J. Semicond. > 2010, Volume 31 > Issue 3 > 032003

SEMICONDUCTOR PHYSICS

Grain boundary layer behavior in ZnO/Si heterostructure

Liu Bingce, Liu Cihui and Yi Bo

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DOI: 10.1088/1674-4926/31/3/032003

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Abstract: The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current–voltage (I –V ) curves, deep level transient spectra (DLTS) and capacitance–voltage (C–V ) curves are measured. The transport currents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interfacial states existed. The interesting phenomenon that the crossing of lnI – V curves of ZnO/Si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following.

Key words: ZnO/Si heterostructure

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    Received: 18 August 2015 Revised: 15 October 2009 Online: Published: 01 March 2010

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      Liu Bingce, Liu Cihui, Yi Bo. Grain boundary layer behavior in ZnO/Si heterostructure[J]. Journal of Semiconductors, 2010, 31(3): 032003. doi: 10.1088/1674-4926/31/3/032003 ****Liu B C, Liu C H, Yi B. Grain boundary layer behavior in ZnO/Si heterostructure[J]. J. Semicond., 2010, 31(3): 032003. doi: 10.1088/1674-4926/31/3/032003.
      Citation:
      Liu Bingce, Liu Cihui, Yi Bo. Grain boundary layer behavior in ZnO/Si heterostructure[J]. Journal of Semiconductors, 2010, 31(3): 032003. doi: 10.1088/1674-4926/31/3/032003 ****
      Liu B C, Liu C H, Yi B. Grain boundary layer behavior in ZnO/Si heterostructure[J]. J. Semicond., 2010, 31(3): 032003. doi: 10.1088/1674-4926/31/3/032003.

      Grain boundary layer behavior in ZnO/Si heterostructure

      DOI: 10.1088/1674-4926/31/3/032003
      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-16
      • Revised Date: 2009-10-15
      • Published Date: 2010-02-08

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