J. Semicond. > 2009, Volume 30 > Issue 3 > 035001
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SEMICONDUCTOR INTEGRATED CIRCUITS

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

Du Rui, Dai Yang, Chen Yanling and Yang Fuhua

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DOI: 10.1088/1674-4926/30/3/035001

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Abstract: A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

Key words: VCO

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    Received: 18 August 2015 Revised: 23 October 2008 Online: Published: 01 March 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(3): 035001
      Du Rui, Dai Yang, Chen Yanling, Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Journal of Semiconductors, 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001 ****Du R, Dai Y, Chen Y L, Yang F H. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. J. Semicond., 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001.
      Citation:
      Du Rui, Dai Yang, Chen Yanling, Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Journal of Semiconductors, 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001 ****
      Du R, Dai Y, Chen Y L, Yang F H. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. J. Semicond., 2009, 30(3): 035001. doi: 10.1088/1674-4926/30/3/035001.
      shu

      A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

      DOI: 10.1088/1674-4926/30/3/035001

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-09-08
      • Revised Date: 2008-10-23
      • Published Date: 2009-03-12

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