Chang T-Y, Chen P-L, Chen P S, et al. Van der Waals heterostructure photodetectors with bias-selectable infrared photoresponses. ACS Appl Mater Interfaces, 2022, 14(28): 32665 doi: 10.1021/acsami.2c06088
[3]
Yin L, Cheng R Q, Ding J H, et al. Two-dimensional semiconductors and transistors for future integrated circuits. ACS Nano, 2024, 18(11): 7739 doi: 10.1021/acsnano.3c10900
[4]
Shen P C, Su C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593(7858): 211 doi: 10.1038/s41586-021-03472-9
[5]
Wang Y, Kim J C, Li Y, et al. P-type electrical contacts for 2D transition-metal dichalcogenides. Nature, 2022, 610(7930): 61 doi: 10.1038/s41586-022-05134-w
[6]
Kong L G, Wu R X, Chen Y, et al. Wafer-scale and universal van der Waals metal semiconductor contact. Nat Commun, 2023, 14: 1014 doi: 10.1038/s41467-023-36715-6
[7]
Liu L T, Kong L G, Li Q Y, et al. Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors. Nat Electron, 2021, 4(5): 342 doi: 10.1038/s41928-021-00566-0
[8]
Liu Y, Liu S, Wang Z Y, et al. Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length. Nat Electron, 2022, 5(9): 579 doi: 10.1038/s41928-022-00808-9
[9]
Liu G Y, Tian Z A, Yang Z Y, et al. Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials. Nat Electron, 2022, 5(5): 275 doi: 10.1038/s41928-022-00764-4
[10]
Bach T P A, Cho S, Kim H, et al. 2D van der Waals heterostructure with tellurene floating-gate for wide range and multi-bit optoelectronic memory. ACS Nano, 2024, 18(5): 4131 doi: 10.1021/acsnano.3c08567
[11]
Chen Y F, Tan C W, Wang Z, et al. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. Sci Adv, 2022, 8(30): eabq1781 doi: 10.1126/sciadv.abq1781
[12]
Wu J F, Zhang J L, Jiang R Q, et al. High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel. Nat Commun, 2025, 16: 564 doi: 10.1038/s41467-025-55887-x
[13]
Wang W X, Jin J Y, Wang Y R, et al. High-speed optoelectronic nonvolatile memory based on van der Waals heterostructures. Small, 2023, 19(47): 2304730 doi: 10.1002/smll.202304730
[14]
Sun X X, Zhu C G, Yi J L, et al. Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device. Nat Electron, 2022, 5(11): 752 doi: 10.1038/s41928-022-00858-z
[15]
Yu J, Wang H, Zhuge F W, et al. Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts. Nat Commun, 2023, 14: 5662 doi: 10.1038/s41467-023-41363-x
[16]
Zhou Y Q, Tong L, Chen Z F, et al. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun, 2023, 14: 4270 doi: 10.1038/s41467-023-39705-w
[17]
Liu Y, Guo J, Zhu E B, et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature, 2018, 557(7707): 696 doi: 10.1038/s41586-018-0129-8
[18]
Zhang X D, Huang C X, Li Z Y, et al. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts. Nat Commun, 2024, 15: 4619 doi: 10.1038/s41467-024-49058-7
[19]
Liu Y Y, Stradins P, Wei S-H. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. Sci Adv, 2016, 2(4): e1600069 doi: 10.1126/sciadv.1600069
[20]
Li J, Wang Z H, Jian J L, et al. Ultrafast self-driven WSe2 photodetectors with bottom Schottky contacts. Adv Sci, 2025, 12(40): e10373 doi: 10.1002/advs.202510373
[21]
Zhou L Y, Qi R X, Nan H Y, et al. Enhanced multifunctional broadband artificial vision through integration of ReS2phototransistors with embedded electrodes. J Mater Chem C, 2025, 13(16): 8274 doi: 10.1039/D5TC00591D
[22]
Xu H Y, Xu Z H, Ren Q Q, et al. Two-dimensional materials for integrated sensing. Nat Mater, 2026: 1
[23]
Leng C Y, Zhang Q Y, Lei S Y, et al. Ultrabroadband SnBi2Te4 photodetectors from visible to terahertz. Adv Mater, 2026, 38(32): e20961 doi: 10.1002/adma.202520961
[24]
Wang Z L, Laboratory N L, et al. Van hove singularity-enhanced Raman scattering and photocurrent generation in twisted monolayer–bilayer graphene. ACS Nano, 2024, 18(36): 25183 doi: 10.1021/acsnano.4c07302
[25]
Pandit B, Bong J, et al. Photodetection mechanisms and ultraviolet–visible imaging characteristics of high-detectivity broadband metal–semiconductor–metal photodetector arrays on wafer-scale monolayer MoS2. ACS Appl Mater Interfaces, 2025, 17(24): 35732 doi: 10.1021/acsami.5c04602
[26]
Ahmad W, Kazmi J, Nawaz M Z, et al. Interface engineering in van der Waals heterostructures: Enhancing photodetector efficiency through structural and functional modifications. Adv Funct Mater, 2026, 36(24): e16893 doi: 10.1002/adfm.202516893
[27]
