| Citation: |
Zhou Feng, Gao Ting, Lan Fei, Li Wei, Li Ning, Ren Junyan. A low noise CMOS RF front-end for UWB 6–9 GHz applications[J]. Journal of Semiconductors, 2010, 31(11): 115009. doi: 10.1088/1674-4926/31/11/115009
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Zhou F, Gao T, Lan F, Li W, Li N, Ren J Y. A low noise CMOS RF front-end for UWB 6–9 GHz applications[J]. J. Semicond., 2010, 31(11): 115009. doi: 10.1088/1674-4926/31/11/115009.
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Abstract
An integrated fully differential ultra-wideband CMOS RF front-end for 6–9 GHz is presented. A resistive feedback low noise amplifier and a gain controllable IQ merged folded quadrature mixer are integrated as the RF front-end. The ESD protected chip is fabricated in a TSMC 0.13 μm RF CMOS process and achieves a maximum voltage gain of 23–26 dB and a minimum voltage gain of 16–19 dB, an averaged total noise figure of 3.3–4.6 dB while operating in the high gain mode and an in-band IIP3 of –12.6 dBm while in the low gain mode. This RF front-end consumes 17 mA from a 1.2 V supply voltage. -
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