Citation: |
Wang Dongfang, Yuan Tingting, Wei Ke, Chen Xiaojuan, Liu Xinyu. Gate-structure optimization for high frequency power AlGaN/GaN HEMTs[J]. Journal of Semiconductors, 2010, 31(5): 054003. doi: 10.1088/1674-4926/31/5/054003
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Wang D F, Yuan T T, Wei K, Chen X J, Liu X Y. Gate-structure optimization for high frequency power AlGaN/GaN HEMTs[J]. J. Semicond., 2010, 31(5): 054003. doi: 10.1088/1674-4926/31/5/054003.
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Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
DOI: 10.1088/1674-4926/31/5/054003
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Abstract
The influence of gate-head and gate-source-spacing on the performance of AlGaN/GaN HEMTs was studied. Suggestions are then made to improve the performance of high frequency power AlGaN/GaN HEMTs by optimizing the gate-structure. Reducing the field-plate length can effectively enhance gain, current gain cutoff frequency and maximum frequency of oscillation. By reducing the field-plate length, devices with 0.35 μm gate length have exhibited a current gain cutoff frequency of 30 GHz and a maximum frequency of oscillation of 80 GHz. The maximum frequency of oscillation can be further optimized either by increasing the gate–metal thickness, or by using a τ-shape gate (the gate where the gate-head tends to the source side). Reducing the gate–source spacing can enhance the maximum drain-current and breakdown voltage, which is beneficial in enhancing the maximum output power of AlGaN/GaN HEMTs.-
Keywords:
- AlGaN/GaN HEMT,
- high frequency,
- gate structure,
- power
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References
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Proportional views