Citation: |
Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji. A new SOI high voltage device based on E-SIMOX substrate[J]. Journal of Semiconductors, 2010, 31(4): 044008. doi: 10.1088/1674-4926/31/4/044008
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Wu L J, Hu S D, Zhang B, Li Z J. A new SOI high voltage device based on E-SIMOX substrate[J]. J. Semicond., 2010, 31(4): 044008. doi: 10.1088/1674-4926/31/4/044008.
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Abstract
A new NI (nC charge islands) high voltage device structure based on E-SIMOX (epitaxy-the separation by implantation of oxygen) substrate is proposed. It is characterized by equidistant high concentration nC-regions on the top interface of the dielectric buried layer. Inversion holes caused by the vertical electric field (EV/ are located in the spacing of two neighboring nC-regions on the interface by the force from lateral electric field (EL/ and the compositive operation of Coulomb’s forces with the ionized donors in the undepleted nC-regions. This effectively enhances the electric field of dielectric buried layer (EI/ and increases breakdown voltage (VB/. An analytical model of the vertical interface electric field for the NI SOI is presented, and the analytical results are in good agreement with the 2D simulative results. EI = 568 V/μm and VB = 230 V of NI SOI are obtained by 2D simulation on a 0.375-μm-thick dielectric layer and 2-μm-thick top silicon layer. The device can be manufactured by using the standard CMOS process with addition of a mask for implanting arsenic to form NI. 2-μm silicon layer can be achieved by using epitaxy SIMOX technology (E-SIMOX).-
Keywords:
- E-SIMOX,
- charge islands,
- breakdown voltage,
- interface charges,
- ENDIF
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References
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