One Electron, One Memory State

Shushen Li

doi:10.1088/1674-4926/26070031

J. Semicond. > Just Accepted

EDITORIAL

One Electron, One Memory State

Shushen Li

+ Author Affiliations

DOI: 10.1088/1674-4926/26070031CSTR: 32376.14.1674-4926.26070031

References

[1]	D. Kahng, S. M. Sze, A floating gate and its application to memory devices. The Bell System Technical Journal 46, 1288-1295 (1967).
[2]	P. Pavan, R. Bez, P. Olivo, E. Zanoni, Flash memory cells-an overview. Proceedings of the IEEE 85, 1248-1271 (2002).
[3]	K. Yano et al. , Single-electron memory for giga-to-tera bit storage. Proceedings of the IEEE 87, 633-651 (2002).
[4]	H. -T. Lue et al. , in 2008 IEEE International Reliability Physics Symposium. (IEEE, 2008), pp. 693-694.
[5]	H. -T. Lue et al. , in 2009 IEEE International Electron Devices Meeting (IEDM). (IEEE, 2009), pp. 1-4.
[6]	Chunsen Liu, Yutong Xiang, Chong Wang and Peng Zhou, "Robust single-electron memory with quantum states manipulation," Science, 16 July 2026.

Fig. 1. Comparison of HBM DRAM, flash memory and the proposed single-electron memory in terms of store electrons, threshold-voltage shift of one electron, and program energy.

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[1]	D. Kahng, S. M. Sze, A floating gate and its application to memory devices. The Bell System Technical Journal 46, 1288-1295 (1967).
[2]	P. Pavan, R. Bez, P. Olivo, E. Zanoni, Flash memory cells-an overview. Proceedings of the IEEE 85, 1248-1271 (2002).
[3]	K. Yano et al. , Single-electron memory for giga-to-tera bit storage. Proceedings of the IEEE 87, 633-651 (2002).
[4]	H. -T. Lue et al. , in 2008 IEEE International Reliability Physics Symposium. (IEEE, 2008), pp. 693-694.
[5]	H. -T. Lue et al. , in 2009 IEEE International Electron Devices Meeting (IEDM). (IEEE, 2009), pp. 1-4.
[6]	Chunsen Liu, Yutong Xiang, Chong Wang and Peng Zhou, "Robust single-electron memory with quantum states manipulation," Science, 16 July 2026.