SEMICONDUCTOR DEVICES
Abstract: Research into new pH sensors fabricated by the standard CMOS process is currently a hot topic. The new pH sensing multi-floating gate field effect transistor is found to have a very large threshold voltage, which is different from the normal ion-sensitive field effect transistor. After analyzing all the interface layers of the structure, a new sensitive model based on the Gauss theorem and the charge neutrality principle is created in this paper. According to the model, the charge trapped on the multi-floating gate during the process and the thickness of the sensitive layer are the main causes of the large threshold voltage. From this model, it is also found that removing the charge on the multi-floating gate is an effective way to decrease the threshold voltage. The test results for three different standard pH buffer solutions show the correctness of the model and point the way to solve the large threshold problem.
Key words: pH sensor
| 1 |
Zhijie Wang Journal of Semiconductors, 2019, 40(1): 010201. doi: 10.1088/1674-4926/40/1/010201 |
| 2 |
Advances in flexible and wearable pH sensors for wound healing monitoring Mei Qin, Hao Guo, Zhang Dai, Xu Yan, Xin Ning, et al. Journal of Semiconductors, 2019, 40(11): 111607. doi: 10.1088/1674-4926/40/11/111607 |
| 3 |
Ultrathin free-standing graphene oxide film based flexible touchless sensor Lin Liu, Yingyi Wang, Guanghui Li, Sujie Qin, Ting Zhang, et al. Journal of Semiconductors, 2018, 39(1): 013002. doi: 10.1088/1674-4926/39/1/013002 |
| 4 |
Surface acoustic wave devices for sensor applications Bo Liu, Xiao Chen, Hualin Cai, Mohammad Ali Mohammad, Xiangguang Tian, et al. Journal of Semiconductors, 2016, 37(2): 021001. doi: 10.1088/1674-4926/37/2/021001 |
| 5 |
Resistive humidity sensor based on vanadium complex films Kh. S. Karimov, M. Saleem, M. Mahroof-Tahir, R. Akram, M.T. Saeed Chanee, et al. Journal of Semiconductors, 2014, 35(9): 094001. doi: 10.1088/1674-4926/35/9/094001 |
| 6 |
A CMOS AC/DC charge pump for a wireless sensor network Zhang Qiang, Ni Weining, Shi Yin, Yu Yude Journal of Semiconductors, 2012, 33(10): 105003. doi: 10.1088/1674-4926/33/10/105003 |
| 7 |
Surface-type humidity sensor based on cellulose-PEPC for telemetry systems Kh. S. Karimov, M. Saleem, T. A. Qasuria, M. Farooq Journal of Semiconductors, 2011, 32(1): 015005. doi: 10.1088/1674-4926/32/1/015005 |
| 8 |
An A/D interface based on Σ Δ modulator for thermal vacuum sensor ASICs Li Jinfeng, Tang Zhen'an Journal of Semiconductors, 2010, 31(7): 075008. doi: 10.1088/1674-4926/31/7/075008 |
| 9 |
Ag/PEPC/NiPc/ZnO/Ag thin film capacitive and resistive humidity sensors Kh. S. Karimov, Kuan Yew Cheong, M. Saleem, Imran Murtaza, M. Farooq, et al. Journal of Semiconductors, 2010, 31(5): 054002. doi: 10.1088/1674-4926/31/5/054002 |
| 10 |
A novel SOI MOSFET electrostatic field sensor Chen Xin'an, Huang Qing'an Journal of Semiconductors, 2010, 31(4): 045003. doi: 10.1088/1674-4926/31/4/045003 |
| 11 |
MEMS magnetic field sensor based on silicon bridge structure Du Guangtao, Chen Xiangdong, Lin Qibin, Li Hui, Guo Huihui, et al. Journal of Semiconductors, 2010, 31(10): 104011. doi: 10.1088/1674-4926/31/10/104011 |
| 12 |
Characterization of vanadyl phthalocyanine based surface-type capacitive humidity sensors Fakhra Aziz, M. H. Sayyad, Khassan S. Karimov, M. Saleem, Zubair Ahmad, et al. Journal of Semiconductors, 2010, 31(11): 114002. doi: 10.1088/1674-4926/31/11/114002 |
| 13 |
A capacitive membrane MEMS microwave power sensor in the X-band based on GaAs MMIC technology Su Shi, Liao Xiaoping Journal of Semiconductors, 2009, 30(5): 054004. doi: 10.1088/1674-4926/30/5/054004 |
| 14 |
An ultra-low-power CMOS temperature sensor for RFID applications Xu Conghui, Gao Peijun, Che Wenyi, Tan Xi, Yan Na , et al. Journal of Semiconductors, 2009, 30(4): 045003. doi: 10.1088/1674-4926/30/4/045003 |
| 15 |
Systemon chip thermal vacuum sensor based on standard CMOS process Li Jinfeng, Tang Zhen'an, Wang Jiaqi Journal of Semiconductors, 2009, 30(3): 035004. doi: 10.1088/1674-4926/30/3/035004 |
| 16 |
Working mechanism of a SiC nanotube NO2 gas sensor Ding Ruixue, Yang Yintang, Liu Lianxi Journal of Semiconductors, 2009, 30(11): 114010. doi: 10.1088/1674-4926/30/11/114010 |
| 17 |
A linear stepping PGA used in CMOS image sensors Xu Jiangtao, Li Binqiao, Zhao Shibin, Li Hongle, Yao Suying, et al. Journal of Semiconductors, 2009, 30(2): 025003. doi: 10.1088/1674-4926/30/2/025003 |
| 18 |
pH Sensor Realized with Standard CMOS Process Shi Zhaoxia, Zhu Dazhong Chinese Journal of Semiconductors , 2007, 28(8): 1272-1277. |
| 19 |
Design,Analysis,and Optimization of a CMOS Active Pixel Sensor Xu Jiangtao, Yao Suying, Li Binqiao, Shi Zaifeng, Gao Jing, et al. Chinese Journal of Semiconductors , 2006, 27(9): 1548-1551. |
| 20 |
Design of a Silicon Beam Resonator for a Novel Gas Sensor Hao Yilong, Xu Jiajia, Zhang Guobing, Wu Guoying, Yan Guizhen, et al. Chinese Journal of Semiconductors , 2006, 27(4): 658-661. |
Article views: 3956 Times PDF downloads: 3050 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 14 June 2009 Online: Published: 01 November 2009
| Citation: |
Shi Zhaoxia, Zhu Dazhong. Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor[J]. Journal of Semiconductors, 2009, 30(11): 114011. doi: 10.1088/1674-4926/30/11/114011
****
Shi Z X, Zhu D Z. Modeling and discussion of threshold voltage for a multi-floating gate FET pH sensor[J]. J. Semicond., 2009, 30(11): 114011. doi: 10.1088/1674-4926/30/11/114011.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: