1 |
Design optimizations of phase noise, power consumption and frequency tuning for VCO
Nan Chen, Shengxi Diao, Lu Huang, Xuefei Bai, Fujiang Lin, et al.
Journal of Semiconductors, 2013, 34(9): 095009. doi: 10.1088/1674-4926/34/9/095009
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2 |
Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region
Sudhansu Kumar Pati, Hemant Pardeshi, Godwin Raj, N Mohankumar, Chandan Kumar Sarkar, et al.
Journal of Semiconductors, 2013, 34(2): 024002. doi: 10.1088/1674-4926/34/2/024002
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3 |
A low-power and low-phase-noise LC digitally controlled oscillator featuring a novel capacitor bank
Tian Huanhuan, Li Zhiqiang, Chen Pufeng, Wu Rufei, Zhang Haiying, et al.
Journal of Semiconductors, 2010, 31(12): 125003. doi: 10.1088/1674-4926/31/12/125003
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4 |
A revised approach to Schottky parameter extraction for GaN HEMT
Wang Xinhua, Zhao Miao, Liu Xinyu, Zheng Yingkui, Wei Ke, et al.
Journal of Semiconductors, 2010, 31(7): 074005. doi: 10.1088/1674-4926/31/7/074005
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5 |
A 0.5–1.7 GHz low phase noise ring-oscillator-based PLL for mixed-signal SoCs
Jiao Yishu, Zhou Yumei, Jiang Jianhua, Wu Bin
Journal of Semiconductors, 2010, 31(9): 095002. doi: 10.1088/1674-4926/31/9/095002
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6 |
A high-performance enhancement-mode AlGaN/GaN HEMT
Feng Zhihong, Xie Shengyin, Zhou Rui, Yin Jiayun, Zhou Wei, et al.
Journal of Semiconductors, 2010, 31(8): 084001. doi: 10.1088/1674-4926/31/8/084001
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7 |
A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
Wang Dongfang, Chen Xiaojuan, Liu Xinyu
Journal of Semiconductors, 2010, 31(2): 024001. doi: 10.1088/1674-4926/31/2/024001
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8 |
A 2.4 GHz high-linearity low-phase-noise CMOS LC-VCO based on capacitance compensation
Li Zhenrong, Zhuang Yiqi, Li Bing, Jin Gang, Jin Zhao, et al.
Journal of Semiconductors, 2010, 31(7): 075005. doi: 10.1088/1674-4926/31/7/075005
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9 |
A low-phase-noise digitally controlled crystal oscillator for DVB TV tuners
Zhao Wei, Lu Lei, Tang Zhangwen
Journal of Semiconductors, 2010, 31(7): 075003. doi: 10.1088/1674-4926/31/7/075003
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10 |
High performance AlGaN/GaN HEMTs with 2.4 μm source–drain spacing
Wang Dongfang, Wei Ke, Yuan Tingting, Liu Xinyu
Journal of Semiconductors, 2010, 31(3): 034001. doi: 10.1088/1674-4926/31/3/034001
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11 |
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
Wang Dongfang, Yuan Tingting, Wei Ke, Chen Xiaojuan, Liu Xinyu, et al.
Journal of Semiconductors, 2010, 31(5): 054003. doi: 10.1088/1674-4926/31/5/054003
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12 |
Multi-bias capacitance voltage characteristic of AlGaN/GaN HEMT
Pu Yan, Wang Liang, Yuan Tingting, Ouyang Sihua, Liu Guoguo, et al.
Journal of Semiconductors, 2010, 31(10): 104002. doi: 10.1088/1674-4926/31/10/104002
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13 |
Noise performance in AlGaN/GaN HEMTs under high drain bias
Pang Lei, Pu Yan, Liu Xinyu, Wang Liang, Liu Jian, et al.
Journal of Semiconductors, 2009, 30(8): 084004. doi: 10.1088/1674-4926/30/8/084004
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14 |
Carbon-Induced Deep Traps Responsible for Current Collapse in AlGaN/GaN HEMTs
Pang Lei, Li Chengzhan, Wang Dongdong, Huang Jun, Zeng Xuan, et al.
Journal of Semiconductors, 2008, 29(6): 1066-1069.
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15 |
AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
Yao Xiaojiang, Li Bin, Chen Yanhu, Chen Xiaojuan, Wei Ke, et al.
Chinese Journal of Semiconductors , 2007, 28(4): 514-517.
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16 |
A Recessed AlGaN/GaN HEMT with High Output Power in the X Band
Feng Zhen, Zhang Zhiguo, Wang Yong, Mo Jianghui, Song Jianbo, et al.
Chinese Journal of Semiconductors , 2007, 28(11): 1773-1776.
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17 |
Two-Dimensional Static Numerical Modeling and Simulation of AlGaN/GaN HEMT
Xue Lijun, Xia Yang, Liu Ming, Wang Yan, Shao Xue, et al.
Chinese Journal of Semiconductors , 2006, 27(2): 298-303.
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18 |
A New AlGaN/GaN HEMT Semiempirical DC Model
Liu Dan, Chen Xiaojuan, Liu Guoguo, He Zhijing, Liu Xinyu, et al.
Chinese Journal of Semiconductors , 2006, 27(11): 1984-1988.
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19 |
Numerical Explanation of Slow Transients in an AlGaN/GaN HEMT
Zhang Jinfeng, Hao Yue
Chinese Journal of Semiconductors , 2006, 27(2): 276-282.
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20 |
Development of High Performance AlGaN/GaN HEMTswith Low Ohmic Contact
Liu Jian, Li Chenzhan, Wei Ke, He Zhijing, Liu Guoguo, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 262-265.
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