Fang H, Lu L D, Pan Y T, et al. Infrared high polarization-sensitive and high-responsivity photodetector based on 2D heterojunction bipolar transistor. Adv Opt Mater, 2025, 13(25): e01868 doi: 10.1002/adom.202501868
[28]
Wang F, Zhang T, Xie R Z, et al. How to characterize figures of merit of two-dimensional photodetectors. Nat Commun, 2023, 14: 2224 doi: 10.1038/s41467-023-37635-1
[29]
Li X, Liu Z G, Hu Z Z, et al. Ultrabroadband, self-powered, highly-sensitive photodetector based on Bi2Te3/graphene heterostructure synergistically enhanced with photothermal mechanisms and Au antenna. Adv Funct Mater, 2026, 36(29): e12087 doi: 10.1002/adfm.202512087
[30]
Zhao H, Wang Y, Tang S, et al. Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces. Appl Phys Lett, 2024, 125(3): 033102 doi: 10.1063/5.0218977
[31]
Wang Y F, Lai Z J, Tang S Y, et al. ReS2/MoSe2 van der Waals heterostructure photodetectors for polarization imaging and polarization-encoded optical communication. Small, 2025, 21(34): 2503599 doi: 10.1002/smll.202503599
[32]
Li R Z, Zhang X L, Zhong F, et al. On-chip metasurface-mediated MoTe2 photodetector with electrically tunable polarization-sensitivity. Adv Opt Mater, 2025, 13(9): 2402668 doi: 10.1002/adom.202402668
[33]
Yu Y F, Li Q, Hu J R, et al. Two-dimensional miniature spectrometer with high reconstruction accuracy and small footprint based on Schottky barrier modulation. Adv Funct Mater, 2026, 36(45): e00074 doi: 10.1002/adfm.202600074
[34]
Zhang P, University S, Liu W T, et al. Gate-tunable spectral fingerprint enhancement in heterojunction devices via multi-interface synergistic modulation. Nano Lett, 2026, 26(19): 6441 doi: 10.1021/acs.nanolett.6c01089
[35]
Liu Y, Duan X D, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591(7848): 43 doi: 10.1038/s41586-021-03339-z
[36]
Das S, Sebastian A, Pop E, et al. Transistors based on two-dimensional materials for future integrated circuits. Nat Electron, 2021, 4(11): 786 doi: 10.1038/s41928-021-00670-1
[37]
Sheng Z, Dong J G, Hu W N, et al. Reconfigurable logic-in-memory computing based on a polarity-controllable two-dimensional transistor. Nano Lett, 2023, 23(11): 5242 doi: 10.1021/acs.nanolett.3c01248
[38]
Tsai M Y, Huang C T, Lin C Y, et al. A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping. Nat Electron, 2023, 6(10): 755 doi: 10.1038/s41928-023-01034-7
[39]
Wang Y, Chhowalla M. Making clean electrical contacts on 2D transition metal dichalcogenides. Nat Rev Phys, 2022, 4(2): 101 doi: 10.1038/s42254-021-00389-0
[40]
Nakaharai S, Yamamoto M, Ueno K, et al. Electrostatically reversible polarity of ambipolar α-MoTe2 transistors. ACS Nano, 2015, 9(6): 5976 doi: 10.1021/acsnano.5b00736
[41]
Sasaki T, Ueno K, Taniguchi T, et al. Material and device structure designs for 2D memory devices based on the floating gate voltage trajectory. ACS Nano, 2021, 15(4): 6658 doi: 10.1021/acsnano.0c10005
[42]
Li E L, He W X, Wang R X, et al. Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. Nat Commun, 2025, 16: 9382 doi: 10.1038/s41467-025-64387-x
[43]
Yu Y F, Tang S Y, Jiang N J, et al. Dual-mode switchable and reconfigurable Van der Waals phototransistor for multi-state image encryption. Light Sci Appl, 2026, 15: 299 doi: 10.1038/s41377-026-02358-7
[44]
Kang J Z, Lee H, et al. Non-volatile reconfigurable four-mode van der Waals transistors and transformable logic circuits. ACS Nano, 2025, 19(13): 12948 doi: 10.1021/acsnano.4c16862
[45]
Ma Z N, University H N, Yuan P Z, et al. Optoelectronic reconfigurable logic gates based on two-dimensional vertical field-effect transistors. Nano Lett, 2024, 24(44): 14058 doi: 10.1021/acs.nanolett.4c04034
[46]
Seo S, Kang B S, Lee J J, et al. Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition. Nat Commun, 2020, 11: 3936 doi: 10.1038/s41467-020-17849-3
[47]
Xu L, Liu J L, Guo X R, et al. Ultrasensitive dim-light neuromorphic vision sensing via momentum-conserved reconfigurable van der Waals heterostructure. Nat Commun, 2024, 15: 9011 doi: 10.1038/s41467-024-53268-4
[48]
Fu X, Li T X, Cai B, et al. Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light Sci Appl, 2023, 12: 39 doi: 10.1038/s41377-023-01079-5
Fig. 1.  (Color online) Structural characteristics schematic of 3D semiconductors (a) and 2D semiconductors (b). c, Transferred metal electrode onto 2D material. d, Evaporated electrodes onto 2D materials.

