| Citation: |
Yao Guoqin, Chi Baoyong, Zhang Chun, Wang Zhihua. A dual-band reconfigurable direct-conversion receiver RF front-end[J]. Journal of Semiconductors, 2009, 30(9): 095008. doi: 10.1088/1674-4926/30/9/095008
****
Yao G Q, Chi B Y, Zhang C, Wang Z H. A dual-band reconfigurable direct-conversion receiver RF front-end[J]. J. Semicond., 2009, 30(9): 095008. doi: 10.1088/1674-4926/30/9/095008.
|
A dual-band reconfigurable direct-conversion receiver RF front-end
DOI: 10.1088/1674-4926/30/9/095008
-
Abstract
A dual-band reconfigurable wireless receiver RF front-end is presented, which is based on the direct-conversion principle and consists of a low noise amplifier (LNA) and a down-converter. By utilizing a compact switchable on-chip symmetrical inductor, the RF front-end could be switched between two operation frequency bands without extra die area cost. This RF front-end has been implemented in the 180 nm CMOS process and the measured results show that the front-end could provide a gain of 25 dB and IIP3 of 6 dBm at 2.2 GHz, and a gain of 18.8 dB and IIP3 of 7.3 dBm at 4.5 GHz. The whole front-end consumes 12 mA current at 1.2 V voltage supply for the LNA and 2.1 mA current at 1.8 V for the mixer, with a die area of 1.2 × 1 mm2.-
Keywords:
- RF
-
References
-
Proportional views
DownLoad: