Citation: |
Huang Zhengliang, Yu Faxin, Zheng Yao. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. Journal of Semiconductors, 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001
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Huang Z L, Yu F X, Zheng Y. A 4 W K-band GaAs MMIC power amplifier with 22 dB gain[J]. J. Semicond., 2010, 31(3): 035001. doi: 10.1088/1674-4926/31/3/035001.
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A 4 W K-band GaAs MMIC power amplifier with 22 dB gain
doi: 10.1088/1674-4926/31/3/035001
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Abstract
A 4 W K-band AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA) is reported. This amplifier is designed to fully match for a 50 Ω input and output impedance based on the 0.15 μm power PHEMT process. Under the condition of 5.6 V and 2.6 A DC bias, the amplifier has achieved a 22 dB small-signal gain, better than a 13 dB input return loss, and 36 dBm saturation power with 25% PAE from 19 to 22 GHz.-
Keywords:
- K-band,
- power amplifier,
- MMIC,
- PHEMT
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References
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Proportional views