J. Semicond. > 2010, Volume 31 > Issue 8 > 082003
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SEMICONDUCTOR PHYSICS

Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan and Tang Weihua

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DOI: 10.1088/1674-4926/31/8/082003

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Abstract: Two SiO2/Si interface structures, which are described by the double bonded model (DBM) and the bridge oxygen model (BOM), have been theoretically studied via first-principle calculations. First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM. Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO2/Si interface structure described by DBM leads to a larger gate leakage current.

Key words: interface

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    Received: 18 August 2015 Revised: 29 March 2010 Online: Published: 01 August 2010

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      Article Navigation >  Journal of Semiconductors  > 2010  >  31(8): 082003
      Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan, Tang Weihua. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. Journal of Semiconductors, 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003 ****Zhu H W, Liu Y S, Mao L F, Shen J Q, Zhu Z Y, Tang W H. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. J. Semicond., 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003.
      Citation:
      Zhu Huiwen, Liu Yongsong, Mao Lingfeng, Shen Jingqin, Zhu Zhiyan, Tang Weihua. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. Journal of Semiconductors, 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003 ****
      Zhu H W, Liu Y S, Mao L F, Shen J Q, Zhu Z Y, Tang W H. Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current[J]. J. Semicond., 2010, 31(8): 082003. doi: 10.1088/1674-4926/31/8/082003.
      shu

      Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current

      DOI: 10.1088/1674-4926/31/8/082003

      • Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

      • Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

      • School of Electronics & Information Engineering, Soochow University, Suzhou 215021, China

      • Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

      • Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

      • Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, China

      • Received Date: 2015-08-18
      • Accepted Date: 2010-02-18
      • Revised Date: 2010-03-29
      • Published Date: 2010-07-31

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