J. Semicond. > 2010, Volume 31 > Issue 4 > 045005
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SEMICONDUCTOR INTEGRATED CIRCUITS

A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple

Xi Tianzuo, Huang Lu, Zheng Zhong and Feng Lisong

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DOI: 10.1088/1674-4926/31/4/045005

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Abstract: A differential power amplifier (PA), designed using the linear-phase filter model, for a BPSK modulated ultra-wideband (UWB) system operating in the 3–5 GHz frequency range is presented. The proposed PA was fabricated using 0.18 μm SMIC CMOS technology. To achieve sufficient linearity and efficiency, this PA operates in the class-AB region, delivering an output power of 8.5 dBm at an input-1 dB compression point of –0.5 dBm. It consumes 28.8 mW, realizing a flat gain of 9.11±0.39 dB and a very low group delay ripple of ±8 ps across the whole band of operation.

Key words: PA

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    Received: 18 August 2015 Revised: 28 November 2009 Online: Published: 01 April 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(4): 045005
      Xi Tianzuo, Huang Lu, Zheng Zhong, Feng Lisong. A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple[J]. Journal of Semiconductors, 2010, 31(4): 045005. doi: 10.1088/1674-4926/31/4/045005 ****Xi T Z, Huang L, Zheng Z, Feng L S. A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple[J]. J. Semicond., 2010, 31(4): 045005. doi: 10.1088/1674-4926/31/4/045005.
      Citation:
      Xi Tianzuo, Huang Lu, Zheng Zhong, Feng Lisong. A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple[J]. Journal of Semiconductors, 2010, 31(4): 045005. doi: 10.1088/1674-4926/31/4/045005 ****
      Xi T Z, Huang L, Zheng Z, Feng L S. A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple[J]. J. Semicond., 2010, 31(4): 045005. doi: 10.1088/1674-4926/31/4/045005.
      shu

      A 3–5 GHz CMOS UWB power amplifier with ±8 ps group delay ripple

      DOI: 10.1088/1674-4926/31/4/045005

      • Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      • Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      • Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      • Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China

      • Received Date: 2015-08-18
      • Accepted Date: 2009-08-04
      • Revised Date: 2009-11-28
      • Published Date: 2010-03-29

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