| Citation: |
Ji Tao, Yang Licheng, Li Hairong, He Shanhu, Li Siyuan. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. Journal of Semiconductors, 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006
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Ji T, Yang L C, Li H R, He S H, Li S Y. Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH[J]. J. Semicond., 2009, 30(4): 044006. doi: 10.1088/1674-4926/30/4/044006.
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Photo-sensitive characteristics of negative resistance turn-around occurring in SIPTH
doi: 10.1088/1674-4926/30/4/044006
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Abstract
Influences of light irradiation on the negative resistance turn-around characteristics of static induction photosensitive thyristor (SIPTH) have been experimentally and theoretically studied. As the gate current of SIPTH is increased by the light irradiation, the potential barrier in the channel is reduced due to the increase in voltage drop across the gate series resistance. Therefore, SIPTH can be quickly switched from the blocking state to the conducting state by relatively low anode voltage. The optimal matching relation for controlling anode conducting voltage of SIPTH by light irradiation has also been represented. -
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