SEMICONDUCTOR DEVICES
Abstract: A new NI (nC charge islands) high voltage device structure based on E-SIMOX (epitaxy-the separation by implantation of oxygen) substrate is proposed. It is characterized by equidistant high concentration nC-regions on the top interface of the dielectric buried layer. Inversion holes caused by the vertical electric field (EV/ are located in the spacing of two neighboring nC-regions on the interface by the force from lateral electric field (EL/ and the compositive operation of Coulomb’s forces with the ionized donors in the undepleted nC-regions. This effectively enhances the electric field of dielectric buried layer (EI/ and increases breakdown voltage (VB/. An analytical model of the vertical interface electric field for the NI SOI is presented, and the analytical results are in good agreement with the 2D simulative results. EI = 568 V/μm and VB = 230 V of NI SOI are obtained by 2D simulation on a 0.375-μm-thick dielectric layer and 2-μm-thick top silicon layer. The device can be manufactured by using the standard CMOS process with addition of a mask for implanting arsenic to form NI. 2-μm silicon layer can be achieved by using epitaxy SIMOX technology (E-SIMOX).
Key words: E-SIMOX, charge islands, breakdown voltage, interface charges, ENDIF
| 1 |
Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, et al. Journal of Semiconductors, 2019, 40(1): 012803. doi: 10.1088/1674-4926/40/1/012803 |
| 2 |
A monolithic integrated low-voltage deep brain stimulator with wireless power and data transmission Zhang Zhang, Ye Tan, Jianmin Zeng, Xu Han, Xin Cheng, et al. Journal of Semiconductors, 2016, 37(9): 095003. doi: 10.1088/1674-4926/37/9/095003 |
| 3 |
Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor Yang Liu, Changchun Chai, Chunlei Shi, Qingyang Fan, Yuqian Liu, et al. Journal of Semiconductors, 2016, 37(12): 124002. doi: 10.1088/1674-4926/37/12/124002 |
| 4 |
Futong Chu, Chao Chen, Xingzhao Liu Journal of Semiconductors, 2014, 35(3): 034007. doi: 10.1088/1674-4926/35/3/034007 |
| 5 |
Xiaorong Luo, Xiaowei Wang, Gangyi Hu, Yuanhang Fan, Kun Zhou, et al. Journal of Semiconductors, 2014, 35(2): 024007. doi: 10.1088/1674-4926/35/2/024007 |
| 6 |
Devashish Pandey, T.R. Lenka Journal of Semiconductors, 2014, 35(10): 104001. doi: 10.1088/1674-4926/35/10/104001 |
| 7 |
Simulating and modeling the breakdown voltage in a semi-insulating GaAs P+N junction diode A. Resfa, Brahimi.R. Menezla, M. Benchhima Journal of Semiconductors, 2014, 35(8): 084002. doi: 10.1088/1674-4926/35/8/084002 |
| 8 |
A voltage regulator system with dynamic bandwidth boosting for passive UHF RFID transponders Jinpeng Shen, Xin'an Wang, Shan Liu, Shoucheng Li, Zhengkun Ruan, et al. Journal of Semiconductors, 2013, 34(10): 105004. doi: 10.1088/1674-4926/34/10/105004 |
| 9 |
A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs Wang Honglai, Zhang Xiaoxing, Dai Yujie, Lü Yingjie, Toshimasa Matsuoka, et al. Journal of Semiconductors, 2011, 32(8): 085009. doi: 10.1088/1674-4926/32/8/085009 |
| 10 |
A novel high-voltage device structure with an N+ ring in substrate and the breakdown voltage model Li Qi, Zhu Jinluan, Wang Weidong, Yue Hongwei, Jin Liangnian, et al. Journal of Semiconductors, 2011, 32(12): 124005. doi: 10.1088/1674-4926/32/12/124005 |
| 11 |
Complementary charge islands structure for a high voltage device of partial-SOI Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2011, 32(1): 014003. doi: 10.1088/1674-4926/32/1/014003 |
| 12 |
A novel complementary N+-charge island SOI high voltage device Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji Journal of Semiconductors, 2010, 31(11): 114010. doi: 10.1088/1674-4926/31/11/114010 |
| 13 |
Breakdown Characteristic of Multiregion Double RESURF LDMOS with High Voltage Interconnection Qiao Ming, Zhou Xianda, Duan Mingwei, Fang Jian, Zhang Bo, et al. Chinese Journal of Semiconductors , 2007, 28(9): 1428-1432. |
| 14 |
Realizing High Breakdown Voltage SJ-LDMOS on Bulk Silicon Using a Partial n-Buried Layer Chen Wanjun, Zhang Bo, Li Zhaoji Chinese Journal of Semiconductors , 2007, 28(3): 355-360. |
| 15 |
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling Deng Ning, Pan Liyang, Liu Zhihong, Zhu Jun, Chen Peiyi, et al. Chinese Journal of Semiconductors , 2006, 27(3): 454-458. |
| 16 |
Sub-1V CMOS Voltage Reference Based on Weighted Vgs Zhang Xun, Wang Peng, Jin Dongming Chinese Journal of Semiconductors , 2006, 27(5): 774-777. |
| 17 |
Breakdown Voltage Analysis for a Double Step Buried Oxide SOI Structure Duan Baoxing, Zhang Bo, Li Zhaoji Chinese Journal of Semiconductors , 2006, 27(5): 886-891. |
| 18 |
Zhao Yi, Wan Xinggong, Xu Xiangming, Cao Gang, Bu Jiao, et al. Chinese Journal of Semiconductors , 2006, 27(2): 290-293. |
| 19 |
On-State Breakdown Model for High Voltage RESURF LDMOS Fang Jian, Yi Kun, Li Zhaoji, and Zhang Bo（436） Chinese Journal of Semiconductors , 2005, 26(3): 436-442. |
| 20 |
Lu Shengli, Sun Zhilin, Sun Weifeng, Shi Longxing Chinese Journal of Semiconductors , 2005, 26(12): 2286-2289. |
Article views: 4112 Times PDF downloads: 1401 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 09 November 2009 Online: Published: 01 April 2010
| Citation: |
Wu Lijuan, Hu Shengdong, Zhang Bo, Li Zhaoji. A new SOI high voltage device based on E-SIMOX substrate[J]. Journal of Semiconductors, 2010, 31(4): 044008. doi: 10.1088/1674-4926/31/4/044008
****
Wu L J, Hu S D, Zhang B, Li Z J. A new SOI high voltage device based on E-SIMOX substrate[J]. J. Semicond., 2010, 31(4): 044008. doi: 10.1088/1674-4926/31/4/044008.
|
WeChat ID
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2
DownLoad: