Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

Yu Bo; Wang Yuan; Jia Song; Zhang Ganggang

doi:10.1088/1674-4926/30/7/075001

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Yu Bo, Wang Yuan, Jia Song, Zhang Ganggang. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. Journal of Semiconductors, 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001 ****Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.

Citation:

Yu Bo, Wang Yuan, Jia Song, Zhang Ganggang. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. Journal of Semiconductors, 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001 ****

Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.

Citation:

Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.

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Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

DOI: 10.1088/1674-4926/30/7/075001

Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China
Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China

Received Date: 2015-08-18
Accepted Date: 2009-01-13
Revised Date: 2009-03-06
Published Date: 2009-07-10

Abstract

Abstract

This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS process. This mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gate-oxide reliability that the conventional CMOS I/O buffer has. The design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ~34% with respect to the product of power consumption and speed.
- mixed-voltage I/O buffer,
- multi-power domain,
- thin-oxide,
- CMOS

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Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

DOI: 10.1088/1674-4926/30/7/075001

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Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

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