J. Semicond. > 2010, Volume 31 > Issue 7 > 074006

SEMICONDUCTOR DEVICES

Hot carrier effects of SOI NMOS

Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng and Teng Zheqian

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DOI: 10.1088/1674-4926/31/7/074006

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Abstract: Hot carrier effect (HCE) is studied on annular NMOS and two-edged NMOS such as H-shape gate NMOS, T-shape gate NMOS and common two-edged NMOS. Based on the chemical reaction equation of HCE degradation and a geometry dependent reaction diffusion equation, a HCE degradation model for annular NMOS and two-edged NMOS is proposed. According to this model, we conclude that the time exponent of the threshold voltage degradation depends on the configuration of the gate, and annular NMOS has more serious HCE degradation than two-edged NMOS. The design, fabrication and HCE experiments of these NMOS in a 0.5-μm PD SOI process verify the correctness of the conclusion.

Key words: annular NMOStwo-edged NMOShot carrier effectsreaction diffusion model

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    Received: 18 August 2015 Revised: 29 January 2010 Online: Published: 01 July 2010

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      Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng, Teng Zheqian. Hot carrier effects of SOI NMOS[J]. Journal of Semiconductors, 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006 ****Chen J J, Chen S M, Liang B, Liu B W, Liu Z, Teng Z Q. Hot carrier effects of SOI NMOS[J]. J. Semicond., 2010, 31(7): 074006. doi:  10.1088/1674-4926/31/7/074006.
      Citation:
      Chen Jianjun, Chen Shuming, Liang Bin, Liu Biwei, Liu Zheng, Teng Zheqian. Hot carrier effects of SOI NMOS[J]. Journal of Semiconductors, 2010, 31(7): 074006. doi: 10.1088/1674-4926/31/7/074006 ****
      Chen J J, Chen S M, Liang B, Liu B W, Liu Z, Teng Z Q. Hot carrier effects of SOI NMOS[J]. J. Semicond., 2010, 31(7): 074006. doi:  10.1088/1674-4926/31/7/074006.

      Hot carrier effects of SOI NMOS

      DOI: 10.1088/1674-4926/31/7/074006
      • Received Date: 2015-08-18
      • Accepted Date: 2009-11-29
      • Revised Date: 2010-01-29
      • Published Date: 2010-07-05

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