| Citation: |
Ye Zhizhen, Zhang Liqiang, Huang Jingyun, Zhang Yinzhu, Zhu Liping, Lü Bin, Lü Jianguo, Wang Lei, Jin Yizheng, Jiang Jie, Xue Ya, Zhang Jun, Lin Shisheng, Yang Dan. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. Journal of Semiconductors, 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001
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Ye Z Z, Zhang L Q, Huang J Y, Zhang Y Z, Zhu L P, Lü B, Lü J, Wang L, Jin Y Z, Jiang J, Xue Y, Zhang J, Lin S S, Yang D. Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode[J]. J. Semicond., 2009, 30(8): 081001. doi: 10.1088/1674-4926/30/8/081001.
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Room-temperature electroluminescence of p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode
DOI: 10.1088/1674-4926/30/8/081001
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Abstract
p-ZnxMg1-xO:Na/n-ZnO p-n junction light emitting diode (LED) was produced on n-ZnO (0001) single-crystal substrate using pulsed laser deposition. The realization of band gap engineering was achieved by the incorporation of Mg in ZnO layers and was confirmed by photoluminescence spectrum. The p-type ZnxMg1-xO:Na film with low resistance was obtained at 500 ℃ and in which, Na has taken effect evidenced by Hall and X-ray photoelectron spectroscopy measurements. The current–voltage curve of LED showed a rectifying behavior and obvious electroluminescence was realized by feeding a direct current up to 40 mA. Furthermore, its structural and electric characters are discussed as well.-
Keywords:
- ZnO,
- electroluminescence,
- Na doped,
- LED
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References
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Proportional views
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