Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell

Zhang Lucheng; Shen Hui

doi:10.1088/1674-4926/30/7/074007

J. Semicond. > 2009, Volume 30 > Issue 7 > 074007

SEMICONDUCTOR DEVICES

Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell

Zhang Lucheng and Shen Hui

+ Author Affiliations

DOI: 10.1088/1674-4926/30/7/074007

Abstract: Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell. In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated. The result showed that the region under the emitter was more badly shunted than the other emitter regions. The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience. The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

Key words: solar cell

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Zhang Lucheng, Shen Hui. Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell[J]. Journal of Semiconductors, 2009, 30(7): 074007. doi: 10.1088/1674-4926/30/7/074007

Zhang L C, Shen H. Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell[J]. J. Semicond., 2009, 30(7): 074007. doi: 10.1088/1674-4926/30/7/074007.

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Received: 18 August 2015 Revised: 08 May 2009 Online: Published: 01 July 2009

Shunt can drastically decrease the solar cell conversion efficiency and its current measurement result only reflects the overall shunting effect of all shunts in a whole cell. In order to accurately characterize local shunts caused by the penetration of front contacts through the emitter junction, silicon solar cells with a new structure named beam bridge contact were fabricated. The result showed that the region under the emitter was more badly shunted than the other emitter regions. The sample preparation process was completely compatible with the industrial silicon fabrication sequence, which was of great convenience. The measurement results give informations on the solar cell structure, material ingredients, and process parameters.

Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell

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Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell

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Novel approach for characterizing the specific shunt resistance caused by the penetration of the front contact through the p–n junction in solar cell

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