Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer

Jia Renxu; Zhang Yimen; Zhang Yuming; Wang Yuehu; Zhang Lin

doi:10.1088/1674-4926/30/3/033003

J. Semicond. > 2009, Volume 30 > Issue 3 > 033003

SEMICONDUCTOR MATERIALS

Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer

Jia Renxu, Zhang Yimen, Zhang Yuming, Wang Yuehu and Zhang Lin

+ Author Affiliations

DOI: 10.1088/1674-4926/30/3/033003

Abstract: Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon (VC) are revealed by electron spin resonance (ESR) technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.

Key words: 4H-SiC Homoepitaxial layers

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Received: 18 August 2015 Revised: 14 October 2008 Online: Published: 01 March 2009

Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon (VC) are revealed by electron spin resonance (ESR) technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.

Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer

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