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J. Semicond. > 2009, Volume 30 > Issue 12 > 122001

SEMICONDUCTOR PHYSICS

Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

Chi Yaqing, Zhong Haiqin, Zhang Xueao, Fang Liang and Chang Shengli

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DOI: 10.1088/1674-4926/30/12/122001

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Abstract: Periodic disposed quantum dot arrays are very useful for the large scale integration of single electron devices. Gold quantum dot arrays were self-assembled inside pore channels of ordered amino-functionalized mesoporous silica thin films, employing the neutralization reaction between chloroauric acid and amino groups. The diameters of quantum dots are controlled via changing the aperture of pore channels from 2.3 to 8.3 nm, which are characterized by HRTEM, SEM and FT-IR. UV-vis absorption spectra of gold nanoparticle/mesoporous silica composite thin films exhibit a blue shift and intensity drop of the absorption peak as the aperture of mesopores decreases, which represents the energy level change of quantum dot arrays due to the quantum size effect.

Key words: gold quantum dot array

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    Wen Shi, Sen Huang, Xinhua Wang, Qimeng Jiang, Yixu Yao, Lan Bi, Yuchen Li, Kexin Deng, Jie Fan, Haibo Yin, Ke Wei, Yankui Li, Jingyuan Shi, Haojie Jiang, Junfeng Li, Xinyu Liu. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J]. Journal of Semiconductors, 2021, 42(9): 092801. doi: 10.1088/1674-4926/42/9/092801
    W Shi, S Huang, X H Wang, Q M Jiang, Y X Yao, L Bi, Y C Li, K X Deng, J Fan, H B Yin, K Wei, Y K Li, J Y Shi, H J Jiang, J F Li, X Y Liu, Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J]. J. Semicond., 2021, 42(9): 092801. doi: 10.1088/1674-4926/42/9/092801.
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    Received: 18 August 2015 Revised: 25 May 2009 Online: Published: 01 December 2009

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      Wen Shi, Sen Huang, Xinhua Wang, Qimeng Jiang, Yixu Yao, Lan Bi, Yuchen Li, Kexin Deng, Jie Fan, Haibo Yin, Ke Wei, Yankui Li, Jingyuan Shi, Haojie Jiang, Junfeng Li, Xinyu Liu. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J]. Journal of Semiconductors, 2021, 42(9): 092801. doi: 10.1088/1674-4926/42/9/092801 ****W Shi, S Huang, X H Wang, Q M Jiang, Y X Yao, L Bi, Y C Li, K X Deng, J Fan, H B Yin, K Wei, Y K Li, J Y Shi, H J Jiang, J F Li, X Y Liu, Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J]. J. Semicond., 2021, 42(9): 092801. doi: 10.1088/1674-4926/42/9/092801.
      Citation:
      Chi Yaqing, Zhong Haiqin, Zhang Xueao, Fang Liang, Chang Shengli. Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film[J]. Journal of Semiconductors, 2009, 30(12): 122001. doi: 10.1088/1674-4926/30/12/122001 ****
      Chi Y Q, Zhong H Q, Zhang X A, Fang L, Chang S L. Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film[J]. J. Semicond., 2009, 30(12): 122001. doi: 10.1088/1674-4926/30/12/122001.

      Confinement of gold quantum dot arrays inside ordered mesoporous silica thin film

      DOI: 10.1088/1674-4926/30/12/122001
      • Received Date: 2015-08-18
      • Accepted Date: 2009-03-25
      • Revised Date: 2009-05-25
      • Published Date: 2009-12-04

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