| Citation: |
Zhou Zekun, Ma Yingqian, Ming Xin, Zhang Bo, Li Zhaoji. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. Journal of Semiconductors, 2010, 31(7): 075004. doi: 10.1088/1674-4926/31/7/075004
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Zhou Z K, Ma Y Q, Ming X, Zhang B, Li Z J. A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation[J]. J. Semicond., 2010, 31(7): 075004. doi: 10.1088/1674-4926/31/7/075004.
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A 2.2-V 2.9-ppm/℃ BiCMOS bandgap voltage reference with full temperature-range curvature-compensation
DOI: 10.1088/1674-4926/31/7/075004
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Abstract
A high precision high-order curvature-compensated bandgap reference compatible with the standard BiCMOS process, which uses a simple structure to realize a novel exponential curvature compensation in lower temperature ranges, and a piecewise curvature correction in higher temperature ranges, is presented. Experiment results of the proposed bandgap reference implemented with a 0.6-μm BCD process demonstrate that a temperature coefficient of 2.9 ppm/℃ is realized at a 3.6-V power supply, a power supply rejection ratio of 85 dB is achieved, and the line regulation is better than 0.318 mV/V for 2.2-5 V supply voltage dissipating a maximum supply current of 45 μA. The active area of the presented bandgap reference is 260 × 240 μm2. -
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