J. Semicond. > 2009, Volume 30 > Issue 6 > 063003, doi: 10.1088/1674-4926/30/6/063003
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SEMICONDUCTOR MATERIALS

Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip

Liu Yanbo, Zhang Ting, Niu Xiaoming, Song Zhitang, Min Guoquan, Zhang Jing, Zhou Weimin, Wan Yongzhong, Zhang Jianping, Li Xiaoli and Feng Songlin

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Abstract: The Si2Sb2Te5 phase change material has been studied by applying a nano-tip (30 nm in diameter) on an atomic force microscopy system. Memory switching from a high resistance state to a low resistance state has been achieved, with a resistance change of about 1000 times. In a typical I–V curve, the current increases significantly after the voltage exceeds ~4.3 V. The phase transformation of a Si2Sb2Te5 film was studied in situ by means of in situ X-ray diffraction and temperature dependent resistance measurements. The thermal stability of Si2Sb2Te5 and Ge2Sb2Te5 was characterized and compared as well.

Key words: phase change,  electrical probe storage,  Si2Sb2Te5

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    Received: 18 August 2015 Revised: 11 February 2009 Online: Published: 01 June 2009

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      Article Navigation >  Journal of Semiconductors  > 2009  >  30(6): 063003
      Liu Yanbo, Zhang Ting, Niu Xiaoming, Song Zhitang, Min Guoquan, Zhang Jing, Zhou Weimin, Wan Yongzhong, Zhang Jianping, Li Xiaoli, Feng Songlin. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. Journal of Semiconductors, 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003 ****Liu Y B, Zhang T, Niu X M, Song Z T, Min G Q, Zhang J, Zhou W M, Wan Y Z, Zhang J P, Li X L, Feng S L. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. J. Semicond., 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003.
      Citation:
      Liu Yanbo, Zhang Ting, Niu Xiaoming, Song Zhitang, Min Guoquan, Zhang Jing, Zhou Weimin, Wan Yongzhong, Zhang Jianping, Li Xiaoli, Feng Songlin. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. Journal of Semiconductors, 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003 ****
      Liu Y B, Zhang T, Niu X M, Song Z T, Min G Q, Zhang J, Zhou W M, Wan Y Z, Zhang J P, Li X L, Feng S L. Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip[J]. J. Semicond., 2009, 30(6): 063003. doi: 10.1088/1674-4926/30/6/063003.
      shu

      Si2Sb2Te5 phase change material studied by an atomic force microscope nano-tip

      doi: 10.1088/1674-4926/30/6/063003

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chine

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • Laboratory of Nano-Technology, Shanghai Nanotechnology Promotion Center, Shanghai 200237, China

      • State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-01-14
      • Revised Date: 2009-02-11
      • Published Date: 2009-07-13

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