| Citation: |
Li Yingying, Cheng Chuanwei, Dong Xiang, Gao Junshan, Zhang Haiqian. Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes[J]. Journal of Semiconductors, 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004
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Li Y Y, Cheng C W, Dong X, Gao J S, Zhang H Q. Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes[J]. J. Semicond., 2009, 30(6): 063004. doi: 10.1088/1674-4926/30/6/063004.
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Facile fabrication of UV photodetectors based on ZnO nanorod networks across trenched electrodes
doi: 10.1088/1674-4926/30/6/063004
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Abstract
Using a low temperature hydrothermal synthesis method, ZnO nanorod networks have been directly grown across trenched Au microelectrodes arrays, which were modified with a layer of ZnO seeds. The characteristics of the current–voltage (I–V) and the photo response were obtained both in the dark and under ultraviolet illumination. The bridged nanorod network demonstrated a highly sensitive response to UV illumination in atmosphere at room temperature. It can be useful for nanoscale optoelectronic applications, serving as chemical sensors, biological sensors, and switching devices.-
Keywords:
- semiconductors,
- nanorods,
- photodetector,
- sensors
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References
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Proportional views
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