Optical bistability in a two-section InAs quantum-dot laser

Jiang Liwen; Ye Xiaoling; Zhou Xiaolong; Jin Peng; Lü Xueqin; Wang Zhanguo

doi:10.1088/1674-4926/31/11/114012

J. Semicond. > 2010, Volume 31 > Issue 11 > 114012

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Optical bistability in a two-section InAs quantum-dot laser

Jiang Liwen, Ye Xiaoling, Zhou Xiaolong, Jin Peng, Lü Xueqin and Wang Zhanguo

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DOI: 10.1088/1674-4926/31/11/114012

Abstract: Room temperature, continuous-wave bistable operation is achieved in two-section 1.24 μm InAs quantum-dot (QD) lasers with integrated intracavity QD saturable absorbers (SA). It is found that the hysteresis width is narrowed with increasing reverse bias voltage, and broadened with increasing length of saturable absorber. This can be explained by the competition between QD absorption and electroabsorption in the SA section. In addition, a larger hysteresis width is realized than other reports so far, which can be attributed to a greater number of stacked layers of active region in our case. The experimental results can be explained by a modified threshold current model.

Key words: Absorption saturation, optical bistability, quantum-dot lasers, saturable absorber

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Jiang Liwen, Ye Xiaoling, Zhou Xiaolong, Jin Peng, Lü Xueqin, Wang Zhanguo. Optical bistability in a two-section InAs quantum-dot laser[J]. Journal of Semiconductors, 2010, 31(11): 114012. doi: 10.1088/1674-4926/31/11/114012

Jiang L W, Ye X L, Zhou X L, Jin P, Lü X, Wang Z G. Optical bistability in a two-section InAs quantum-dot laser[J]. J. Semicond., 2010, 31(11): 114012. doi: 10.1088/1674-4926/31/11/114012.

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Received: 18 August 2015 Revised: 30 April 2010 Online: Published: 01 November 2010

Room temperature, continuous-wave bistable operation is achieved in two-section 1.24 μm InAs quantum-dot (QD) lasers with integrated intracavity QD saturable absorbers (SA). It is found that the hysteresis width is narrowed with increasing reverse bias voltage, and broadened with increasing length of saturable absorber. This can be explained by the competition between QD absorption and electroabsorption in the SA section. In addition, a larger hysteresis width is realized than other reports so far, which can be attributed to a greater number of stacked layers of active region in our case. The experimental results can be explained by a modified threshold current model.

Optical bistability in a two-section InAs quantum-dot laser

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