J. Semicond. > 2010, Volume 31 > Issue 4 > 044009
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SEMICONDUCTOR DEVICES

RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET

Sun Lingling, Lü Binyi, Liu Jun and Chen Lei

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DOI: 10.1088/1674-4926/31/4/044009

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Abstract: A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC’s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters (50 MHz–40 GHz), and power characteristics, which shows that our model is accurate and reliable.

Key words: RF-MOSFET

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    Received: 18 August 2015 Revised: 09 December 2009 Online: Published: 01 April 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(4): 044009
      Sun Lingling, Lü Binyi, Liu Jun, Chen Lei. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. Journal of Semiconductors, 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009 ****Sun L L, Lü B, Liu J, Chen L. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. J. Semicond., 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009.
      Citation:
      Sun Lingling, Lü Binyi, Liu Jun, Chen Lei. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. Journal of Semiconductors, 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009 ****
      Sun L L, Lü B, Liu J, Chen L. RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET[J]. J. Semicond., 2010, 31(4): 044009. doi: 10.1088/1674-4926/31/4/044009.
      shu

      RF CMOS modeling: a novel empirical large-signal model for an RF-MOSFET

      DOI: 10.1088/1674-4926/31/4/044009

      • Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

      • Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

      • Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

      • Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-09-19
      • Revised Date: 2009-12-09
      • Published Date: 2010-03-29

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