| Citation: |
Li Yongliang, Xu Qiuxia. Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask[J]. Journal of Semiconductors, 2010, 31(11): 116001. doi: 10.1088/1674-4926/31/11/116001
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Li Y L, Xu Q X. Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask[J]. J. Semicond., 2010, 31(11): 116001. doi: 10.1088/1674-4926/31/11/116001.
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Selective wet etch of a TaN metal gate with an amorphous-silicon hard mask
DOI: 10.1088/1674-4926/31/11/116001
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Abstract
The appropriate wet etch process for the selective removal of TaN on the HfSiON dielectric with an amorphous-silicon (a-Si) hardmask is presented. SC1 (NH4OH : H2O2 : H2O), which can achieve reasonable etch rates for metal gates and very high selectivity to high-k dielectrics and hardmask materials, is chosen as the TaN etchant. Compared with the photoresist mask and the tetraethyl orthosilicate (TEOS) hardmask, the a-Si hardmask is a better choice to achieve selective removal of TaN on the HfSiON dielectric because it is impervious to the SC1 etchant and can be readily etched with NH4OH solution without attacking the TaN and the HfSiON film. In addition, the surface of the HfSiON dielectric is smooth after the wet etching of the TaN metal gate and a-Si hardmask removal, which could prevent device performance degradation. Therefore, the wet etching of TaN with the a-Si hardmask can be applied to dual metal gate integration for the selective removal of the first TaN metal gate deposition.-
Keywords:
- TaN,
- Wet etching,
- Metal gate,
- High k dielectric,
- hardmask,
- Integration
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References
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Proportional views
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