| Citation: |
Gao Tongqiang, Zhang Chun, Chi Baoyong, Wang Zhihua. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. Journal of Semiconductors, 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008
****
Gao T Q, Zhang C, Chi B Y, Wang Z H. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. J. Semicond., 2009, 30(6): 065008. doi: 10.1088/1674-4926/30/6/065008.
|
Design and analysis of a highly-integrated CMOS power amplifier for RFID readers
doi: 10.1088/1674-4926/30/6/065008
-
Abstract
To implement a fully-integrated on-chip CMOS power amplifier (PA) for RFID readers, the resonant frequency of each matching network is derived in detail. The highlight of the design is the adoption of a bonding wire as the output-stage inductor. Compared with the on-chip inductors in a CMOS process, the merit of the bondwire inductor is its high quality factor, leading to a higher output power and efficiency. The disadvantage of the bondwire inductor is that it is hard to control. A highly integrated class-E PA is implemented with 0.18-μm CMOS process. It can provide a maximum output power of 20 dBm and a 1 dB output power of 14.5 dBm. The maximum power-added efficiency (PAE) is 32.1%. Also, the spectral performance of the PA is analyzed for the specified RFID protocol.-
Keywords:
- CMOS power amplifier,
- RFID reader,
- matching network
-
References
-
Proportional views
DownLoad: