J. Semicond. > 2009, Volume 30 > Issue 11 > 114001
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SEMICONDUCTOR DEVICES

InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

Yu Jinyong, Liu Xinyu and Xia Yang

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DOI: 10.1088/1674-4926/30/11/114001

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Abstract: Several μ-bridge structures for InP-based heterojunction bipolar transistors (HBTs) are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double μ-bridge structures have a better effect. Due to the utilization of the double μ-bridges, both the cutoff frequency fT and also the maximum oscillation frequency fmax of the 2 × 12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz. The results also show that the μ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

Key words: InP,  HBT,  μ-bridge

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    Received: 18 August 2015 Revised: 26 June 2009 Online: Published: 01 November 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(11): 114001
      Yu Jinyong, Liu Xinyu, Xia Yang. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001 ****Yu J Y, Liu X Y, Xia Y. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. J. Semicond., 2009, 30(11): 114001. doi:  10.1088/1674-4926/30/11/114001.
      Citation:
      Yu Jinyong, Liu Xinyu, Xia Yang. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. Journal of Semiconductors, 2009, 30(11): 114001. doi: 10.1088/1674-4926/30/11/114001 ****
      Yu J Y, Liu X Y, Xia Y. InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures[J]. J. Semicond., 2009, 30(11): 114001. doi:  10.1088/1674-4926/30/11/114001.
      shu

      InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

      DOI: 10.1088/1674-4926/30/11/114001

      • Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-27
      • Revised Date: 2009-06-26
      • Published Date: 2009-10-29

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