J. Semicond. > 2010, Volume 31 > Issue 7 > 075004

SEMICONDUCTOR INTEGRATED CIRCUITS

A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation

Zhou Zekun, Ma Yingqian, Ming Xin, Zhang Bo and Li Zhaoji

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DOI: 10.1088/1674-4926/31/7/075004

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Abstract: A high precision high-order curvature-compensated bandgap reference compatible with the standard BiCMOS process, which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges, and a piecewise curvature correction in higher temperature ranges, is presented. Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm/℃ is realized at a 3.6-V power supply, a power supply rejection ratio of 85 dB is achieved, and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45 μA. The active area of the presented bandgap reference is 260 × 240 μm2.

Key words: high-order curvature compensationexponential curvature compensationpiecewise curvature compensationBiCMOS bandgap referencetemperature coefficientPSRR

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    Received: 18 August 2015 Revised: 21 February 2010 Online: Published: 01 July 2010

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      Zhou Zekun, Ma Yingqian, Ming Xin, Zhang Bo, Li Zhaoji. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. Journal of Semiconductors, 2010, 31(7): 075004. doi: 10.1088/1674-4926/31/7/075004 ****Zhou Z K, Ma Y Q, Ming X, Zhang B, Li Z J. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. J. Semicond., 2010, 31(7): 075004. doi:  10.1088/1674-4926/31/7/075004.
      Citation:
      Zhou Zekun, Ma Yingqian, Ming Xin, Zhang Bo, Li Zhaoji. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. Journal of Semiconductors, 2010, 31(7): 075004. doi: 10.1088/1674-4926/31/7/075004 ****
      Zhou Z K, Ma Y Q, Ming X, Zhang B, Li Z J. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. J. Semicond., 2010, 31(7): 075004. doi:  10.1088/1674-4926/31/7/075004.

      A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation

      DOI: 10.1088/1674-4926/31/7/075004
      • Received Date: 2015-08-18
      • Accepted Date: 2009-12-23
      • Revised Date: 2010-02-21
      • Published Date: 2010-07-05

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