1 |
6T SRAM cell analysis for DRV and read stability
Ruchi, S.Dasgupta
Journal of Semiconductors, 2017, 38(2): 025001. doi: 10.1088/1674-4926/38/2/025001
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2 |
Memristive SRAM cell of seven transistors and one memristor
Patrick W. C. Ho, Haider Abbas F. Almurib, T. Nandha Kumar
Journal of Semiconductors, 2016, 37(10): 104002. doi: 10.1088/1674-4926/37/10/104002
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3 |
Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTsSRAM unit and voltage level shifter using fluorine plasma treatment
Yonghe Chen, Xuefeng Zheng, Jincheng Zhang, Xiaohua Ma, Yue Hao, et al.
Journal of Semiconductors, 2016, 37(5): 055002. doi: 10.1088/1674-4926/37/5/055002
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4 |
Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening
Xinhong Hong, Liyang Pan, Wendi Zhang, Dongmei Ji, Dong Wu, et al.
Journal of Semiconductors, 2015, 36(11): 114003. doi: 10.1088/1674-4926/36/11/114003
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5 |
SRAM standby leakage decoupling analysis for different leakage reduction techniques
Qing Dong, Yinyin Lin
Journal of Semiconductors, 2013, 34(4): 045008. doi: 10.1088/1674-4926/34/4/045008
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6 |
Total dose ionizing irradiation effects on a static random access memory field programmable gate array
Gao Bo, Yu Xuefeng, Ren Diyuan, Li Yudong, Sun Jing, et al.
Journal of Semiconductors, 2012, 33(3): 034007. doi: 10.1088/1674-4926/33/3/034007
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7 |
A 200 mV low leakage current subthreshold SRAM bitcell in a 130 nm CMOS process
Bai Na, Lü Baitao
Journal of Semiconductors, 2012, 33(6): 065008. doi: 10.1088/1674-4926/33/6/065008
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8 |
Worst-case total dose radiation effect in deep-submicron SRAM circuits
Ding Lili, Yao Zhibin, Guo Hongxia, Chen Wei, Fan Ruyu, et al.
Journal of Semiconductors, 2012, 33(7): 075010. doi: 10.1088/1674-4926/33/7/075010
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9 |
An IO block array in a radiation-hardened SOI SRAM-based FPGA
Zhao Yan, Wu Lihua, Han Xiaowei, Li Yan, Zhang Qianli, et al.
Journal of Semiconductors, 2012, 33(1): 015010. doi: 10.1088/1674-4926/33/1/015010
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10 |
Gate leakage current reduction in IP3 SRAM cells at 45 nm CMOS technology for multimedia applications
R. K. Singh, Neeraj Kr. Shukla, Manisha Pattanaik
Journal of Semiconductors, 2012, 33(5): 055001. doi: 10.1088/1674-4926/33/5/055001
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11 |
Analysis and optimization of current sensing circuit for deep sub-micron SRAM
Wang Yiqi, Zhao Fazhan, Liu Mengxin, Lü Yinxue, Zhao Bohua, et al.
Journal of Semiconductors, 2011, 32(11): 115016. doi: 10.1088/1674-4926/32/11/115016
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12 |
Novel SEU hardened PD SOI SRAM cell
Xie Chengmin, Wang Zhongfang, Wang Xihu, Wu Longsheng, Liu Youbao, et al.
Journal of Semiconductors, 2011, 32(11): 115017. doi: 10.1088/1674-4926/32/11/115017
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13 |
A novel high reliability CMOS SRAM cell
Xie Chengmin, Wang Zhongfang, Wu Longsheng, Liu Youbao
Journal of Semiconductors, 2011, 32(7): 075011. doi: 10.1088/1674-4926/32/7/075011
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14 |
An ultra-low-power 1 kb sub-threshold SRAM in the 180 nm CMOS process
Liu Ming, Chen Hong, Li Changmeng, Wang Zhihua
Journal of Semiconductors, 2010, 31(6): 065013. doi: 10.1088/1674-4926/31/6/065013
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15 |
Optimization and Application of SRAM in 90nm CMOS Technology
Zhou Qingjun, Liu Hongxia
Journal of Semiconductors, 2008, 29(5): 883-888.
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16 |
Design of a High-Speed Low-Power 9-Port Register File
Cong Gaojian, Qi Jiayue
Chinese Journal of Semiconductors , 2007, 28(4): 614-618.
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17 |
Reducing Leakage of SRAM Using Dual-Gate-Oxide-Thickness Transistors in 45nm Bulk Technology
Yang Song, Wang Hong, Yang Zhijia
Chinese Journal of Semiconductors , 2007, 28(5): 745-749.
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18 |
Circuit Simulation of SEU for SRAM Cells
Liu Zheng, Sun Yongjie, Li Shaoqing, Liang Bin
Chinese Journal of Semiconductors , 2007, 28(1): 138-141.
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19 |
A Low Power SRAM/SOI Memory Cell Design
Yu Yang, Zhao Qian, Shao Zhibiao
Chinese Journal of Semiconductors , 2006, 27(2): 318-322.
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20 |
一种用于SRAM快速仿真的模型
Chinese Journal of Semiconductors , 2005, 26(6): 1264-1268.
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