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Fig. 2.  (Color online) Schematic of the fabrication process for vertical field-effect transistor using vdW metal electrode.

DownLoad: Full-Size Img PowerPoint
Fig. 3.  (Color online) Schematic of the fabrication process of 2D devices with bottom-embedded electrodes. The processes include substrate cleaning, spin-coating photoresist, electrode patterning, plasma etching, thermal evaporation/photoresist lift-off, and materials transfer.

DownLoad: Full-Size Img PowerPoint
Fig. 4.  (Color online) The device schematic diagram (a), polarization imaging (top panel in b) and polarization-encoded optical communication (bottom panel in b) of ReS2/MoSe2 vdW heterostructure photodetector[31]. The device schematic diagram (c), concept of electrically-tunable polarization characteristics (d), the optical image of the device (e), angle-dependent polarization photocurrent (f), and electrically tunable polarization-sensitivity (g) of metallic grating mediated MoTe2-based detector[32].

DownLoad: Full-Size Img PowerPoint
Fig. 5.  (Color online) Mechanism schematic diagram of 2D miniature spectrometer based on Schottky barrier modulation (a), TEM image of transferred/evaporated electrodes on WS2 (b), and monochromatic light reconstruction (c) of Schottky junction-based WS2 spectrometer[33]. Schematic diagram of multi-interface synergistic modulation in heterojunction miniature spectrometer device (d) and application demonstration of the multi-interface device for olive oil adulteration identification (e). The inset at top right in (e) shows transmission spectra of olive oil/soybean oil mixtures with different mixing ratios, and sample-dependent transfer curves recorded from the WSe2/MoSe2 device. The inset at bottom in (e) displays the classification matrices of four devices for distinguishing different adulteration ratios[34].

DownLoad: Full-Size Img PowerPoint
Fig. 6.  (Color online) a, Reconfigurable polarized transistors based on ambipolar α-phase molybdenum ditelluride (α-MoTe2) for safety logic[40]. b, Light-induced doped 2D transistors based on MoTe2, WSe2 and MoS2 channel devices[41]. c, Integrated 2D ferroelectric transistors based on n-type MoS2 and p-type BP FeFETs for sensing, storage and computing[42]. d, Dual-mode Switchable and Reconfigurable Van der Waals Phototransistor based on PtTe2/WS2 heterojunction for Multi-state Image Encryption[43]. e, Reconfigurable 2D Schottky Junction Field-Effect Transistor based on WSe2, WTe2 and multilayer graphene[16]. f, 2D vdW transistors based on MoTe2 and CuInP2S6 (CIPS) for fuzzy logic[44].

DownLoad: Full-Size Img PowerPoint
Fig. 7.  (Color online) 2D vdW neuromorphic devices from synaptic emulation to integrated sensing-memory-computing. a, Hardware neural network based on WSe2/MoS2 hybrid synapse[46]. b, MAPbI3/Bi2O2Se heterostructure array integrated with YOLOv4 object detection network for dim-light traffic-light detection[47]. c, Graphene/MoS2-xOx/graphene photomemristor with tunable non-volatile responsivities[48].

DownLoad: Full-Size Img PowerPoint

Table 1.   Multidimensional comparison of transferred and evaporated electrodes for 2D vdW devices.

Transferred electrodeEvaporated electrode
Contact typeVan der Waals contactChemical-bonded contact
Interface qualityClean, minimal interfacial defectsProne to trap states and interface defects
Process-induced damageLow damageDamage 2D lattices
Fabrication complexitySimpleComplicated
Alignment precisionModerateHigh
Wafer-level integrationLimitedGood
DownLoad: CSV
[1]
Ma L K, Wang Y L, Liu Y. Van der Waals contact for two-dimensional transition metal dichalcogenides. Chem Rev, 2024, 124(5): 2583 doi: 10.1021/acs.chemrev.3c00697
[2]
Chang T-Y, Chen P-L, Chen P S, et al. Van der Waals heterostructure photodetectors with bias-selectable infrared photoresponses. ACS Appl Mater Interfaces, 2022, 14(28): 32665 doi: 10.1021/acsami.2c06088
[3]
Yin L, Cheng R Q, Ding J H, et al. Two-dimensional semiconductors and transistors for future integrated circuits. ACS Nano, 2024, 18(11): 7739 doi: 10.1021/acsnano.3c10900
[4]
Shen P C, Su C, Lin Y X, et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature, 2021, 593(7858): 211 doi: 10.1038/s41586-021-03472-9
[5]
Wang Y, Kim J C, Li Y, et al. P-type electrical contacts for 2D transition-metal dichalcogenides. Nature, 2022, 610(7930): 61 doi: 10.1038/s41586-022-05134-w
[6]
Kong L G, Wu R X, Chen Y, et al. Wafer-scale and universal van der Waals metal semiconductor contact. Nat Commun, 2023, 14: 1014 doi: 10.1038/s41467-023-36715-6
[7]
Liu L T, Kong L G, Li Q Y, et al. Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors. Nat Electron, 2021, 4(5): 342 doi: 10.1038/s41928-021-00566-0
[8]
Liu Y, Liu S, Wang Z Y, et al. Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length. Nat Electron, 2022, 5(9): 579 doi: 10.1038/s41928-022-00808-9
[9]
Liu G Y, Tian Z A, Yang Z Y, et al. Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials. Nat Electron, 2022, 5(5): 275 doi: 10.1038/s41928-022-00764-4
[10]
Bach T P A, Cho S, Kim H, et al. 2D van der Waals heterostructure with tellurene floating-gate for wide range and multi-bit optoelectronic memory. ACS Nano, 2024, 18(5): 4131 doi: 10.1021/acsnano.3c08567
[11]
Chen Y F, Tan C W, Wang Z, et al. Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection. Sci Adv, 2022, 8(30): eabq1781 doi: 10.1126/sciadv.abq1781
[12]
Wu J F, Zhang J L, Jiang R Q, et al. High-sensitivity, high-speed, broadband mid-infrared photodetector enabled by a van der Waals heterostructure with a vertical transport channel. Nat Commun, 2025, 16: 564 doi: 10.1038/s41467-025-55887-x
[13]
Wang W X, Jin J Y, Wang Y R, et al. High-speed optoelectronic nonvolatile memory based on van der Waals heterostructures. Small, 2023, 19(47): 2304730 doi: 10.1002/smll.202304730
[14]
Sun X X, Zhu C G, Yi J L, et al. Reconfigurable logic-in-memory architectures based on a two-dimensional van der Waals heterostructure device. Nat Electron, 2022, 5(11): 752 doi: 10.1038/s41928-022-00858-z
[15]
Yu J, Wang H, Zhuge F W, et al. Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts. Nat Commun, 2023, 14: 5662 doi: 10.1038/s41467-023-41363-x
[16]
Zhou Y Q, Tong L, Chen Z F, et al. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun, 2023, 14: 4270 doi: 10.1038/s41467-023-39705-w
[17]
