J. Semicond. > 2009, Volume 30 > Issue 3 > 033001
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SEMICONDUCTOR MATERIALS

Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, Si Jianxiao, Yuan Zijian, Du Xiaoyang and Dong Shurong

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DOI: 10.1088/1674-4926/30/3/033001

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Abstract: Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

Key words: ZnO,  N-doping,  resistivity,  photoluminescence,  thin film transistors

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    Received: 18 August 2015 Revised: 29 September 2008 Online: Published: 01 March 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(3): 033001
      Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, Si Jianxiao, Yuan Zijian, Du Xiaoyang, Dong Shurong. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. Journal of Semiconductors, 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001 ****Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. J. Semicond., 2009, 30(3): 033001. doi:  10.1088/1674-4926/30/3/033001.
      Citation:
      Zhu Xiaming, Wu Huizhen, Wang Shuangjiang, Zhang Yingying, Cai Chunfeng, Si Jianxiao, Yuan Zijian, Du Xiaoyang, Dong Shurong. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. Journal of Semiconductors, 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001 ****
      Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. J. Semicond., 2009, 30(3): 033001. doi:  10.1088/1674-4926/30/3/033001.
      shu

      Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

      DOI: 10.1088/1674-4926/30/3/033001

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • State Key Laboratory of Modern Optical Instrumentations, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • Department of Physics, Zhejiang University, Hangzhou 310027, China

      • ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hang Zhou 310027, China

      • ESD Laboratory, Institute of Microelectronics and Photoelectronics, Zhejiang University, Hang Zhou 310027, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-06-27
      • Revised Date: 2008-09-29
      • Published Date: 2009-03-12

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