J. Semicond. > 2010, Volume 31 > Issue 7 > 074010

SEMICONDUCTOR DEVICES

An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor

Li Binqiao, Yu Junting, Xu Jiangtao and Yu Pingping

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DOI: 10.1088/1674-4926/31/7/074010

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Abstract: An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor is presented. This new approach is based on the assumption that the photon shot noise in image signal is impacted by a potential well structure change of pixel. Experimental results show the measured pinch-off voltage is consistent with theoretical prediction. This technique provides an experimental method to assist the optimization of pixel design in both the photodiode structure and fabrication process for the 4-T CMOS image sensor.

Key words: pinch-off voltage

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    Received: 18 August 2015 Revised: 25 March 2010 Online: Published: 01 July 2010

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      Li Binqiao, Yu Junting, Xu Jiangtao, Yu Pingping. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. Journal of Semiconductors, 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010 ****Li B Q, Yu J T, Xu J T, Yu P P. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. J. Semicond., 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010.
      Citation:
      Li Binqiao, Yu Junting, Xu Jiangtao, Yu Pingping. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. Journal of Semiconductors, 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010 ****
      Li B Q, Yu J T, Xu J T, Yu P P. An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor[J]. J. Semicond., 2010, 31(7): 074010. doi: 10.1088/1674-4926/31/7/074010.

      An approach to obtain the pinch-off voltage of 4-T pixel in CMOS image sensor

      DOI: 10.1088/1674-4926/31/7/074010
      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-17
      • Revised Date: 2010-03-25
      • Published Date: 2010-07-05

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