Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

Liu Naixin; Wang Junxi; Yan Jianchang; Liu Zhe; Ruan Jun; Li Jinmin

doi:10.1088/1674-4926/30/11/113003

J. Semicond. > 2009, Volume 30 > Issue 11 > 113003

SEMICONDUCTOR MATERIALS

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

Liu Naixin, Wang Junxi, Yan Jianchang, Liu Zhe, Ruan Jun and Li Jinmin

+ Author Affiliations

DOI: 10.1088/1674-4926/30/11/113003

Abstract: We have demonstrated the growth of quaternary AlInGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition (MOCVD). The optical properties of the samples have been investigated by photoluminescence (PL) at different temperatures. The results show that the sample grown at higher temperature (850 ℃) exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AlInGaN exhibited three-dimensional (3D) growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AlInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells (MQWs) with AlInGaN barriers. The peak wavelength for the InGaN/AlInGaN-MQW based light emitting diodes (LEDs) was very stable at various injection current levels because of the polarization-matched InGaN/AlInGaN MQWs.

Key words: AlInGaN, UV-LEDs, MOCVD

1	A 2DEG charge density based drain current model for various Al and In molefraction mobility dependent nano-scale AlInGaN/AlN/GaN HEMT devices Godwin Raj, Hemant Pardeshi, Sudhansu Kumar Pati, N Mohankumar, Chandan Kumar Sarkar, et al. Journal of Semiconductors, 2013, 34(4): 044002. doi: 10.1088/1674-4926/34/4/044002
2	Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD Tao Zhikuo, Zhang Rong, Xiu Xiangqian, Cui Xugao, Li Li, et al. Journal of Semiconductors, 2012, 33(7): 073002. doi: 10.1088/1674-4926/33/7/073002
3	High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system Yin Haibo, Wang Xiaoliang, Ran Junxue, Hu Guoxin, Zhang Lu, et al. Journal of Semiconductors, 2011, 32(3): 033002. doi: 10.1088/1674-4926/32/3/033002
4	Finite element analysis of the temperature field in a vertical MOCVD reactor by induction heating Li Zhiming, Xu Shengrui, Zhang Jincheng, Chang Yongming, Ni Jingyu, et al. Journal of Semiconductors, 2009, 30(11): 113004. doi: 10.1088/1674-4926/30/11/113004
5	Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, et al. Journal of Semiconductors, 2008, 29(6): 1177-1179.
6	Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, et al. Journal of Semiconductors, 2008, 29(8): 1475-1478.
7	Growth of High-Quality InP-on-GaAs Quasi-Substrates Using Double Low-Temperature Buffers and Strained Layer Surperlattices by MOCVD Zhou Jing, Ren Xiaomin, Huang Yongqing, Wang Qi Journal of Semiconductors, 2008, 29(10): 1855-1859.
8	Epitaxial Growth of Atomically Flat AlN Layers on Sapphire Substrate by Metal Organic Chemical Vapor Deposition Zhao Hong, Zou Zeya, Zhao Wenbai, Liu Ting, Yang Xiaobo, et al. Chinese Journal of Semiconductors , 2007, 28(10): 1568-1573.
9	AIGaN-Based Multi-Type Distributed Bragg Reflectors Grown by MOCVD Liu Bin, Zhang Rong, Xie Zili, Ji Xiaoli, Li Liang, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 492-495.
10	Numerical Simulation of Gas Phase and Surface Reaction for Growth of GaN by MOCVD Gao Lihua, Yang Yunke, Chen Haixin, Fu Song Chinese Journal of Semiconductors , 2007, 28(S1): 245-248.
11	Growth of High AI Content AIGaN Epilayer by MOCVD Wang Xiaoyan, Wang Xiaoliang, Hu Guoxin, Wang Baozhu, Li Jianping, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 193-196.
12	Growth and Characterization of m Plane GaN Material by MOCVD Xie Zili, Zhang Rong, Han Ping, Liu Chengxiang, Xiu XiangQian, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 249-252.
13	Simulation of the ZnO-MOCVD Horizontal Reactor Geometry Liu Songmin, Gu Shulin, Zhu Shunming, Ye Jiandong, Liu Wei, et al. Chinese Journal of Semiconductors , 2007, 28(S1): 309-311.
14	Research on Optimizing Barrier Material for AlInGaN Quantum Wells Wen Feng, Liu Deming, Huang Lirong Chinese Journal of Semiconductors , 2007, 28(6): 893-897.
15	Influence of Wall Properties on Wall Temperature of a Radial Flow MOCVD Reactor with Three Separate Vertical Inlets Liu Yong, Nie Yuhong, Yao Shouguang Chinese Journal of Semiconductors , 2007, 28(6): 913-917.
16	Wall Temperature Simulation of a Radial Flow MOCVD Reactor with Three-Separate Vertical Inlets Nie Yuhong, Liu Yong, Yao Shouguang Chinese Journal of Semiconductors , 2007, 28(1): 127-130.
17	MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC Wang Xiaoliang, Hu Guoxin, Ma Zhiyong, Xiao Hongling, Wang Cuimei, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1521-1525.
18	High Resistivity GaN Film Grown by MOCVD Fang Cebao, Wang Xiaoliang, Liu Chao, Hu Guoxin, Wang Junxi, et al. Chinese Journal of Semiconductors , 2005, 26(S1): 91-93.
19	ZnO Thin Film Growth by Metal Organic Chemical Vapor Deposition and Its Back Contact Application in Solar Cells Chen Xinliang, Xu Buheng, Xue Junming, Zhao Ying, Zhang Xiaodan, et al. Chinese Journal of Semiconductors , 2005, 26(12): 2363-2368.
20	Growth of Space Ordered 1.3μm InAs Quantum Dots on GaAs(100) Vicinal Substrates by MOCVD Liang Song, Zhu Hongliang, Pan Jiaoqing, Wang Wei Chinese Journal of Semiconductors , 2005, 26(11): 2074-2079.