Liu Y, Guo J, Zhu E B, et al. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions. Nature, 2018, 557(7707): 696 doi: 10.1038/s41586-018-0129-8
[18]
Zhang X D, Huang C X, Li Z Y, et al. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts. Nat Commun, 2024, 15: 4619 doi: 10.1038/s41467-024-49058-7
[19]
Liu Y Y, Stradins P, Wei S-H. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier. Sci Adv, 2016, 2(4): e1600069 doi: 10.1126/sciadv.1600069
[20]
Li J, Wang Z H, Jian J L, et al. Ultrafast self-driven WSe2 photodetectors with bottom Schottky contacts. Adv Sci, 2025, 12(40): e10373 doi: 10.1002/advs.202510373
[21]
Zhou L Y, Qi R X, Nan H Y, et al. Enhanced multifunctional broadband artificial vision through integration of ReS2phototransistors with embedded electrodes. J Mater Chem C, 2025, 13(16): 8274 doi: 10.1039/D5TC00591D
[22]
Xu H Y, Xu Z H, Ren Q Q, et al. Two-dimensional materials for integrated sensing. Nat Mater, 2026: 1
[23]
Leng C Y, Zhang Q Y, Lei S Y, et al. Ultrabroadband SnBi2Te4 photodetectors from visible to terahertz. Adv Mater, 2026, 38(32): e20961 doi: 10.1002/adma.202520961
[24]
Wang Z L, Laboratory N L, et al. Van hove singularity-enhanced Raman scattering and photocurrent generation in twisted monolayer–bilayer graphene. ACS Nano, 2024, 18(36): 25183 doi: 10.1021/acsnano.4c07302
[25]
Pandit B, Bong J, et al. Photodetection mechanisms and ultraviolet–visible imaging characteristics of high-detectivity broadband metal–semiconductor–metal photodetector arrays on wafer-scale monolayer MoS2. ACS Appl Mater Interfaces, 2025, 17(24): 35732 doi: 10.1021/acsami.5c04602
[26]
Ahmad W, Kazmi J, Nawaz M Z, et al. Interface engineering in van der Waals heterostructures: Enhancing photodetector efficiency through structural and functional modifications. Adv Funct Mater, 2026, 36(24): e16893 doi: 10.1002/adfm.202516893
[27]
Fang H, Lu L D, Pan Y T, et al. Infrared high polarization-sensitive and high-responsivity photodetector based on 2D heterojunction bipolar transistor. Adv Opt Mater, 2025, 13(25): e01868 doi: 10.1002/adom.202501868
[28]
Wang F, Zhang T, Xie R Z, et al. How to characterize figures of merit of two-dimensional photodetectors. Nat Commun, 2023, 14: 2224 doi: 10.1038/s41467-023-37635-1
[29]
Li X, Liu Z G, Hu Z Z, et al. Ultrabroadband, self-powered, highly-sensitive photodetector based on Bi2Te3/graphene heterostructure synergistically enhanced with photothermal mechanisms and Au antenna. Adv Funct Mater, 2026, 36(29): e12087 doi: 10.1002/adfm.202512087
[30]
Zhao H, Wang Y, Tang S, et al. Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces. Appl Phys Lett, 2024, 125(3): 033102 doi: 10.1063/5.0218977
[31]
Wang Y F, Lai Z J, Tang S Y, et al. ReS2/MoSe2 van der Waals heterostructure photodetectors for polarization imaging and polarization-encoded optical communication. Small, 2025, 21(34): 2503599 doi: 10.1002/smll.202503599
[32]
Li R Z, Zhang X L, Zhong F, et al. On-chip metasurface-mediated MoTe2 photodetector with electrically tunable polarization-sensitivity. Adv Opt Mater, 2025, 13(9): 2402668 doi: 10.1002/adom.202402668
[33]
Yu Y F, Li Q, Hu J R, et al. Two-dimensional miniature spectrometer with high reconstruction accuracy and small footprint based on Schottky barrier modulation. Adv Funct Mater, 2026, 36(45): e00074 doi: 10.1002/adfm.202600074
[34]
Zhang P, University S, Liu W T, et al. Gate-tunable spectral fingerprint enhancement in heterojunction devices via multi-interface synergistic modulation. Nano Lett, 2026, 26(19): 6441 doi: 10.1021/acs.nanolett.6c01089
[35]
Liu Y, Duan X D, Shin H J, et al. Promises and prospects of two-dimensional transistors. Nature, 2021, 591(7848): 43 doi: 10.1038/s41586-021-03339-z
[36]
Das S, Sebastian A, Pop E, et al. Transistors based on two-dimensional materials for future integrated circuits. Nat Electron, 2021, 4(11): 786 doi: 10.1038/s41928-021-00670-1
