Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

Duan Huantao; Gu Wenping; Zhang Jincheng; Hao Yue; Chen Chi; Ni Jinyu; Xu Shengrui

doi:10.1088/1674-4926/30/7/073001

Article Navigation > Journal of Semiconductors > 2009 > 30(7): 073001

Duan Huantao, Gu Wenping, Zhang Jincheng, Hao Yue, Chen Chi, Ni Jinyu, Xu Shengrui. Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD[J]. Journal of Semiconductors, 2009, 30(7): 073001. doi: 10.1088/1674-4926/30/7/073001 ****Duan H T, Gu W P, Zhang J C, Hao Y, Chen C, Ni J Y, Xu S R. Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD[J]. J. Semicond., 2009, 30(7): 073001. doi: 10.1088/1674-4926/30/7/073001.

Citation:

Duan H T, Gu W P, Zhang J C, Hao Y, Chen C, Ni J Y, Xu S R. Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD[J]. J. Semicond., 2009, 30(7): 073001. doi: 10.1088/1674-4926/30/7/073001.

Citation:

PDF( 308 KB)

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

DOI: 10.1088/1674-4926/30/7/073001

Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Received Date: 2015-08-18
Accepted Date: 2008-12-30
Revised Date: 2009-02-24
Published Date: 2009-07-10

Abstract

Abstract

The crystal quality, stress and strain of GaN grown on 4H-SiC and sapphire are characterized by high resolution X-ray diffraction (HRXRD) and Raman spectroscopy. The large stress in GaN leads to the generation of a large number of dislocations. The Raman stress is determined by the results of HRXRD. The position and line shape of the A1 longitudinal optical (LO) phonon mode is used to determine the free carrier concentration and electron mobility in GaN. The differences between free carrier concentration and electron mobility in GaN grown on sapphire and 4H-SiC are analyzed.
- metalorganic vapor phase epitaxy

FullText(HTML)

References(0)

References

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

DOI: 10.1088/1674-4926/30/7/073001

Abstract

References

Proportional views

Catalog

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

Search

GET CITATION

Share:

Article Metrics

History

Catalog

Email This Article

Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD

DOI: 10.1088/1674-4926/30/7/073001

Abstract

References

Proportional views

Catalog

Export File

Citation

Format

Content