Single-mode GaAs/AlGaAs quantum cascade microlasers

Gao Yu; Liu Junqi; Liu Fengqi; Zhang Wei; Zhang Quande; Liu Wanfeng; Li Lu; Wang Lijun; Wang Zhanguo

doi:10.1088/1674-4926/30/11/114007

Article Navigation > Journal of Semiconductors > 2009 > 30(11): 114007

Gao Yu, Liu Junqi, Liu Fengqi, Zhang Wei, Zhang Quande, Liu Wanfeng, Li Lu, Wang Lijun, Wang Zhanguo. Single-mode GaAs/AlGaAs quantum cascade microlasers[J]. Journal of Semiconductors, 2009, 30(11): 114007. doi: 10.1088/1674-4926/30/11/114007 ****Gao Y, Liu J Q, Liu F Q, Zhang W, Zhang Quande, Liu W F, Li L, Wang L J, Wang Z G. Single-mode GaAs/AlGaAs quantum cascade microlasers[J]. J. Semicond., 2009, 30(11): 114007. doi: 10.1088/1674-4926/30/11/114007.

Citation:

Gao Yu, Liu Junqi, Liu Fengqi, Zhang Wei, Zhang Quande, Liu Wanfeng, Li Lu, Wang Lijun, Wang Zhanguo. Single-mode GaAs/AlGaAs quantum cascade microlasers[J]. Journal of Semiconductors, 2009, 30(11): 114007. doi: 10.1088/1674-4926/30/11/114007 ****

Gao Y, Liu J Q, Liu F Q, Zhang W, Zhang Quande, Liu W F, Li L, Wang L J, Wang Z G. Single-mode GaAs/AlGaAs quantum cascade microlasers[J]. J. Semicond., 2009, 30(11): 114007. doi: 10.1088/1674-4926/30/11/114007.

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Single-mode GaAs/AlGaAs quantum cascade microlasers

DOI: 10.1088/1674-4926/30/11/114007

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received Date: 2015-08-18
Accepted Date: 2009-04-29
Revised Date: 2009-06-02
Published Date: 2009-10-29

Abstract

Abstract

Single-mode edge emitting GaAs/AlGaAs quantum cascade microlasers at a wavelength of about 11.4 μm were realized by shortening the Fabry-Perot cavity length. The spacing of the longitudinal resonator modes is inversely proportional to the cavity length. Stable single-mode emission with a side mode suppression ratio of about 19 dB at 85 K for a 150-μm-long device was demonstrated.
- quantum cascade lasers,
- GaAs/AlGaAs,
- single-mode emission,
- short cavity length

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Single-mode GaAs/AlGaAs quantum cascade microlasers

DOI: 10.1088/1674-4926/30/11/114007

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