Search

GET CITATION

Liu Naixin, Wang Junxi, Yan Jianchang, Liu Zhe, Ruan Jun, Li Jinmin. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD[J]. Journal of Semiconductors, 2009, 30(11): 113003. doi: 10.1088/1674-4926/30/11/113003

Liu N X, Wang J X, Yan J C, Liu Z, Ruan J, Li J M. Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD[J]. J. Semicond., 2009, 30(11): 113003. doi: 10.1088/1674-4926/30/11/113003.

Export: BibTex EndNote

Article Metrics

Article views: 4741 Times PDF downloads: 2615 Times Cited by: 0 Times

History

Received: 18 August 2015 Revised: 19 June 2009 Online: Published: 01 November 2009

We have demonstrated the growth of quaternary AlInGaN compounds at different growth temperatures and pressures with metalorganic chemical vapor deposition (MOCVD). The optical properties of the samples have been investigated by photoluminescence (PL) at different temperatures. The results show that the sample grown at higher temperature (850 ℃) exhibits the best optical quality for its sharp band edge luminescence and weak yellow luminescence. The AlInGaN exhibited three-dimensional (3D) growth mode at higher pressure. The band edge emission almost disappeared. With the optimization of AlInGaN growth parameters, we replaced the traditional barrier in InGaN/GaN multiple quantum wells (MQWs) with AlInGaN barriers. The peak wavelength for the InGaN/AlInGaN-MQW based light emitting diodes (LEDs) was very stable at various injection current levels because of the polarization-matched InGaN/AlInGaN MQWs.

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

DOI: 10.1088/1674-4926/30/11/113003

Abstract

References

Proportional views

Catalog

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Characterization of quaternary AlInGaN epilayers and polarization-reduced InGaN/AlInGaN MQWgrown by MOCVD

DOI: 10.1088/1674-4926/30/11/113003

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content