[37]
Sheng Z, Dong J G, Hu W N, et al. Reconfigurable logic-in-memory computing based on a polarity-controllable two-dimensional transistor. Nano Lett, 2023, 23(11): 5242 doi: 10.1021/acs.nanolett.3c01248
[38]
Tsai M Y, Huang C T, Lin C Y, et al. A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping. Nat Electron, 2023, 6(10): 755 doi: 10.1038/s41928-023-01034-7
[39]
Wang Y, Chhowalla M. Making clean electrical contacts on 2D transition metal dichalcogenides. Nat Rev Phys, 2022, 4(2): 101 doi: 10.1038/s42254-021-00389-0
[40]
Nakaharai S, Yamamoto M, Ueno K, et al. Electrostatically reversible polarity of ambipolar α-MoTe2 transistors. ACS Nano, 2015, 9(6): 5976 doi: 10.1021/acsnano.5b00736
[41]
Sasaki T, Ueno K, Taniguchi T, et al. Material and device structure designs for 2D memory devices based on the floating gate voltage trajectory. ACS Nano, 2021, 15(4): 6658 doi: 10.1021/acsnano.0c10005
[42]
Li E L, He W X, Wang R X, et al. Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. Nat Commun, 2025, 16: 9382 doi: 10.1038/s41467-025-64387-x
[43]
Yu Y F, Tang S Y, Jiang N J, et al. Dual-mode switchable and reconfigurable Van der Waals phototransistor for multi-state image encryption. Light Sci Appl, 2026, 15: 299 doi: 10.1038/s41377-026-02358-7
[44]
Kang J Z, Lee H, et al. Non-volatile reconfigurable four-mode van der Waals transistors and transformable logic circuits. ACS Nano, 2025, 19(13): 12948 doi: 10.1021/acsnano.4c16862
[45]
Ma Z N, University H N, Yuan P Z, et al. Optoelectronic reconfigurable logic gates based on two-dimensional vertical field-effect transistors. Nano Lett, 2024, 24(44): 14058 doi: 10.1021/acs.nanolett.4c04034
[46]
Seo S, Kang B S, Lee J J, et al. Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition. Nat Commun, 2020, 11: 3936 doi: 10.1038/s41467-020-17849-3
[47]
Xu L, Liu J L, Guo X R, et al. Ultrasensitive dim-light neuromorphic vision sensing via momentum-conserved reconfigurable van der Waals heterostructure. Nat Commun, 2024, 15: 9011 doi: 10.1038/s41467-024-53268-4
[48]
Fu X, Li T X, Cai B, et al. Graphene/MoS2−xOx/graphene photomemristor with tunable non-volatile responsivities for neuromorphic vision processing. Light Sci Appl, 2023, 12: 39 doi: 10.1038/s41377-023-01079-5

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    Received: 15 June 2026 Revised: 23 July 2026 Online: Accepted Manuscript: 17 September 2026

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      Yuanfang Yu, Jiaxin Gong, Senyao Tang, Yuan Gao, Nanjie Jiang, Haiyan Nan. Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060030 ****Y F Yu, J X Gong, S Y Tang, Y Gao, N J Jiang, and H Y Nan, Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060030
      Citation:
      Yuanfang Yu, Jiaxin Gong, Senyao Tang, Yuan Gao, Nanjie Jiang, Haiyan Nan. Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration[J]. Journal of Semiconductors, 2026, In Press. doi: 10.1088/1674-4926/26060030 ****
      Y F Yu, J X Gong, S Y Tang, Y Gao, N J Jiang, and H Y Nan, Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration[J]. J. Semicond., 2026, accepted doi: 10.1088/1674-4926/26060030
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      Functional photoelectronic devices: leveraging two-dimensional van der Waals device configuration

      DOI: 10.1088/1674-4926/26060030
      CSTR: 32376.14.1674-4926.26060030
      • 1.

        Jiangsu Provincial Key Laboratory of MEMS Sensors and ASIC Manufacturing Technology, School of Integrated Circuits, Jiangnan University, Wuxi 214401, China

      • 2.

        State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

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