| Citation: |
Shu Zhen, Wan Jing, Lu Bingrui, Xie Shenqi, Chen Yifang, Qu Xinping, Liu Ran. Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates[J]. Journal of Semiconductors, 2009, 30(6): 066001. doi: 10.1088/1674-4926/30/6/066001
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Shu Z, Wan J, Lu B R, Xie S Q, Chen Y F, Qu X P, Liu R. Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates[J]. J. Semicond., 2009, 30(6): 066001. doi: 10.1088/1674-4926/30/6/066001.
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Fast patterning and dry-etch of SiNx for high resolution nanoimprint templates
doi: 10.1088/1674-4926/30/6/066001
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Abstract
We developed a simplified nanofabrication process for imprint templates by fast speed electron beam lithography (EBL) and a dry etch technique on a SiNx substrate, intended for large area manufacturing. To this end, the highly sensitive chemically amplified resist (CAR), NEB-22, with negative tone was used. The EBL process first defines the template pattern in NEB-22, which is then directly used as an etching mask in the subsequent reactive ion etching (RIE) on the SiNx to form the desired templates. The properties of both e-beam lithography and dry etch of NEB-22 were carefully studied, indicating significant advantages of this process with some drawbacks compared to when Cr was used as an etching mask. Nevertheless, our results open up a good opportunity to fabricate high resolution imprint templates with the prospect of wafer scale manufacturing. -
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