Citation: |
Chen Yu, Huang Lirong, Zhu Shanshan. Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity[J]. Journal of Semiconductors, 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005
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Chen Y, Huang L R, Zhu S S. Monolithic white LED based on AlxGaN1-x/InyGa1-yN DBR resonant-cavity[J]. J. Semicond., 2009, 30(1): 014005. doi: 10.1088/1674-4926/30/1/014005.
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Monolithic white LED based on AlxGa1-xN/InyGa1-yN DBR resonant-cavity
DOI: 10.1088/1674-4926/30/1/014005
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Abstract
A monolithic white light-emitting diode (LED) with blue and yellow light active regions has been designed and studied. With the AlGaN/InGaN distributed Bragg reflector (DBR) resonant-cavity, the extraction efficiency and power of the yellow light are enhanced so that high quality white light can be obtained.
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References
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