J. Semicond. > 2010, Volume 31 > Issue 2 > 024005
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SEMICONDUCTOR DEVICES

A micron-sized GMR sensor with a CoCrPt hard bias

Zheng Yang, Qu Bingjun, Liu Xi, Wei Dan, Wei Fulin, Ren Tianling and Liu Litian

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DOI: 10.1088/1674-4926/31/2/024005

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Abstract: A GMR (giant magneto-resistive) spin valve sensor for magnetic recording has been designed in an attempt to solve the Barkhausen noise problem in small-sized GMR sensors. In this study, the GMR ratio of the top-pinned spin valve is optimized to a value of 13.2%. The free layer is magnetized perpendicular to the pinned layer by a CoCrPt permanent magnetic bias so that a linear magnetic field response can be obtained. An obvious improvement on performance is observed when the permanent magnetic bias is magnetized, while the GMR sensor has a steadier MR–H loop and a smaller coercive field.

Key words: GMR,  spin-valve,  magnetic stabilization,  Barkhausen noise

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    Received: 18 August 2015 Revised: 15 September 2009 Online: Published: 01 February 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(2): 024005
      Zheng Yang, Qu Bingjun, Liu Xi, Wei Dan, Wei Fulin, Ren Tianling, Liu Litian. A micron-sized GMR sensor with a CoCrPt hard bias[J]. Journal of Semiconductors, 2010, 31(2): 024005. doi: 10.1088/1674-4926/31/2/024005 ****Zheng Y, Qu B J, Liu X, Wei D, Wei F L, Ren T L, Liu L T. A micron-sized GMR sensor with a CoCrPt hard bias[J]. J. Semicond., 2010, 31(2): 024005. doi: 10.1088/1674-4926/31/2/024005.
      Citation:
      Zheng Yang, Qu Bingjun, Liu Xi, Wei Dan, Wei Fulin, Ren Tianling, Liu Litian. A micron-sized GMR sensor with a CoCrPt hard bias[J]. Journal of Semiconductors, 2010, 31(2): 024005. doi: 10.1088/1674-4926/31/2/024005 ****
      Zheng Y, Qu B J, Liu X, Wei D, Wei F L, Ren T L, Liu L T. A micron-sized GMR sensor with a CoCrPt hard bias[J]. J. Semicond., 2010, 31(2): 024005. doi: 10.1088/1674-4926/31/2/024005.
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      A micron-sized GMR sensor with a CoCrPt hard bias

      DOI: 10.1088/1674-4926/31/2/024005

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Key Laboratory of Magnetism and Magnetic Materials, Research Institute of Magnetic Materials, Lanzhou University, Gansu 730000, China

      • Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

      • Key Laboratory of Magnetism and Magnetic Materials, Research Institute of Magnetic Materials, Lanzhou University, Gansu 730000, China

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-07-03
      • Revised Date: 2009-09-15
      • Published Date: 2010-01-27

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